RHRD4120 Search Results

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A HR4120 INTERSIL
Contextual Info: RHRD4120, RHRD4120S Data Sheet January 2000 File Number 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A
Contextual Info: RHRD4120, RHRD4120S Data Sheet January 2002 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A
Contextual Info: RHRD4120, RHRD4120S S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes March 1997 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <60ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

hr 4120

Abstract: 4-120S 4120S
Contextual Info: RHRD4120, RHRD4120S H A R R IS S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes April 1 9 9 5 Package Features JE D E C S T Y LE TO-251 • Hyperfast with Soft R ecovery.<60ns • Operating T em p eratu

Contextual Info: RHRD4120, RHRD4120S S em iconductor March 1997 File Number 3626.3 4A, 1200V Hyperfast Diodes Features RHRD4120 and RHRD4120S TA49056 are hyperfast diodes with soft recovery characteristics (tp p < 60ns). They have half the recovery time of ultrafast diodes and are silicon

hr4120

Abstract: Hyperfast Diode 1200V RHRD4120 RHRD4120S RHRD4120S9A 1475C
Contextual Info: interrii RHRD4120, RHRD4120S J a n u a ry . Data Sheet m i File Num ber 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A
Contextual Info: RHRD4120, RHRD4120S S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <60ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

hr 4120

Abstract: HR4120 hr 4120 diode RHRD4120 RHRD4120S RHRD4120S9A
Contextual Info: RHRD4120, RHRD4120S Data Sheet File Number 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride

1n120cn

Abstract: GEM X 365 1N120C TB334 HGTD1N120CNS HGTD1N120CNS9A HGTP1N120CN TA49317
Contextual Info: HGTD1N120CNS, HGTP1N120CN Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and

G5N120CN

Abstract: TB334 HGT1S5N120CNS HGT1S5N120CNS9A HGTP5N120CN LD26 RHRD4120 G5N120
Contextual Info: HGTP5N120CN, HGT1S5N120CNS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

Contextual Info: HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

Contextual Info: HGTP1N120BND, HGT1S1N120BNDS S e m iconductor D ata S h eet F eb ru ary 1999 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

EM- 546 motor

Contextual Info: HGTD1N120BNS, HGTP1N120BN Data Sheet February 1999 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

1n120cnd

Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334 1N120CN
Contextual Info: HGTP1N120CND, HGT1S1N120CNDS Data Sheet December 2001 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

RHRG3040

Abstract: RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040
Contextual Info: 8A RHRD6120 RHRD6120S 3.2V 65ns RHRP8120 3.2V 70ns RHRP15120 3.2V 75ns RHRP15100 3.0V 70ns RHRP1590 3.0V 70ns RHRP1580 3.0V 70ns RHRP1570 3.0V 70ns RHRP1560 2.1V 40ns RHRP1550 2.1V 40ns RHRP1540 2.1V 40ns 15A RHRP30120 3.2V 75ns RHRP30100 3.0V 75ns RHRP3090

1N120CND

Contextual Info: L I* n n i C y a £ £ & HGTP1N120CND, HGT1S1N120CNDS 6.2A, 1200V, NPT Series N-Channel IGBT Wjth Anti-Parallel Hyperfast Diode ADVANCE INFORMATION November 1998 Features Description • 6.2A, 1200V, T C = 2 5 °C The HGTP1N120CND and the HGT1S1N120CNDS are NonPunch Through NPT IGBT designs. They are new members of

Contextual Info: HGTP2N120CND, HGT1S2N120CNDS Semiconductor D ata S h eet M arch 1999 13A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

Contextual Info: HGTP1N120CND, HGT1S1N120CNDS Semiconductor February 1999 Data Sheet 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

100ns

Abstract: RHRP15120 hru150 rhrp30120
Contextual Info: HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE TO-252 TO-251 TO-220AC 'F AVG 'F(A V G ) 6A 4A SA 8A 15A 30A 30A 50A 'F (A V G ) 75A 50A 75A 100 A 150A RHRD440 RHRD640 2.1V 35ns 2.1V 35ns RHRD440S 2.1V 35ns RHRD640S RHRP840 2.1V 35ns 2.1V 35ns RHRP1540

MOSFET 1200v 3a

Abstract: HGTD1N120BNS HGTD1N120BNS9A HGTP1N120BN RHRD4120 TB334 1N120BN 1N120B
Contextual Info: HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

TO-263

Abstract: TO263 POWER TRANSISTORS 600v HGT1S20N35G3VLS
Contextual Info: INSULATED GATE BIPOLAR T R A N S I S T O R S The U FS SE R IE S of IGBTs Insulated specified in surface-mounted packages variety of applications requiring high Gate Bipolar Transistors is available in ranging from TO-252AA to TO-263AB. power control. 600V and 1200V ratings and may be

1N120CND

Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334
Contextual Info: HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

2N120CN

Abstract: HGT1S2N120CNS HGT1S2N120CNS9A HGTD2N120CNS HGTP2N120CN TB334
Contextual Info: HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 13A, 1200V, NPT Series N-Channel IGBT Features The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best