RURD660 Search Results

RUR660

Abstract: RUR640 RURD640 RURD640S RURD650 RURD650S RURD660 RURD660S RUR650
Contextual Info: S E M I C O N D U C T O R RURD640, RURD650, RURD660, RURD640S, RURD650S, RURD660S 6A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC STYLE TO-251 • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175oC

RUR660

Abstract: RURD660S RURD660 RURD660S9A TO-251 fairchild
Contextual Info: RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted

Contextual Info: HAFRFRIS S E M I C O N D U C T O R RURD640, RURD650, RURD660 RURD640S, RURD650S, RURD660S 6A, 400V - 600V Ultrafast Diodes January 1995 Package Features JEDEC STYLE TO-251 • Ultrafast with Soft Recovery. <55ns

rur660

Contextual Info: RURD660S9A_F085 Ultrafast Power Rectifier, 6A 600V Features 6A, 600V Ultrafast Rectifier • High Speed Switching trr=63ns(Typ. @ IF=6A ) The RURD660S9A_F085 is an ultrafast diode with soft recovery characteristics (trr< 83ns). It has a low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is

RUR660

Abstract: RURD660S TO-251 fairchild
Contextual Info: RURD660, RURD660S March 2001 Data Sheet 6 A, 600 V, Ultrafast Diode Features The RURD660, RURD660S is an Ultrafast Dual Diode with low forward voltage drop. This device is intended for use as freewheeling and clamping Diodes in a variety of switching power supplies and other power switching applications. It is

rur660

Abstract: 600V, 9A, Diodes RUR640 TA49038
Contextual Info: HLAJRFRIS S E M . c o n d u c t o r RURD640, RURD650, RURD660, RURD640S, RURD650S, RURD660S 6A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . .<55ns • Operating Tem p eratu re. . . . +175°C • Reverse Voltage Up To . . . .

RUR660

Abstract: RURD660S RURD660 RURD660S9A
Contextual Info: RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted

Contextual Info: RURD660S9A_F085 Ultrafast Power Rectifier, 6A 600V Features 6A, 600V Ultrafast Rectifier • High Speed Switching trr=63ns(Typ. @ IF=6A ) The RURD660S9A_F085 is an ultrafast diode with soft recovery characteristics (trr< 83ns). It has a low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is

Contextual Info: RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted

RURD660

Abstract: RUR660
Contextual Info: RURD660, RURD660S November 2013 Data Sheet 6 A, 600 V, Ultrafast Diode Features The RURD660, RURD660S is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It

RUR660

Abstract: RURD660 RURD660S RURD660S9A RUR66
Contextual Info: RURD660, RURD660S Data Sheet January 2000 File Number 3750.2 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted

RUR660

Abstract: RURD660S RURD660 RURD660S9A
Contextual Info: RURD660, RURD660S Data Sheet Title UR 60, RD 0S bt A, 0V rafa odes utho eyrds A, 0V rafa January 2000 wer pes, wer itch 3750.2 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns). They have low forward

RUR660

Abstract: RURD660 RURD660S RURD660S9A
Contextual Info: RURD660, RURD660S Data Sheet January 2000 File Number 3750.2 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted

RURU8060

Abstract: RURD620 MUR1520 equivalent RHRU100120 MUR1520 MUR1540 MUR1560 MUR8100E MUR820 MUR840
Contextual Info: Rectifier Selection Tree TM File Number RECTIFIER PRODUCTS ULTRAFAST RECOVERY MUR1520 MUR1540 MUR1560 MUR8100E MUR820 MUR840 MUR860 RURD4120 RURD4120S RURD420 RURD420S RURD460 RURD460S RURD6120 RURD6120S RURD620 RURD620S RURD660 RURD660S RURD840 RURD840S RURD860

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

RURU10060

Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
Contextual Info: 150A RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 1200V S E M I C O N D U C TO R NOTE: VF at IF AVG , TJ = 25oC; trr at IF(AVG), dIF/dt = 100A/µs or 200A/µs, TJ = 25oC; † trr at IF = 1A.

URG 30100

Abstract: rur 450 UR810 IC p815 UR1520 P3020 ruru100 URP1560 RD6120 UR840
Contextual Info: HARRIS ULTRA-FAST RECOVERY RECTIFIER PRODUCT LINE & V R U R D 410 R U R D 610 R U R D 410S R URD610S 6 0 n s 1.5V RURD460 1.5 V 60ns 1 5V 3 5 n s 1.0 V 6 0 n s 1.5 V M ÜR815 R U R P815 M UR820 RURP820 3 5 n s 1.0V M UR1520 R U R P1520 35ns+ 1 .0 5 V 3 5 n s

igbt 1000v 80a

Abstract: 30A, 600v DIODE
Contextual Info: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

RURG3060C

Contextual Info: RURG3040CC, RURG3060CC March 2001 Data Sheet 30 A, 400 V - 600 V, Ultrafast Dual Diode Features • Ultrafast Recovery trr = 60 ns @ IF= 30 A • Max Forward Voltage, VF = 1.5 V (@ TC = 25°C) • 400 V, 600 V Reverse Voltage and High Reliability The RURG3060CC is an Ultrafast Dual Diode with low

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

TO-263

Abstract: TO263 POWER TRANSISTORS 600v HGT1S20N35G3VLS
Contextual Info: INSULATED GATE BIPOLAR T R A N S I S T O R S The U FS SE R IE S of IGBTs Insulated specified in surface-mounted packages variety of applications requiring high Gate Bipolar Transistors is available in ranging from TO-252AA to TO-263AB. power control. 600V and 1200V ratings and may be

3phase MOSFET INVERTER

Abstract: 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw
Contextual Info: Motor Drive Solutions Integrated modules SPM • Discrete components • Online tools n Pmech = M • � = M • 2 • � • _ = √3 • U • I • cos (�) • � 60s _ min –1 Optimize your motor designs: less energy, cost and time.

smd transistor w1a

Abstract: SMD W1A smd transistor w1a 68 DATASHEET etd29 n87 smd transistor w1a 95 DATASHEET 5100 Power Supply Celestica transformer ETD29/16/10 datasheet FQPF6N70 fan7527 FAN7527BM
Contextual Info: www.fairchildsemi.com Prototype Report European Input LED Ballast using FAN7527BM, FAN4274IMU8 and FQPF6N70 QFET • AC Input Voltage: 185VRMS – 265VRMS • Total Output Power: 33.6W • One DC Output: 700mAconstant current @ 48Vmax 2008 Fairchild Semiconductor