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Vishay Intertechnologies IRFB9N60APBF Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IRFB9N60APBF		696		1	1 $3.24 10 $2.14 100 $1.58 1000 $1.22 10000 $1.20	Buy Now
Avnet Americas ()	IRFB9N60APBF	Bulk		33 Weeks	1,000	1 - 10 - 100 - 1000 $1.24 10000 $1.18	Buy Now
	IRFB9N60APBF	Bulk		33 Weeks	1,000	1 - 10 - 100 - 1000 $1.24 10000 $1.18	Buy Now
Newark ()	IRFB9N60APBF	Bulk	2,635		1	1 $4.35 10 $2.43 100 $2.23 1000 $1.84 10000 $1.77	Buy Now
	IRFB9N60APBF	Bulk	1,000		1	1 $3.75 10 $2.62 100 $1.99 1000 $1.68 10000 $1.61	Buy Now
RS	IRFB9N60APBF	Bulk			1,000	1 - 10 - 100 - 1000 $3.54 10000 $3.26	Get Quote
TTI	IRFB9N60APBF	Tube			1,000	1 - 10 - 100 - 1000 $1.47 10000 $1.47	Buy Now

ComSIT USA	IRFB9N60APBF		6,786			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	IRFB9N60APBF		8,700	49 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Wuhan P&S	IRFB9N60APBF		2,000		1	1 $10.69 10 $10.69 100 $3.57 1000 $3.21 10000 $3.21	Buy Now
Vishay Intertechnologies IRFR1N60APBF Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IRFR1N60APBF		223		1	1 $0.91 10 $0.91 100 $0.60 1000 $0.51 10000 $0.50	Buy Now
Avnet Americas ()	IRFR1N60APBF	Bulk	32	33 Weeks	1	1 $0.42 10 $0.42 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
	IRFR1N60APBF	Bulk		33 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.62	Buy Now
TTI	IRFR1N60APBF	Tube	1,275		75	1 - 10 - 100 $1.00 1000 $1.00 10000 $1.00	Buy Now
Bristol Electronics	IRFR1N60APBF		2,000		1	1 $1.88 10 $1.88 100 $0.69 1000 $0.49 10000 $0.49	Buy Now
ComSIT USA	IRFR1N60APBF		1,749			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	IRFR1N60APBF			49 Weeks	75	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHFR1N60ATRL-GE3 Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHFR1N60ATRL-GE3				1	1 $0.81 10 $0.64 100 $0.50 1000 $0.47 10000 $0.47	Get Quote
Vishay Intertechnologies IRFS9N60ATRRPBF Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IRFS9N60ATRRPBF				800	1 - 10 - 100 - 1000 $1.59 10000 $1.50	Get Quote
EBV Elektronik	IRFS9N60ATRRPBF			49 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGH48N60A3 Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXGH48N60A3				1	1 $7.50 10 $6.02 100 $4.38 1000 $4.38 10000 $4.38	Get Quote

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N60A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
30N60 Abstract: N60A 30N60A igbt 30N60 IXGH30N60U1 30N60U1 IXGH30N60AU1 IXGM30N60A Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90	Original	wei60a 30n60 30n60a o-204ae +630n60u1 n60a igbt 30n60 ixgh30n60u1 ixgh30n60au1 ixgm30n60a	PDF
10N60U1 Abstract: 10n60au1 N60AU1 ixgh 1500 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N60U1 IXGH 10 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	n60u1 n60au1 moun000 10n60au1 +210n60u1 ixgh 1500	PDF
30n60 Abstract: IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A n60u1 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH30 N60U1 IXGH30 N60AU1 VCES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£2	OCR Scan	ixgh30 n60u1 n60au1 30n60u1 +630n60au1 30n60 ixgh30n60u1 ixc 844 n60u 30n60a	PDF
20n60a40 Abstract: 20N60A 20N60 20N60A9 igbt 20n60 Contextual Info: Not for new designs Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	o-247 o-204 o-204ae 20n60 +620n60a 20n60u1 20n60au1 20n60a40 20n60a9 igbt 20n60	PDF
IXGH20N60AU1 Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient	Original	n60u1 n60au1 o-247 ixgh20n60u1 +3ixgh20n60au1 20n60au1 gh20n60au1	PDF
30N60A Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	n60u1 n60au1 o-247 30n60u1 +230n60au1 30n60a	PDF
30N60U1 Abstract: 30n60 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	n60u1 n60au1 30n60u1 30n60au1 +130n60	PDF
40N60 Abstract: G 40N60 igbt 40n60 igbt 40N60A IC IGBT 40N60 g 40n60 N60A Contextual Info: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES IC25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	o-247 40n60 40n60a o-204ae +5g 40n60 igbt 40n60 igbt ic igbt 40n60 g 40n60 n60a	PDF
40N60 Abstract: 40n60 igbt 40N60A IXGH40N60 G 40N60 igbt N60A IC IGBT 40N60 g 40n60 IXGH40N60A IXGM40N60A Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C, limited by leads	Original	13/10j 40n60a 40n60 o-204ae +840n60 igbt ixgh40n60 g 40n60 igbt n60a ic igbt 40n60 g 40n60 ixgh40n60a ixgm40n60a	PDF
40n60 igbt Abstract: 40n60 IXGH/40n60 igbt 40N60A G40N60a IXGH/IXGM 40 N60A G 40N60 igbt igbt equivalent to 40n60 IXGH40N60 40n60 transistor Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads	Original	40n60 igbt 40n60 ixgh/40n60 igbt 40n60a +6g40n60a ixgh/ixgm 40 n60a g 40n60 igbt igbt equivalent to 40n60 ixgh40n60 40n60 transistor	PDF
30n60 Abstract: 1XSH30N60A Contextual Info: lOIXYS lowvcemigbt IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A High Speed IGBT Short Circuit SOA Capability o- Symbol Test Conditions V Maximum Ratings Tj = 25°C to 150°C 600 V vC0B Tj = 25°C to 150°C; RaE = 1 Mfi 600 V VGES Continuous ±20 V v Transient ±30 V	OCR Scan	30n60 30n60a 30n60u1 30n60au1 +11xsh30n60a	PDF
20N60AU Abstract: 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60 Contextual Info: Not for new designs IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A Low VCE sat IGBT High Speed IGBT VC E S ^C25 Vy C E (sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability §Symbol Test Conditions VCES Tj v v v Maximum Ratings = 25°C to 150°C 600 V	OCR Scan	o-247 t0-204ae 20n60au 20n60a +8g20n60 n60a 20n60 30 n60a bt 151 600 20n60 g lt0b igbt 20n60	PDF
20N60A Abstract: D-68623 20N60U1 20N60AU Contextual Info: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	n60u1 n60au1 d-68623 20n60u1 +320n60au1 20n60a 20n60au	PDF
20N60A Abstract: f 20n60a N60A 20N60 20N60AU1 IXGH 20 N60A 30NC60 igbt 20n60 Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 40 A IC90	Original	20n60 20n60a o-204ae 20n60u1 +620n60au1 f 20n60a n60a ixgh 20 n60a 30nc60 igbt 20n60	PDF

