80N60 Search Results

80N60 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TK080N60Z1		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 600 V, 30 A, 0.08 Ω@10 V, TO-247	Datasheet

80N60 Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
80N60B		IXYS		Original	PDF	43.71KB	2

80N60 Price and Stock

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Vishay Intertechnologies SIHB080N60E-GE3 N-CHANNEL 600V - Rail/Tube (Alt: SIHB080N60E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHB080N60E-GE3	Tube	2,000	45 Weeks	1	1 $2.28 10 $2.20 100 $2.17 1000 $2.17 10000 $2.17	Buy Now
Mouser Electronics	SIHB080N60E-GE3		4,218			1 $6.62 10 $3.51 100 $3.21 1000 $2.83 10000 $2.83	Buy Now
Newark	SIHB080N60E-GE3	Bulk	1,896		1	1 $6.62 10 $3.51 100 $3.21 1000 $2.83 10000 $2.83	Buy Now
Vishay Intertechnologies RWR80N60R4FRBSL - Bulk (Alt: RWR80N60R4FRBSL)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RWR80N60R4FRBSL	Bulk		18 Weeks	100	1 - 10 - 100 $32.03 1000 $31.55 10000 $31.23	Buy Now
Vishay Intertechnologies RE80N60R4J01 - Bulk (Alt: RE80N60R4J01)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RE80N60R4J01	Bulk		9 Weeks	1	1 $2597.49 10 $592.70 100 $192.90 1000 $190.76 10000 $190.76	Buy Now
Vishay Intertechnologies RWR80N6040BRS73 Through Hole Resistor, 604 ohm, RWR Series, 2 W, ? 0.1%, Axial Leaded, Wirewound, ? 20ppm/?C - Tape and Reel (Alt: RWR80N6040BRS73)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RWR80N6040BRS73	Tape & Reel		18 Weeks	500	1 - 10 - 100 - 1000 $75.04 10000 $73.90	Buy Now
onsemi FCPF380N60E-F154 Power MOSFET, N-Channel, SUPERFET? II, Easy Drive, 600 V, 10.2 A, 380 mO, TO-220F Ultra narrow lead - Rail/Tube (Alt: FCPF380N60E-F154)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FCPF380N60E-F154	Tube		67 Weeks	1,000	1 - 10 - 100 - 1000 $1.44 10000 $1.40	Buy Now
Rochester Electronics	FCPF380N60E-F154		55,724		1	1 - 10 - 100 $1.43 1000 $1.28 10000 $1.21	Buy Now
Richardson RFPD	FCPF380N60E-F154				1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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80N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
diode lt 429 Abstract: 7V03 lts 542 Contextual Info: nixYS IXSN 80N60AU1 IGBT with Diode VC ES IC25 vY CE sat Combi Pack = 600 V = 160 A = 3V Short Circuit SOA Capability Preliminary data Maximum Ratings Symbol T est Conditions v CES ^ = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RGE = 1 M ii 600 A	OCR Scan	80n60au1 ot-227 e153432 diode lt 429 +27v03 lts 542	PDF
80n60 Abstract: 80N60B ixsk 80n60b Contextual Info: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.2 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM	Original	80n60b 247tm plus247tm 80n60 +1ixsk 80n60b	PDF
dc servo igbt Contextual Info: n i x Y S IGBT with Diode IXSN 80N60AU1 VCES I C25 vv CE sat 600 V 160 A 3V Short Circuit SOA Capability Preliminary data Symbol Maximum Ratings Test Conditions v CES T j = 25° C to 150° C 600 V vt c g r T j = 25° C to 150° C; RG6 = 1 M£2 600 A V G ES	OCR Scan	80n60au1 ot-227 e153432 dc servo igbt	PDF
80n60 Abstract: 80N60B Contextual Info: High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 160 A = 2.5 V VCE sat Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30	Original	80n60b 247tm 728b1 80n60	PDF
Contextual Info: : IXYS Prelim inary Data IXSN 80N60A High Current IGBT V ces = ^C25 = 600 V 160 A 3 V ^ C E s a t = Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES Tj = 25 °C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE= 1 600 A v GES Continuous	OCR Scan	80n60a	PDF
Contextual Info: Advanced Technical Information High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 180 A = 2.5 V VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600	Original	80n60b	PDF
Contextual Info: High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 160 A = 2.5 V VCE sat Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30	Original	80n60b 247tm 728b1	PDF
80n60 Abstract: O M 335 80N60B PF650 Contextual Info: Advance Technical Information IGBT with Diode IXSN 80N60BD1 Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 160 A = 2.5 V C G E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 A	Original	80n60bd1 ot-227 728b1 80n60 +3o m 335 80n60b pf650	PDF
80N60A Contextual Info: IXGK 80N60A vCES HiPerFAST IGBT ^C25 v* CE sat t,; 600 V 80 A 2.7 V 275 ns Preliminary data Symbol v ces V Co „ Maximum Ratings Test Conditions T, = 25°C to 150°C 600 V Tj = 25°C to 150°C; RQE = 1 MS2 600 V Continuous ±20 V v*G E M T ransient ±30	OCR Scan	80n60a o-264	PDF
80n60 Abstract: 80N60BD1 2X6-10 IXSN80N60BD1 2X61-06A Contextual Info: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	80n60bd1 2x61-06a 065b1 728b1 +4123b1 80n60 2x6-10 ixsn80n60bd1	PDF
80n60 Abstract: Siemens DIODE E 1240 80N60B 60-06A 6006A Contextual Info: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	80n60bd1 0-06a 728b1 123b1 +6065b1 80n60 siemens diode e 1240 80n60b 60-06a 6006a	PDF
Contextual Info: nixYS IGBT with Diode IXSN 80N60AU1 V CES = 600 V I = 160 A = 3 V C25 v CE sat Combi Pack Short Circuit SOA Capability Preliminary data Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGH Tj = 25°C to 150°C; RGE = 1 M n 600 A V GES Continuous	OCR Scan	80n60au1 ot-227 e153432 4bflb22b	PDF
Contextual Info: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient	Original	80n60au1 ot-227 e153432	PDF
80N60AU1 Abstract: IXYS IGBT Contextual Info: IXYS IGBT with Diode IXSN 80N60AU1 v CES ^C25 v CE sat = 600 V = 160 A = 3V oC Short Circuit SO A Capability G P relim inary data 04E Symbol Test Conditions V CES Tj - 25°C to 150°C 600 V v*C G R v GES v GEM Tj = 25CC to 150°C; RGE = 1 M ii 600 A Maximum Ratings	OCR Scan	80n60au1 ot-227 e153432 ixys igbt	PDF

