N60A Search Results

N60A Datasheets (18)

Part	Manufacturer	Description	Datasheet Type	PDF
CWS20N60AC	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications.	Original	PDF
NCEAP018N60AGU	NCEPOWER	NCEAP018N60AGU is an automotive-grade N-channel Super Trench II power MOSFET with 60 V drain-source voltage, 270 A continuous drain current, and low on-resistance of 1.4 mΩ typical at 10 V gate-source voltage, optimized for high-frequency switching applications.	Original	PDF
20N60A	AK Semiconductor	20A600V N-channel enhancement mode MOSFET with 20A continuous drain current, 600V drain-source voltage, 0.33Ω typical on-resistance at 10V gate voltage, available in TO-220F, TO-247 and TO-247S packages.	Original	PDF
35N60A	AK Semiconductor	35A 600V N-channel enhancement mode MOSFET with low on-resistance of 0.13 ohms typical at 10V gate voltage, high switching speed, and TO-247 package for general power switching applications.	Original	PDF
8N60A	AK Semiconductor	8A 600V N-channel enhancement mode MOSFET with typical on-resistance of 0.85 ohms at VGS = 10V, available in TO-220AB, TO-220F, and TO-263 packages, featuring high dv/dt capability and 100% avalanche tested performance.	Original	PDF
5N60A	AK Semiconductor	5A600V N-channel enhancement mode MOSFET with 1.67 ohm typical RDS(on) at 10V VGS, available in TO-220AB, TO-220F, TO-263, TO-252, and TO-251 packages, featuring high dv/dt capability and 100% avalanche tested performance.	Original	PDF
7N60A	AK Semiconductor	7N60A N-channel MOSFET with 600V drain-source voltage, 7A continuous drain current, 1.0 ohm typical on-resistance at 10V gate drive, TO-220AB, TO-220F, TO-263, TO-252, and TO-251 packages available.	Original	PDF
CWS20N60AF	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications.	Original	PDF
NCEAP025N60AG	NCEPOWER	NCEAP025N60AG is an Automotive N-Channel Super Trench II Power MOSFET with 60 V drain-source voltage, 185 A continuous drain current, 2.0 mΩ typical RDS(on) at VGS = 10 V, and 175 °C operating junction temperature.	Original	PDF
CWS24N60AF	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS24N60A with 150 mOhm RDS(on) and 24A continuous drain current, designed for high-efficiency power applications including PFC, SMPS, UPS, adapters, and LED lighting.	Original	PDF
CWS15N60AF	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS15N60A with 280 mΩ RDS(on), 15A continuous drain current, fast switching, low gate charge, and 100% avalanche tested for high efficiency power applications.	Original	PDF
CWS20N60AZ	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications.	Original	PDF
CWS24N60AZ	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS24N60A with 150 mOhm RDS(on) and 24A continuous drain current, designed for high-efficiency power applications including PFC, SMPS, UPS, adapters, and LED lighting.	Original	PDF
10N60A	AK Semiconductor	10A 600V N-channel enhancement mode MOSFET with low on-resistance of 0.75 ohm typical at VGS = 10V, available in TO-220F, TO-220C, and TO-263 packages, featuring high dv/dt capability and 100% avalanche tested performance.	Original	PDF

2N60A	AK Semiconductor	2A 600V N-channel enhancement mode MOSFET with typical on-resistance of 3.5 ohms at VGS = 10V, low gate charge, and high dv/dt capability, available in TO-251 and TO-252 packages.	Original	PDF
12N60A	AK Semiconductor	12A 600V N-channel enhancement mode MOSFET with typical on-resistance of 0.5 ohm at VGS = 10V, available in TO-220F and TO-220C packages, featuring high dv/dt capability and 100% avalanche tested performance.	Original	PDF
4N60A	AK Semiconductor	4A 600V N-channel enhancement mode MOSFET with typical on-resistance of 2.1 ohms at VGS = 10V, available in TO-220AB, TO-220F, TO-263, TO-251, and TO-252 packages, featuring low gate charge and high dv/dt capability.	Original	PDF
6N60A	AK Semiconductor	6A 600V N-channel enhancement mode MOSFET with typical on-resistance of 1.4 ohms at VGS = 10V, available in TO-220AB, TO-220F, TO-263, TO-252, and TO-251 packages.	Original	PDF

