30N60A Search Results

Contextual Info: □ IXYS Low V CE sat „ , „ IGBT High Speed IGBT IXSH/IXSM IXSH/IXSM 30N60 30N60A v CES ^C25 V C E (sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

30n60

Abstract: N60A mos 30N60 igbt 30N60 30N60A GE1001 IXYS 30N60 30n60 igbt
Contextual Info: H Y Y JL ^ sIk»!? flHVwÎ A- Low VC„, ,. IGBT E s a t High Speed IGBT ix s h /ix s m IXSH/IXSM 30N60 30N60A v CES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test C onditions Maximum Ratings V CES Td = 25°C to 150°C

Contextual Info: DIXYS IGBT with Diode L0W IXSH 30N60AU1 VCES I V c E s„. C25 v CE(sat) High Speed Combi Packs 600 V 50 A 3.0 V ?c S h o r t C ir c u it S O A C a p a b ilit y G OE Symbol Test Conditions VCES Tj =25°C to150°C 600 V VcOR Tj = 25° C to 150° C; RGE= 1 Mi2

30n60

Abstract: igbt 30N60 30N60A IXYS 30N60 mos 30N60 30n60 equivalent ixsm equivalent for 30n60 30N60U1 030N60
Contextual Info: Low VCE sat IGBT High Speed IGBT IXSH/IXSM IXSH/IXSM 30N60 30N60A VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

30N60

Abstract: N60A 30N60A igbt 30N60 IXGH30N60U1 30N60U1 IXGH30N60AU1 IXGM30N60A
Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90

30n60

Abstract: IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A n60u1
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH30 N60U1 IXGH30 N60AU1 VCES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£2

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

30N60A4

Abstract: 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 hgtg30n60a4d TA49373 30N60A HGTP30N60A4D TA49345
Contextual Info: 30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

30n60a4d

Abstract: 30N60A4 TA49373 hgtp30n60a4 TA49343 HGTG30N60A4D LD26 TA49345 HGTG*N60A4D
Contextual Info: 30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

30N60A

Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

B1116

Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40

30N60U1

Abstract: 30n60
Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

30N60A4D

Contextual Info: 30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

30N60A4D

Abstract: TA49373 30N60A4 HGTG30N60A4D TA49345 ICE 280 TA49343 30N60A
Contextual Info: 30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

ixgh 1500

Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•

30n60

Abstract: 1XSH30N60A
Contextual Info: lOIXYS lowvcemigbt IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A High Speed IGBT Short Circuit SOA Capability o- Symbol Test Conditions V Maximum Ratings Tj = 25°C to 150°C 600 V vC0B Tj = 25°C to 150°C; RaE = 1 Mfi 600 V VGES Continuous ±20 V v Transient ±30 V

30n60

Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Contextual Info: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100

Contextual Info: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62

IXGH30N60U1

Abstract: IXGH30N60AU1 30N60U1 n60u1 30N60AU1
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 30 N60U1 IXGH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

30n60u

Abstract: 30N60A ixgh30n60a IXGM30N60
Contextual Info: L o w V cE s a t IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A High speed IGBT Symbol Test Conditions V y ces Tj = 25°C to 150°C 600 V v CGR ^ 600 V VGES Continuous ±20 V v GEM T ransient ±30 V *C25 Tc = 25°C 50 A ^C90 T0 = 90°C 30 A ^c m Tc = 25°C, 1 ms

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

30N60A4D

Abstract: TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d HGTG30N60A4D TIL-220 HGTG*N60A4D la 4830 ic
Contextual Info: i n t e 30N60A4D r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

30n60

Abstract: 30N60A igbt 30N60 30 N60A N60A 30N60U1 IXGH30N60AU1 IXGH30N60A IXGH30N60U1
Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90