2N120 Search Results

D2W220CD18

Abstract: D2W220CD D2N120CD D2W220CG18 D2N120CG saia 801C D2N120CF D2N220CD D2N220CF
Contextual Info: mitièmm NO N-tra? ¡ 0 A rm s ^ [§ ] n [l^ © V r m s m A C 'J U — D 2N120CD D 2N120CF 2N120CG D 2N220CD D2N220CF D2N220CG « ( O R ^ 'C r t * ) m fè N O . (M ttP .3 0 ) : ( & ) 75g m m ± 7 E fà ut UL *f % %±m CSA ¡E/È 00 TUV i im m E tu < i V'rfjis-y—itntifc

Contextual Info: 2N1200 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)700n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1204A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.

Contextual Info: 2N1204 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.

Contextual Info: 2N1201 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)700n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N120

Abstract: igbt 2n120 125OC power ic 5v 1A 034
Contextual Info: Preliminary Data Sheet High Voltage IGBT IXGY 2N120 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 5 A IC90 TC = 90°C 2 A

2n120

Abstract: Transistor 9012 ax 9012 transistor
Contextual Info: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures m echanical d a ta W elded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

2N120

Abstract: ScansUX7
Contextual Info: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . D L-S 5 8900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures mechanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

igbt 2n120

Contextual Info: Preliminary Data Sheet High Voltage IGBT IXGY 2N120 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 5 A IC90 TC = 90°C 2 A

2N1208 - 2N1212

Contextual Info: <£s.m.i-Cond.u.ctoi ^Pr 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N1618 2N1208 - 2N1212 2N1724 2N1616/A - 2N1617/A 2N2101 POWER TRANSISTORS Sat Test Voltages Conditions PT TYPE @ NO. 25aC

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

2N2632

Contextual Info: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60

2N2102A

Abstract: 2n1506 2n1714 2N1904 2N1716 2N1209 2N1212 2N1479 2N1480 2N1481
Contextual Info: VI P II PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BR E A K D O \ A/N V OLTAGE S NPN DEVICE CASE h FE V CB V CE V EB V CE V SAI r. V O L T / 5Æ ES ( M ax.) 'c 'c (A) M in . Max. (A) 'b (A) V CE (V) V BE (V) 2N1209 TO-61 45 45 5 12 2 20 80 2 0.25

Contextual Info: 2N1205 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175’ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL « S EMI CON DU CT OR DE 1 3^105^0 □□□5GT5 fl 95D . 02092 D le = 5.0 AMPS - r • W 'CPi BVceo/ DEVICE TYPE PACKAGE 2N1208 2N1209 2N1212 2N1616 2N1617 TO -61 TO -61 TO -61 TO -61 TO -61 2N1618 2N1724 2N1724A 2N1725

2C415

Abstract: 2C425 2N2222ACSM4 2C746 2N1721 1N5617CSMD 2N2222A LCC1 2N2219AQF
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 1N914CSM 1N4001CSM 1N4001QCSM 1N4003CSM4 1N4003QCSM 1N4148CSM 1N4151CSM 1N4572ACSMD 1N5617CSMD 1N5711CSM 2C415 2C425 2C444 2C746 2N1132 2N1208 2N1209 2N1483A 2N1484A 2N1485A 2N1486A

2N120

Contextual Info: 2N120 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

HGT1S2N120CNDS

Abstract: HGTP2N120CND HGT1S2N120CNDS9A RHRD4120 TB334 2N120CN
Contextual Info: 2N120CND, 2N120CNDS Data Sheet December 2001 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The 2N120CND and 2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

2N1047

Abstract: SOLID POWER CORP 2n1768 2N104 2N176 2N1050A 2n1769 2N1047B 2N1048 2N1048B
Contextual Info: 8 3 6 5 7 0 0 S O L I D PO WE R C O R P 95C 0 0 1 1 6 SOLID POWER CORP T5 D "T"^3 Û f DE | fl3bS7DD DDDDllb 2 P O W E R T R A N S IS T O R S PT 2N1047 TO-57 40 aS hFE MAXIM UM RATINGS @ Ic 25°C BVcbo BV ceo BV ebo V V V A Watts TYPE NO. Ic A MIN MAX V CE

KELTRON

Abstract: b0949 B0539 sot6001 2SC2516M B0123 2n5978
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507

2N1212

Abstract: 2N2101 2N1208 to-53 transistor 2n1208 2N1209 2N1616 2N1616A 2N1617 2N1617A
Contextual Info: POWER TRANSISTORS Sat Test Voltages Conditions « ! » a r a i * 7 7 * hTM msm mrm l i r a y v V A A A ma FT TYPE NO. 2N1047 TO-57 , MAXIMUM RATINGS <feCm* • i-i’n o i A w & ? V •• y " V 80 6 40 80 .5 h* . mW 12 36 .5 10 7.5 6.0 .5 .250 2N1048 40 120

uPD70F3548

Abstract: uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4
Contextual Info: User Manual 32 Preliminary Document V850E2/Fx4 32-bit Microcontroller V850E2/FG4 V850E2/FJ4 V850E2/FK4 V850E2/FL4 µPD70F3548 µPD70F3549 µPD70F3550 µPD70F3551 µPD70F3552 µPD70F3553 µPD70F3554 µPD70F3555 µPD70F3556 µPD70F3557 µPD70F3558 µPD70F3559

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­