IXGH30N60U1 Abstract: IXGH30N60AU1 30N60U1 n60u1 30N60AU1 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 30 N60U1 IXGH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	n60u1 n60au1 30n60au1 30n60u1 +2ixgh30n60u1 ixgh30n60au1	PDF
Contextual Info: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings	OCR Scan	n60u1 n60au1 o-247 4hflb22b +220n60u1 20n60au1	PDF
30n60u Abstract: 30N60A ixgh30n60a IXGM30N60 Contextual Info: L o w V cE s a t IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A High speed IGBT Symbol Test Conditions V y ces Tj = 25°C to 150°C 600 V v CGR ^ 600 V VGES Continuous ±20 V v GEM T ransient ±30 V *C25 Tc = 25°C 50 A ^C90 T0 = 90°C 30 A ^c m Tc = 25°C, 1 ms	OCR Scan	o-247 30n60u1 30n60au1 4bflb22b +430n60u 30n60a ixgh30n60a ixgm30n60	PDF
Contextual Info: IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Low VCE sat IGBT High speed IGBT Maximum Ratings Symbol Test Conditions VCES T j = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v GES Continuous ±20 V VGEM T ransient ±30 V U25 Tc = 25°C 40 A ^C90	OCR Scan	o-247 ddd3s72	PDF
32N60B Abstract: 32N60A N60B DIXYS IXGH32N60B Contextual Info: DIXYS HiPerFAST IG BT IXGH 32 N60A IXGH32 N60B VCES ^C25 VCE sat tfi 600 V 600 V 60 A 60 A 2.9 V 2.5 V 125 ns 80 ns Prelim inary data ÔE Sym bol Test C onditions Maximum Ratings V t ces Tj = 25°C to 150°C 600 V vt c g r Tj = 25°C to 150°C; RGE = 1 MQ	OCR Scan	ixgh32 o-247 32n60a 32n60b +3n60b dixys ixgh32n60b	PDF
30n60 Abstract: 30N60A igbt 30N60 30 N60A N60A 30N60U1 IXGH30N60AU1 IXGH30N60A IXGH30N60U1 Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90	Original	30n60 30n60a o-204ae 30n60u1 +730n60au1 igbt 30n60 30 n60a n60a ixgh30n60au1 ixgh30n60a ixgh30n60u1	PDF
40n60 igbt Abstract: 40n60 40N60A G 40N60 igbt 40n60 equivalent D-68623 igbt equivalent to 40n60 Contextual Info: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES I C25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	o-247 d-68623 40n60 igbt 40n60 +440n60a g 40n60 igbt 40n60 equivalent igbt equivalent to 40n60	PDF
30N60AU1 Abstract: 30N60U1 IXSH30N60U1 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR	Original	n60u1 n60au1 30n60u1 30n60au1 +1ixsh30n60u1	PDF
10N60A Abstract: IGBT 10N60 10N60 10N60 e N60A Contextual Info: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	10n60a 10n60 10n60u1 igbt 10n60 +210n60 e n60a	PDF
30N60 Abstract: 30N60A igbt 30N60 N60A IXYS 30N60 mos 30N60 30N60U1 A2760 Contextual Info: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	o-247 30n60 30n60a o-204ae +6igbt 30n60 n60a ixys 30n60 mos 30n60 30n60u1 a2760	PDF

N60A Search Results

N60A Price and Stock

Vishay Intertechnologies IRFB9N60APBF

Vishay Intertechnologies IRFR1N60APBF

Vishay Intertechnologies SIHFR1N60ATRL-GE3

Vishay Intertechnologies IRFS9N60ATRRPBF

IXYS Corporation IXGH48N60A3

N60A Datasheets Context Search

30N60

10N60U1

30n60

20n60a40

IXGH20N60AU1

30N60A

30N60U1

40N60

40N60

40n60 igbt

30n60

20N60AU

20N60A

20N60A

IXGH30N60U1

30n60u

32N60B

30n60

40n60 igbt

30N60AU1

10N60A

30N60