RHRP30120 Search Results

RHR30120

Abstract: RHR30120 fairchild make RHR30120 datasheet RHRP30120 equivalent RHRP30120 TA49041 34093
Contextual Info: RHRP30120 Data Sheet Title HRP 120 bt A, 00V pert ode) utho eyrds A, 00V pert ode, errpoon, pert ode, ache ergy ted, itch January 2000 File Number 3409.3 30A, 1200V Hyperfast Diode Features The RHRP30120 is a hyperfast diode with soft recovery characteristics trr < 65ns).It has half the recovery time of

rhr30120

Abstract: RHR30120 fairchild make RHR30120 datasheet RHRP30120 TA49041
Contextual Info: RHRP30120 Data Sheet January 2002 30A, 1200V Hyperfast Diode Features The RHRP30120 is a hyperfast diode with soft recovery characteristics trr < 65ns .It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

rhr30120

Abstract: RHR30120 datasheet RHRP30120 equivalent TA49041 RHRP30120
Contextual Info: RHRP30120 S E M I C O N D U C T O R 30A, 1200V Hyperfast Diode April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <65ns JEDEC TO-220AC o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C ANODE

RHRG3040

Abstract: RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040
Contextual Info: 8A RHRD6120 RHRD6120S 3.2V 65ns RHRP8120 3.2V 70ns RHRP15120 3.2V 75ns RHRP15100 3.0V 70ns RHRP1590 3.0V 70ns RHRP1580 3.0V 70ns RHRP1570 3.0V 70ns RHRP1560 2.1V 40ns RHRP1550 2.1V 40ns RHRP1540 2.1V 40ns 15A RHRP30120 3.2V 75ns RHRP30100 3.0V 75ns RHRP3090

rhr30120

Abstract: TA49041 RHRP30120 S1A TRN
Contextual Info: RHRP30120 HI HARRIS S E M I C O N D U C T O R 30A, 1200V Hyperfast Diode April 1995 Features Package • Hyperfast with Soft R ecovery. <65ns JEDEC TO-22QAC • Operating T em p eratu

RHR30120

Abstract: Hyperfast Diode 1200V RHRP30120 TA49041 VRRM1200V
Contextual Info: i n t e RHRP30120 r r i i J a n u a ry . w in Data Sheet File Num ber 3409.3 30A, 1200V Hyperfast Diode Features The RHRP30120 is a hyperfast diode with soft recovery characteristics trr < 65ns .It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

RHR30120

Abstract: RHRP30120 RHRP
Contextual Info: RHRP30120 March 2001 Data Sheet 30 A, 1200 V, Hyperfast Diode Features • Hyperfast Recovery trr = 85 ns @ IF = 30 A The RHRP30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of Ultrafast diodes and is silicon nitride passivated ionimplanted

Contextual Info: RHRP30120 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage1200 t(rr) Max.(s) Rev.Rec. Time75n @I(F) (A) (Test Condition)30 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage3.2 @I(FM) (A) (Test Condition)30

RHR30120

Abstract: RHR30120 fairchild make
Contextual Info: RHRP30120 November 2013 Data Sheet 30 A, 1200 V, Hyperfast Diode Features • Hyperfast Recovery trr = 85 ns @ IF = 30 A The RHRP30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted

RHR30120

Abstract: RHR30120 datasheet RHRP30120 equivalent RHRP30120 TA49041
Contextual Info: RHRP30120 Data Sheet January 2000 File Number 3409.3 30A, 1200V Hyperfast Diode Features The RHRP30120 is a hyperfast diode with soft recovery characteristics trr < 65ns .It has half the recovery time of ultrafast diodes and is of silicon nitride passivated

RHRG3040

Abstract: 100ns RHRG1550CC RHRU100120 RHRD440 RHRD440S RHRD640 RHRD640S RHRP1540 RHRP3040
Contextual Info: 15A 30A 30A 50A 75A 50A 75A 100A S E M I C O N D U C T O R ITALICS = Future Product Offerings; VF at IF AVG , TJ = 25oC; TRR at IF(AVG), dIF/dt = 100A/µsec TJ = 25oC; † TRR at IF = 1A RHRP8120 RHRP15120 RHRP30120 RHRG30120 RHRG50120 RHRG75120 RHRU50120 RHRU75120 RHRU100120

Contextual Info: HGTG30N120CN / HGTG5A30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN and HGT5A30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

HGTG27N120BN

Abstract: 27N120 27N120BN HGT5A27N120BN RHRP30120 TA49280 LD26 MJ2002 G27N120BN
Contextual Info: HGTG27N120BN / HGT5A27N120BN Data Sheet August 2002 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

G30N120CN

Abstract: HGTG30N120CN LD26 RHRP30120
Contextual Info: HGTG30N120CN Data Sheet January 2000 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: HGTG30N120CN S em iconductor March 1999 Data Sheet 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

100ns

Abstract: RHRP15120 hru150 rhrp30120
Contextual Info: HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE TO-252 TO-251 TO-220AC 'F AVG 'F(A V G ) 6A 4A SA 8A 15A 30A 30A 50A 'F (A V G ) 75A 50A 75A 100 A 150A RHRD440 RHRD640 2.1V 35ns 2.1V 35ns RHRD440S 2.1V 35ns RHRD640S RHRP840 2.1V 35ns 2.1V 35ns RHRP1540

40N60C3R

Abstract: HGTG40N60C3R LD26 RHRP30120 40N60C3
Contextual Info: HGTG40N60C3R 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices

g27n120

Abstract: G27N120BN MOSFET G27N120BN c110 spice model TA49280 HGTG27N120BN LD26 RHRP30120
Contextual Info: HGTG27N120BN Data Sheet January 2000 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

RHRP30120

Abstract: TA49280 G27N120BN HGTG27N120BN LD26
Contextual Info: HGTG27N120BN Data Sheet April 2002 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device