TA49280 Search Results

HGTG27N120BN

Abstract: 27N120 27N120BN HGT5A27N120BN RHRP30120 TA49280 LD26 MJ2002 G27N120BN
Contextual Info: HGTG27N120BN / HGT5A27N120BN Data Sheet August 2002 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

G27N120BN

Abstract: HGTG27N120BN G27N120 EM- 534 motor
Contextual Info: HGTG27N120BN 56A, 1200V, NPT Series N-Channel IGBT Features Description • 56A, 1200V, T C = 25°C The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of

g27n120

Abstract: G27N120BN MOSFET G27N120BN c110 spice model TA49280 HGTG27N120BN LD26 RHRP30120
Contextual Info: HGTG27N120BN Data Sheet January 2000 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

RHRP30120

Abstract: TA49280 G27N120BN HGTG27N120BN LD26
Contextual Info: HGTG27N120BN Data Sheet April 2002 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

Contextual Info: HGTG27N120BN Semiconductor A p ril 1999 D ata S h eet 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

MOSFET G27N120BN

Abstract: 27N120 g27n120 HGTG27N120BN RHRP30120 TA49280 G27N120BN HGT5A27N120BN LD26 27N120BN
Contextual Info: HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

Contextual Info: HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

G27N120BN

Contextual Info: HGTG27N120BN Data Sheet December 2001 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

G27N120BN

Abstract: MOSFET G27N120BN HGTG27N120BN LD26 RHRP30120 TA49280
Contextual Info: HGTG27N120BN Data Sheet January 2000 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device