N60A Price and Stock

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Vishay Intertechnologies IRFB9N60APBF MOSFET N-CH 600V 9.2A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFB9N60APBF	Tube	5,929		1	1 $3.75 10 $3.75 100 $1.72 1000 $1.30 10000 $1.24	Buy Now
Mouser Electronics	IRFB9N60APBF		1,112			1 $2.26 10 $1.47 100 $1.42 1000 $1.30 10000 $1.23	Buy Now
TTI	IRFB9N60APBF	Tube	2,950		50	1 - 10 - 100 $1.36 1000 $1.36 10000 $1.22	Buy Now
EBV Elektronik	IRFB9N60APBF		8,700	9 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Wuhan P&S	IRFB9N60APBF		3,000		1	1 $10.69 10 $10.69 100 $3.57 1000 $3.21 10000 $3.21	Buy Now
Vishay Intertechnologies IRFR1N60APBF MOSFET N-CH 600V 1.4A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR1N60APBF	Tube	2,918		1	1 $2.27 10 $2.27 100 $1.03 1000 $0.79 10000 $0.63	Buy Now
Avnet Americas ()	IRFR1N60APBF	Bulk	32	8 Weeks	1	1 $0.42 10 $0.42 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
	IRFR1N60APBF	Bulk		8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.62	Buy Now
Mouser Electronics	IRFR1N60APBF		2,862			1 $2.23 10 $0.95 100 $0.80 1000 $0.65 10000 $0.60	Buy Now
TTI	IRFR1N60APBF	Tube	1,275		75	1 - 10 - 100 $0.64 1000 $0.60 10000 $0.56	Buy Now
EBV Elektronik	IRFR1N60APBF		2,850	9 Weeks	75	1 - 10 - 100 - 1000 - 10000 -	Buy Now

IBS Electronics	IRFR1N60APBF				1	1 $0.92 10 $0.92 100 $0.92 1000 $0.90 10000 $0.84	Buy Now
Alpha & Omega Semiconductor AOD2N60A MOSFET N-CH 600V 2A TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	AOD2N60A	Cut Tape	2,439		1	1 $1.06 10 $0.66 100 $0.43 1000 $0.30 10000 $0.30	Buy Now
	AOD2N60A	Digi-Reel	2,439		1	1 $1.06 10 $0.66 100 $0.43 1000 $0.30 10000 $0.30	Buy Now
IXYS Corporation IXGN320N60A3 IGBT MOD 600V 320A 735W SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGN320N60A3	Tube	1,505		1	1 $38.08 10 $31.14 100 $31.14 1000 $31.14 10000 $31.14	Buy Now
Mouser Electronics	IXGN320N60A3		218			1 $38.08 10 $31.14 100 $31.14 1000 $31.14 10000 $31.14	Buy Now
IBS Electronics	IXGN320N60A3				1	1 $50.60 10 $50.60 100 $49.28 1000 $49.28 10000 $49.28	Buy Now
Vishay Intertechnologies IRFS9N60ATRLPBF MOSFET N-CH 600V 9.2A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IRFS9N60ATRLPBF	Cut Tape	895		1	1 $4.57 10 $3.02 100 $2.14 1000 $2.14 10000 $2.14	Buy Now
	IRFS9N60ATRLPBF	Digi-Reel	895		1	1 $4.57 10 $3.02 100 $2.14 1000 $2.14 10000 $2.14	Buy Now
Avnet Americas	IRFS9N60ATRLPBF	Tape & Reel		8 Weeks	800	1 - 10 - 100 - 1000 $1.62 10000 $1.55	Buy Now
TTI	IRFS9N60ATRLPBF	Reel	800		800	1 - 10 - 100 - 1000 $1.40 10000 $1.40	Buy Now
EBV Elektronik	IRFS9N60ATRLPBF			9 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	IRFS9N60ATRLPBF		9,600		800	1 - 10 - 100 - 1000 $1.09 10000 $1.04	Buy Now

