RHRD6120 Search Results

HR6120

Abstract: RHRD6120 RHRD6120S RHRD6120S9A TA49058
Contextual Info: RHRD6120, RHRD6120S Data Sheet Title HR 120, HRD 20S bt A, 00V pert odes utho eyrds terrpoon, minctor, ache ergy ted, itch wer pes, wer itch - January 2000 File Number 3981.1 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with

RHRG3040

Abstract: RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040
Contextual Info: 8A RHRD6120 RHRD6120S 3.2V 65ns RHRP8120 3.2V 70ns RHRP15120 3.2V 75ns RHRP15100 3.0V 70ns RHRP1590 3.0V 70ns RHRP1580 3.0V 70ns RHRP1570 3.0V 70ns RHRP1560 2.1V 40ns RHRP1550 2.1V 40ns RHRP1540 2.1V 40ns 15A RHRP30120 3.2V 75ns RHRP30100 3.0V 75ns RHRP3090

RD6120

Contextual Info: RHRD6120, RHRD6120S fil IH A R R IS U U S E M I C O N D U C T O R 6A, 1200V Hyperfast Diodes March 1995 Features Package • Hyperfast with Soft R eco • Operating Tem p eratu

HR6120

Abstract: TA49058 RHRD6120 RHRD6120S RHRD6120S9A
Contextual Info: RHRD6120, RHRD6120S Data Sheet January 2002 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with soft recovery characteristics trr < 55ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

HR6120

Abstract: TA49058 RHRD6120 RHRD6120S
Contextual Info: RHRD6120, RHRD6120S S E M I C O N D U C T O R 6A, 1200V Hyperfast Diodes March 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

HR6120

Abstract: TA49058 RHRD6120 RHRD6120S RHRD6120S9A
Contextual Info: i n t e R H R D 6 1 2 0 , R H R D 6 1 2 0 S r r i i J a n u a ry . Data Sheet m i File Num ber 3981.1 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with soft recovery characteristics trr < 55ns . They have half the recovery time of ultrafast diodes and are silicon nitride

Hyperfast Diode 1200V

Abstract: HR6120 RHRD6120S9A TA49058 RHRD6120 RHRD6120S
Contextual Info: RHRD6120, RHRD6120S Data Sheet January 2000 File Number 3981.1 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with soft recovery characteristics trr < 55ns . They have half the recovery time of ultrafast diodes and are silicon nitride

zener 7.5 spice model

Abstract: HGT1S5N120BNS HGTP5N120BN LD26 RHRD6120 TA49308 TB334 IC-2521 5n120bn
Contextual Info: HGTP5N120BN, HGT1S5N120BNS Data Sheet December 2001 21A, 1200V, NPT Series N-Channel IGBTs Features The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and

HGTG5N120BND

Abstract: 5n120bnd 5n120 TA49058 mosfet 600v 10a to-220ab IC-2521 HGTP5N120BND RHRD6120 TA49308 TB334
Contextual Info: HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

5n120bnd

Abstract: mosfet 5N120bnd TA49306 5n120 HGT1S5N120BNDS HGTG5N120BND HGTP5N120BND RHRD6120 TA49058 TA49308
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

100ns

Abstract: RHRP15120 hru150 rhrp30120
Contextual Info: HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE TO-252 TO-251 TO-220AC 'F AVG 'F(A V G ) 6A 4A SA 8A 15A 30A 30A 50A 'F (A V G ) 75A 50A 75A 100 A 150A RHRD440 RHRD640 2.1V 35ns 2.1V 35ns RHRD440S 2.1V 35ns RHRD640S RHRP840 2.1V 35ns 2.1V 35ns RHRP1540

5n120bn

Abstract: TA49308 5n120 MOSFET 1200v 30a HGT1S5N120BNS HGTP5N120BN RHRD6120 TB334
Contextual Info: HGTP5N120BN, HGT1S5N120BNS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs Features The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and

TO-263

Abstract: TO263 POWER TRANSISTORS 600v HGT1S20N35G3VLS
Contextual Info: INSULATED GATE BIPOLAR T R A N S I S T O R S The U FS SE R IE S of IGBTs Insulated specified in surface-mounted packages variety of applications requiring high Gate Bipolar Transistors is available in ranging from TO-252AA to TO-263AB. power control. 600V and 1200V ratings and may be

5N120BND

Abstract: mosfet 5N120bnd 5n120 HGTG5N120BND 12V 200A Relay HGT1S5N120BNDS HGTP5N120BND RHRD6120 TA49058 TA49308
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

HGTP5N120BND

Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet November 2001 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

5n120bnd

Abstract: transistor de 1200v 5a TP5N12 HGTG5N120BND HGTP5N120BND
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J a n u a r y 1999 D ata S h e e t 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J an u ary 1999 D ata S h eet 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

mosfet 5N120bnd

Contextual Info: HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

SINGLE LEAD TO-218

Abstract: RHRU100120 RHRP860C Rectifier 1A 1200V RURD420 RURD420S RHRP8120 RURD460S RURD620 RURD660
Contextual Info: INTERSIL ULTRAFAST RECOVERY RECTIFIER PRODUCTS TO-252 TO-251 NOTE: TO-252 is designated by “S” suffix. TO-220AC IF AVG VRRM 4A RURD420, RURD420S, 1.0V 35ns 6A 8A 1-888-INTERSIL or 321-724-7143 400V 600V RURD460, RURD460S, 1.5V 60ns 8A RURD620, RURD620S,

MUR840

Abstract: ultrafast recovery dual rectifier RHRP8120 RHRU100120 Hyperfast Diode 1200V RURG8060 smps design 32V MUR1520 MUR820 RURD420
Contextual Info: FO-011.2 5/12/00 12:09 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market

5n120bnd

Abstract: HGT1S5N120BNDS mosfet 5N120bnd IC-2521 5n120 HGTG5N120BND 12V 200A Relay HGTP5N120BND RHRD6120 TA49058
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet December 2001 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

FEP16BT

Abstract: FEP16CTA FEP16FTD ISL9R3060G2 RHRU100120 RURU8060 FEP16ATD fep16dta FFAF30U60DN ffpf30u20s
Contextual Info: Discrete Ultrafast Recovery Rectifiers Configuration VRRM V IF (AV) (A) VF Max (V) trr Max (ns) IRM or IR Max (uA) ta@125°C Typ (ns) tb@125°C Typ (ns) EGP20A Single 50 2 0.95 50 5 - - EGP20B Single 100 2 0.95 50 5 - - EGP20C Single 150 2 0.95 50 5 - -