Siemens DIODE E 1240 Contextual Info: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	80n60bd1 0-06a 728b1 123b1 +2065b1 siemens diode e 1240	PDF
IXGN80n60 Abstract: IF110 high current igbt SOT227B IXGN80N60A2 123B16 Contextual Info: Advanced Technical Data IXGN 80N60A2 IXGN 80N60A2D1 IGBT Optimized for Switching up to 5 kHz E Symbol Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	80n60a2 80n60a2d1 ic110 if110 +11ot-227b e153432 ixgn80n60a2d1 065b1 728b1 123b1 ixgn80n60 high current igbt sot227b ixgn80n60a2 123b16	PDF
Contextual Info: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.3 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM	Original	80n60b 247tm plus247tm	PDF
80n60 Abstract: IXSN80N60AU1 Contextual Info: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30	Original	80n60au1 ot-227 e153432 80n60 +1ixsn80n60au1	PDF
Contextual Info: IXSN 80N60BD1 Symbol Test Conditions g fs IC = 60 A; VCE = 10 V, Note1 Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. 40 52 S 6600 pF 660 pF C res 196 pF Qg 240 nC 85 nC 90 nC Inductive load, TJ = 25°°C 60 ns IC = IC90, VGE = 15 V, L = 100 µH,	Original	80n60bd1 ot-227 728b1	PDF
Contextual Info: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E Symbol Test Conditions V CES TJ = 25°C to 150°C E Maximum Ratings 600 miniBLOC, SOT-227 B E153432 E V G V CGR	Original	80n60bd1 ot-227 e153432 2x61-06a +3065b1 728b1 123b1	PDF
1xys Abstract: E153432 80N60A 80n60 Contextual Info: High Current IGBT 600 V 160 A 3V IXSN 80N60A YCES IC25 VCE sat Short Circuit SO A Capability Preliminary Data Symbol Test Conditions v CES v CGR Tj = 25°C to 150°C 600 V 1, = 25°C to 150°C; RGE = 1 M n 600 A Maximum Ratings v GES v GEM Continuous ±20	OCR Scan	80n60a ot-227b 80n60au1 1xys +2e153432 80n60	PDF
80n60 Abstract: 80N60B Contextual Info: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.2 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM	Original	80n60b 247tm o-264 plus247tm +180n60	PDF
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	o-220 o-263 o-247 o-2680xst +1316n60 24n60 30n60 40n60 25n100 b1116 b1104 n60a b1118 10n120 b1102 b1126 35n120u1	PDF
7N60B Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh Contextual Info: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28	OCR Scan	30n30 28n30 4qn30 31n60 +1238n60 41n60 60n60 200n60 25n100a 7n60b 65a3 40n60a ixga 12n60c ixgh 1500 ixg igbt ixgh	PDF

80N60 Search Results

80N60 Result Highlights (1)

80N60 Datasheets (1)

80N60 Price and Stock

Vishay Intertechnologies SIHB080N60E-GE3

Vishay Intertechnologies RWR80N60R4FRBSL

Vishay Intertechnologies RE80N60R4J01

Vishay Intertechnologies RWR80N6040BRS73

onsemi FCPF380N60E-F154

80N60 Datasheets Context Search

diode lt 429

80n60

dc servo igbt

80n60

80n60

80N60A

80n60

80n60

80N60AU1

Siemens DIODE E 1240

IXGN80n60

80n60

1xys

80n60

B1116

7N60B