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N60A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
30N60 Abstract: N60A 30N60A igbt 30N60 IXGH30N60U1 30N60U1 IXGH30N60AU1 IXGM30N60A Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90	Original	Wei60A 30N60 30N60A O-204AE 30N60 30N60A 30N60U1 N60A igbt 30N60 IXGH30N60U1 IXGH30N60AU1 IXGM30N60A	PDF
10N60U1 Abstract: 10n60au1 N60AU1 ixgh 1500 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N60U1 IXGH 10 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	N60U1 N60AU1 Moun000 10N60AU1 10N60U1 10N60U1 10n60au1 N60AU1 ixgh 1500	PDF
30n60 Abstract: IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A n60u1 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH30 N60U1 IXGH30 N60AU1 VCES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£2	OCR Scan	IXGH30 N60U1 N60AU1 30N60U1 30N60AU1 30n60 IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A	PDF
20n60a40 Abstract: 20N60A 20N60 20N60A9 igbt 20n60 Contextual Info: Not for new designs Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	O-247 O-204 O-204AE 20N60 20N60A 20N60U1 20N60AU1 20n60a40 20N60A9 igbt 20n60	PDF
IXGH20N60AU1 Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient	Original	N60U1 N60AU1 O-247 IXGH20N60U1 IXGH20N60AU1 IXGH20N60AU1 IXGH20N60U1 20N60AU1 *GH20N60AU1	PDF
30N60A Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	N60U1 N60AU1 O-247 30N60U1 30N60AU1 30N60A	PDF
30N60U1 Abstract: 30n60 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	N60U1 N60AU1 30N60U1 30N60AU1 30N60U1 30n60	PDF
40N60 Abstract: G 40N60 igbt 40n60 igbt 40N60A IC IGBT 40N60 g 40n60 N60A Contextual Info: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES IC25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	O-247 40N60 40N60A O-204AE 40N60 G 40N60 igbt 40n60 igbt 40N60A IC IGBT 40N60 g 40n60 N60A	PDF
40N60 Abstract: 40n60 igbt 40N60A IXGH40N60 G 40N60 igbt N60A IC IGBT 40N60 g 40n60 IXGH40N60A IXGM40N60A Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C, limited by leads	Original	13/10J 40N60A 40N60 O-204AE 40N60 40n60 igbt 40N60A IXGH40N60 G 40N60 igbt N60A IC IGBT 40N60 g 40n60 IXGH40N60A IXGM40N60A	PDF
40n60 igbt Abstract: 40n60 IXGH/40n60 igbt 40N60A G40N60a IXGH/IXGM 40 N60A G 40N60 igbt igbt equivalent to 40n60 IXGH40N60 40n60 transistor Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads	Original		PDF
30n60 Abstract: 1XSH30N60A Contextual Info: lOIXYS lowvcemigbt IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A High Speed IGBT Short Circuit SOA Capability o- Symbol Test Conditions V Maximum Ratings Tj = 25°C to 150°C 600 V vC0B Tj = 25°C to 150°C; RaE = 1 Mfi 600 V VGES Continuous ±20 V v Transient ±30 V	OCR Scan	30N60 30N60A 30N60U1 30N60AU1 1XSH30N60A	PDF
20N60AU Abstract: 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60 Contextual Info: Not for new designs IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A Low VCE sat IGBT High Speed IGBT VC E S ^C25 Vy C E (sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability §Symbol Test Conditions VCES Tj v v v Maximum Ratings = 25°C to 150°C 600 V	OCR Scan	O-247 T0-204AE 20N60AU 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60	PDF
20N60A Abstract: D-68623 20N60U1 20N60AU Contextual Info: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	N60U1 N60AU1 D-68623 20N60U1 20N60AU1 20N60A 20N60U1 20N60AU	PDF
20N60A Abstract: f 20n60a N60A 20N60 20N60AU1 IXGH 20 N60A 30NC60 igbt 20n60 Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 40 A IC90	Original	20N60 20N60A O-204AE 20N60 20N60A 20N60U1 20N60AU1 f 20n60a N60A IXGH 20 N60A 30NC60 igbt 20n60	PDF

