RURP8120 Search Results

RURU10060

Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
Contextual Info: 150A RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 1200V S E M I C O N D U C TO R NOTE: VF at IF AVG , TJ = 25oC; trr at IF(AVG), dIF/dt = 100A/µs or 200A/µs, TJ = 25oC; † trr at IF = 1A.

Contextual Info: RURP8120 Semiconductor 8A, 1200V U ltrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <100ns JEDEC TO-220AC • Operating Temperature. +175°C • Reverse

RURP8120CC

Contextual Info: RURP8120CC Data Sheet January 2000 File Number 4792 8A, 1200V Ultrafast Dual Diode Features The RURP8120CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.

rurp8120

Contextual Info: RURP8120 Data Sheet January 2000 File Number 3661.3 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

Contextual Info: RURP8120 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current8 V(RRM)(V) Rep.Pk.Rev. Voltage1200 t(rr) Max.(s) Rev.Rec. Time110n @I(F) (A) (Test Condition)8 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)8

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Abstract: RURP8120
Contextual Info: RURP8120 S E M I C O N D U C T O R 8A, 1200V Ultrafast Diode April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <100ns JEDEC TO-220AC o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C ANODE

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Abstract: RURP8120
Contextual Info: RURP8120 Data Sheet January 2000 File Number 3661.3 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

Contextual Info: RURP8120 3 3 HARRIS S E M I C O N D U C T O R 8A, 1200V Ultrafast Diode April 1995 Features Package JEDEC TO-220AC • Ultrafast with Soft R ecovery. <100ns • Operating Tem p eratu

RURP8120

Contextual Info: RURP8120 Data Sheet January 2002 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

igbt 1000v 80a

Abstract: 30A, 600v DIODE
Contextual Info: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,

MUR1520 equivalent

Abstract: MUR850 BYW51150 MUR1550 MUR880 MUR1510 MUR810 RURD410 RURD610 RURD610S
Contextual Info: 75A/80A 100A 150A MUR1550 RURP3050 RURG3050 RURG5050 RURG8050 RURU5050 RURU8050 RURU10050 RURU15050 MUR850 RURP1550 RURP850 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V 100ns 1.6V 100ns 60ns 1.5V 60ns† 1.5V MUR8100E RURP15100 RURP30100 RURG30100 RURG50100 RURG80100 RURU50100 RURU80100 RURU100100 RURU150100

RURU8060

Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
Contextual Info: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers

RURP1S60

Abstract: RURP880 RURP3080 ULTRAFAST 600V RURG8040 MUR810 MUR1550
Contextual Info: 5-3 ULTRAFAST SINGLE DIODES Selection Guide Continued HARRIS ULTRAFAST RECOVERY RECTIFIER PRODUCT LINE 2 LEAD TO-247 TO-220AC ' f <AVG) 15A SINGLE LEAD TO-21B •f <AVG> 30A 30A ^F(AVQ) 75A/B0A 50A 50A 75A/80A Vrrm BA 100A 150A 100V MUR810 RURP810 MUR1510 RURP3010 RURG3010

SINGLE LEAD TO-218

Abstract: RHRU100120 RHRP860C Rectifier 1A 1200V RURD420 RURD420S RHRP8120 RURD460S RURD620 RURD660
Contextual Info: INTERSIL ULTRAFAST RECOVERY RECTIFIER PRODUCTS TO-252 TO-251 NOTE: TO-252 is designated by “S” suffix. TO-220AC IF AVG VRRM 4A RURD420, RURD420S, 1.0V 35ns 6A 8A 1-888-INTERSIL or 321-724-7143 400V 600V RURD460, RURD460S, 1.5V 60ns 8A RURD620, RURD620S,

MUR840

Abstract: ultrafast recovery dual rectifier RHRP8120 RHRU100120 Hyperfast Diode 1200V RURG8060 smps design 32V MUR1520 MUR820 RURD420
Contextual Info: FO-011.2 5/12/00 12:09 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market

FEP16BT

Abstract: FEP16CTA FEP16FTD ISL9R3060G2 RHRU100120 RURU8060 FEP16ATD fep16dta FFAF30U60DN ffpf30u20s
Contextual Info: Discrete Ultrafast Recovery Rectifiers Configuration VRRM V IF (AV) (A) VF Max (V) trr Max (ns) IRM or IR Max (uA) ta@125°C Typ (ns) tb@125°C Typ (ns) EGP20A Single 50 2 0.95 50 5 - - EGP20B Single 100 2 0.95 50 5 - - EGP20C Single 150 2 0.95 50 5 - -

RURU8060

Abstract: RURD620 MUR1520 equivalent RHRU100120 MUR1520 MUR1540 MUR1560 MUR8100E MUR820 MUR840
Contextual Info: Rectifier Selection Tree TM File Number RECTIFIER PRODUCTS ULTRAFAST RECOVERY MUR1520 MUR1540 MUR1560 MUR8100E MUR820 MUR840 MUR860 RURD4120 RURD4120S RURD420 RURD420S RURD460 RURD460S RURD6120 RURD6120S RURD620 RURD620S RURD660 RURD660S RURD840 RURD840S RURD860

BYX49-600

Abstract: BYW19-1000 BY229-1000 motorola diode cross reference BYX49 1200 BYX49-1200 BYV72E-200 BYT29 BYT29-300 BY229/1000
Contextual Info: FO-012.1 5/12/00 12:05 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market

MOSFET 1200v 30a

Abstract: Rad hard for Harris 32v smps RHRU100120 RHRG3060c harris mur1520 MUR820 RURD420 RURP820C
Contextual Info: 41892.6 - FO-011 SELECTION 11/19/98 10:57 AM Page 1 Harris Semiconductor-An Industry Leader Harris Semiconductor comprises one sector of Harris Product Line Selection Corporation, an international communications and electronics For More Information: Harris On-Line Services:

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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