TA49058 Search Results

HGTG5N120BND

Abstract: 5n120bnd 5n120 TA49058 mosfet 600v 10a to-220ab IC-2521 HGTP5N120BND RHRD6120 TA49308 TB334
Contextual Info: HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

HR6120

Abstract: RHRD6120 RHRD6120S RHRD6120S9A TA49058
Contextual Info: RHRD6120, RHRD6120S Data Sheet Title HR 120, HRD 20S bt A, 00V pert odes utho eyrds terrpoon, minctor, ache ergy ted, itch wer pes, wer itch - January 2000 File Number 3981.1 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC July 1996 File Number 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

5n120bnd

Abstract: mosfet 5N120bnd TA49306 5n120 HGT1S5N120BNDS HGTG5N120BND HGTP5N120BND RHRD6120 TA49058 TA49308
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

5N120CND

Abstract: 5n120 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334 transistors equivalent
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC July 1996 Title HRP 20C bt A, 00V pert al ode utho rpoon, pert al ode, ache ergy ted, 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns). It has half the recovery time of ultrafast diodes and is silicon nitride

Contextual Info: a RHRP6120CC HARRIS S E M I C O N D U C T O R juiy 1996 6A, 1200V Hyperfast Dual Diode Features Description • Hyperfast with Soft R ecovery. <55ns • Operating T em p eratu

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC S E M I C O N D U C T O R 6A, 1200V Hyperfast Dual Diode January 1996 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC TO-220AB o ANODE 2 CATHODE ANODE 1 • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

RD6120

Contextual Info: RHRD6120, RHRD6120S fil IH A R R IS U U S E M I C O N D U C T O R 6A, 1200V Hyperfast Diodes March 1995 Features Package • Hyperfast with Soft R eco • Operating Tem p eratu

HR6120

Abstract: TA49058 RHRD6120 RHRD6120S RHRD6120S9A
Contextual Info: RHRD6120, RHRD6120S Data Sheet January 2002 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with soft recovery characteristics trr < 55ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

5N120BND

Abstract: mosfet 5N120bnd 5n120 HGTG5N120BND 12V 200A Relay HGT1S5N120BNDS HGTP5N120BND RHRD6120 TA49058 TA49308
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC January 2002 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

HGTP5N120BND

Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet November 2001 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

5n120bnd

Abstract: transistor de 1200v 5a TP5N12 HGTG5N120BND HGTP5N120BND
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J a n u a r y 1999 D ata S h e e t 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J an u ary 1999 D ata S h eet 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

diode 1334

Abstract: RHR6120C RHRP6120CC TA49058
Contextual Info: RHRP6120CC S E M I C O N D U C T O R 6A, 1200V Hyperfast Dual Diode July 1996 Features Description • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <55ns The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time

mosfet 5N120bnd

Contextual Info: HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

5N120CND

Abstract: 5n120 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

5n120bnd

Abstract: HGT1S5N120BNDS mosfet 5N120bnd IC-2521 5n120 HGTG5N120BND 12V 200A Relay HGTP5N120BND RHRD6120 TA49058
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet December 2001 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

HR6120

Abstract: TA49058 RHRD6120 RHRD6120S
Contextual Info: RHRD6120, RHRD6120S S E M I C O N D U C T O R 6A, 1200V Hyperfast Diodes March 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

HGT1S5N120CNDS

Abstract: HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

5n120

Abstract: 5N120CND 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334 5N120CN
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS S e m iconductor Data Sheet March 1999 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high