IXGH30N60U1 Abstract: IXGH30N60AU1 30N60U1 n60u1 30N60AU1 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 30 N60U1 IXGH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	N60U1 N60AU1 30N60AU1 30N60U1 IXGH30N60U1 IXGH30N60AU1 30N60U1 n60u1 30N60AU1	PDF
Contextual Info: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings	OCR Scan	N60U1 N60AU1 O-247 4hflb22b 20N60U1 20N60AU1	PDF
30n60u Abstract: 30N60A ixgh30n60a IXGM30N60 Contextual Info: L o w V cE s a t IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A High speed IGBT Symbol Test Conditions V y ces Tj = 25°C to 150°C 600 V v CGR ^ 600 V VGES Continuous ±20 V v GEM T ransient ±30 V *C25 Tc = 25°C 50 A ^C90 T0 = 90°C 30 A ^c m Tc = 25°C, 1 ms	OCR Scan	O-247 30N60U1 30N60AU1 4bflb22b 30n60u 30N60A ixgh30n60a IXGM30N60	PDF
Contextual Info: IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Low VCE sat IGBT High speed IGBT Maximum Ratings Symbol Test Conditions VCES T j = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v GES Continuous ±20 V VGEM T ransient ±30 V U25 Tc = 25°C 40 A ^C90	OCR Scan	O-247 DDD3S72	PDF
32N60B Abstract: 32N60A N60B DIXYS IXGH32N60B Contextual Info: DIXYS HiPerFAST IG BT IXGH 32 N60A IXGH32 N60B VCES ^C25 VCE sat tfi 600 V 600 V 60 A 60 A 2.9 V 2.5 V 125 ns 80 ns Prelim inary data ÔE Sym bol Test C onditions Maximum Ratings V t ces Tj = 25°C to 150°C 600 V vt c g r Tj = 25°C to 150°C; RGE = 1 MQ	OCR Scan	IXGH32 O-247 32N60A 32N60B 32N60B N60B DIXYS IXGH32N60B	PDF
30n60 Abstract: 30N60A igbt 30N60 30 N60A N60A 30N60U1 IXGH30N60AU1 IXGH30N60A IXGH30N60U1 Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90	Original	30N60 30N60A O-204AE 30N60 30N60A 30N60U1 30N60AU1 igbt 30N60 30 N60A N60A IXGH30N60AU1 IXGH30N60A IXGH30N60U1	PDF
40n60 igbt Abstract: 40n60 40N60A G 40N60 igbt 40n60 equivalent D-68623 igbt equivalent to 40n60 Contextual Info: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES I C25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	O-247 D-68623 40n60 igbt 40n60 40N60A G 40N60 igbt 40n60 equivalent igbt equivalent to 40n60	PDF
30N60AU1 Abstract: 30N60U1 IXSH30N60U1 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR	Original	N60U1 N60AU1 30N60U1 30N60AU1 30N60AU1 30N60U1 IXSH30N60U1	PDF
10N60A Abstract: IGBT 10N60 10N60 10N60 e N60A Contextual Info: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	10N60A 10N60 10N60 10N60A 10N60U1 IGBT 10N60 10N60 e N60A	PDF
30N60 Abstract: 30N60A igbt 30N60 N60A IXYS 30N60 mos 30N60 30N60U1 A2760 Contextual Info: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	O-247 30N60 30N60A O-204AE 30N60 30N60A igbt 30N60 N60A IXYS 30N60 mos 30N60 30N60U1 A2760	PDF

N60A Search Results

N60A Datasheets (18)

N60A Price and Stock

Vishay Intertechnologies IRFB9N60APBF

Vishay Intertechnologies IRFR1N60APBF

Alpha & Omega Semiconductor AOD2N60A

IXYS Corporation IXGN320N60A3

Vishay Intertechnologies IRFS9N60ATRLPBF

N60A Datasheets Context Search

30N60

10N60U1

30n60

20n60a40

IXGH20N60AU1

30N60A

30N60U1

40N60

40N60

40n60 igbt

30n60

20N60AU

20N60A

20N60A

IXGH30N60U1

30n60u

32N60B

30n60

40n60 igbt

30N60AU1

10N60A

30N60