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    onsemi HGTG30N60A4D

    - Rail/Tube (Alt: HGTG30N60A4D)
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    Avnet Americas HGTG30N60A4D Tube 90
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    • 1000 $8.32
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    Flip Electronics HGTG30N60A4D 22,627
    • 1 $6.82
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    onsemi HGTG30N60A4

    IGBT-Single 600V 75A 463W TO247-3 Tube
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    Rochester Electronics HGTG30N60A4 72 1
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    Fairchild Semiconductor Corporation HGT1N30N60A4D

    IGBT MOD 600V 96A 255W SOT-227-4 Tube
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    Rochester Electronics HGT1N30N60A4D 902 1
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    Fairchild Semiconductor Corporation HGTG30N60A4D

    IGBT-Single 600V 70A 463W TO247-3 Tube
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    ComSIT USA HGTG30N60A4D 210
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    Win Source Electronics HGTG30N60A4D 4,944
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    • 100 $13.85
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    30N60A4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    30N60A4

    Abstract: 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 hgtg30n60a4d TA49373 30N60A HGTP30N60A4D TA49345
    Contextual Info: 30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		hgtg30n60a4d150octa49343ta49373+830n60a430n60a4dhgtg*n60a4d30n60hgtp30n60a430n60ahgtp30n60a4dta49345 PDF

    30n60a4d

    Abstract: 30N60A4 TA49373 hgtp30n60a4 TA49343 HGTG30N60A4D LD26 TA49345 HGTG*N60A4D
    Contextual Info: 30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		hgtg30n60a4d150octa49343ta49373+630n60a4d30n60a4hgtp30n60a4ld26ta49345hgtg*n60a4d PDF

    30N60A4D

    Contextual Info: 30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		hgtg30n60a4d150octa49343ta49373+130n60a4d PDF

    30N60A4D

    Abstract: TA49373 30N60A4 HGTG30N60A4D TA49345 ICE 280 TA49343 30N60A
    Contextual Info: 30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		hgtg30n60a4d150octa49343ta49373+530n60a4d30n60a4ta49345ice 28030n60a PDF

    G30N60A4

    Abstract: G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 HGTG30N60A4 TA49373 transistor bipolar collector current 1mA
    Contextual Info: i n t e 30N60A4 r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT File N u m b er i 4829 Features The 30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    OCR Scan     		hgtg30n60a4ta49343o-247g30n60a4+7g30n60atil-220igbt g30n60a4g30n60a4 transistorg30n60ta49373transistor bipolar collector current 1ma PDF

    30N60A4D

    Abstract: TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d HGTG30N60A4D TIL-220 HGTG*N60A4D la 4830 ic
    Contextual Info: i n t e 30N60A4D r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		hgtg30n60a4dta49343ta4937330n60a4d+630n60a4ta49345hgtp30n60a4dtil-220hgtg*n60a4dla 4830 ic PDF

    30n60a4d

    Abstract: 30n60a4 HGTG30N60A4D TA49373 HGTG*N60A4D LD26 TA49343 TA49345
    Contextual Info: 30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		hgtg30n60a4d150octa49343ta49373+530n60a4d30n60a4hgtg*n60a4dld26ta49345 PDF

    30N60A4D

    Abstract: mj 1504 transistor equivalent 30N60A4 HGT1N30N60A4D 30n60* 227 transistor mj 1504 transistors mj 1504 TA49373
    Contextual Info: 30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The 30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the


    Original     		hgt1n30n60a4d150octa49345100khz+730n60a4dmj 1504 transistor equivalent30n60a430n60* 227transistor mj 1504transistors mj 1504ta49373 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note PDF

    30n60a4d

    Abstract: mj 1504 transistor equivalent TA49345 HGT1N30N60A4D hyperfast diode reference guide TA49373 30n60* 227 30N60A4 LD26
    Contextual Info: 30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The 30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the


    Original     		hgt1n30n60a4d150oc100khz30n60a4d+7mj 1504 transistor equivalentta49345hyperfast diode reference guideta4937330n60* 22730n60a4ld26 PDF

    30n60a4d

    Abstract: 30N60A4 TA49345 30N60A 30n60* 227 HGT1N30N60A4D LD26 TA49373 SOT227B
    Contextual Info: 30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input


    Original     		hgt1n30n60a4d150oc100khz30n60a4d+730n60a4ta4934530n60a30n60* 227ld26ta49373sot227b PDF