DIXYS Search Results

Contextual Info: DIXYS High Power Diode Modules MDD220 IFRMS 2 x 450 A FAVM 2 x 270 A V RRM VRSM V RRM V V 900 1300 1500 1700 800 1200 1400 1600 Type MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 Symbol Test Conditions ^FRMS TVJ = T' VJM Tc = 100°C; 180° sine ^FAVM

IXSN35N120

Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings

Contextual Info: DIXYS ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK30N60CD1 IXST 30 N60CD1 V CES I Short Circuit SOA Capability 600 V 55 A C25 V C E sat 2.5 V t fi 70 ns TO-247AD (IXSH) Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C

10N100

Contextual Info: DIXYS Low VCE 6al IGBT High speed IGBT IXGH10N100 IXGH10N100A V y c es ^C25 v CE (sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Ae Sym bol Test Conditions Maximum Ratings V ces T, = 25“C t o 150°C 1000 V co„ ^ = 25“C to 150“C; RaE = 1 M£2 1000 V VGEs

ixysmosfets

Contextual Info: DIXYS Ultra-Low VCE sat IGBT vCES IXGH41N60 •c25 ^ C E (s a t) = 600 V = 76 A = 1.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGft Tj = 25°C to 150°C; RGE = 1 MQ 600 V VGEg Continuous ±20 V VGEM Transient

ixys dsei 2x30-04c

Contextual Info: DSEI 2X30-04C/06C DSEI 2X31-04C/06C DIXYS Diode 2X30-04C/06C 2X31-04C/06C FRED V RSM V rrm 440V 640V 400V 600V Symbol Type DSEI 2x 30/31 -04C DSEI 2x 30/31 -06C o -l- I f DSEI2x30 Test Conditions T VJ I "^"v j M A A TVJ = 150°C t = 10 mS (50 Hz), sine t = 8.3 ms (60 Hz), sine

IXTK33N50

Contextual Info: DIXYS High Current MegaMOS FET IXTK 33N50 V DSS I D cont p DS(on) 500 V 33 A 0.17 Q N-Channel Enhancement Mode Preliminary data Symbol Test conditions v DSS Tj = 25°C to 150°C vDQB Tj TO-264AA Maximum ratings = 25°C to 150°C; RGS=1.0 MQ 500 V 500 V

IXGH17N100

Abstract: C5250
Contextual Info: DIXYS IGBT L0W CES IXGH 17N100 IXGH 17N100A V CE sat, High speed Symbol Test Conditions V *C E S Tj = 25°Cto 150°C VCGR T,J = 25°C to 150°C; VGES 1000 V 1000 V Maximum Ratings 1000 V 1000 V Continuous ±20 V VGEM Transient ±30 V ^C25 Tc =25°C 34 A C90

Contextual Info: DIXYS IXSH10N60A High Speed IGBT = 600 V = 20 A = 3V VCES IC25 VCE sat Short Circuit SOA Capability TO-247 AD P re lim in a ry d a ta C (TAB) Symbol Test Conditions v* CES Tj V * CGR Maximum Ratings 600 V T, = 25°C to 150°C; RGE = 1 M ii 600 V v GES Continuous

F219

Abstract: vu050 DIXYS
Contextual Info: DIXYS VUG 50 idAV = 58 A v rrm = 800-1800 V Three Phase Rectifier Bridge v RSM V r„ m V V TVPe -O AS 3 b 3 Li L + - o— 800 1200 1400 1600 1800 900 1300 1500 1700 1900 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* . * delivery time on request

st 247

Contextual Info: DIXYS Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 1400/1600 V 33 A 7V 30 ns CES ^C25 v CE sat t N-Channel, Enhancement Mode TO-247 AD S ym b o l T est C o n d itio n s M axim um R atings

70-0015B

Abstract: DIODE PH AV 20
Contextual Info: DIXYS DSSK 70-0015B Power Schottky Rectifier U av with common cathode V rrm VF 2x35 A 15V 0.33 V Preliminary Data v RSM TyPe V Vrrm V 15 15 DSSK 70-0015B TO-247 AD i I— M - r - w - i 1 I - - ! " A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol

92520E

Contextual Info: DIXYS IXSN 55N120AU1 High Voltage IGBT with Diode V CES IC25 vCE sat 1200 V 110 A 4V Short Circuit SOA Capability Symbol Test Conditions VCES v CGB Tj = 25°Cto150°C Tj = 25° C to 150° C; v GES Continuous Transient v GEM IC25 'c 9 0 ' cm SSOA (RBSOA) Maximum Ratings

Contextual Info: DIXYS IXFJ 32N50Q v¥ DSS 500 V A — CO to HiPerFET Power MOSFETs — ^D cont R Q-Class DS(on) N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOS™ Family tr r 0.15 ß < 250 ns — Preliminary data sheet Maximum Ratings Symbol Test Conditions

Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Q Class IXFH 32N50Q IXFT 32N50Q trr < 250 ns V DSS Tj =25°Cto150°C 500 V Vocn Tj = 25° C to 150° C; RGS= 1 M n 500 V v G5 Continuous ±20 V vGSM Transient ±30 V ^D25 Tc =25°C Kn m Test C onditions

IXYs MCO

Contextual Info: DIXYS High Power Single Thyristor Module MC0450 V RRM = 2000 - 2200 V Preliminary Data V RSM V RRM V DSM v DRM V V 2100 2300 2000 2200 rbi4tf| I _I MCO 450-20io1 MCO 450-22io1 Maximum Ratings Symbol Test Conditions Itrms Itav T vj = T vjm Tc = 85°C; 180° sine

Contextual Info: DIXYS AdvancedTechnical Information P Electrically Isolated Back Surface = = — DS(on) ~ o o 00 HiPerFET Power MOSFETs IXFR 15N80Q V DSS ISOPLUS247™ Q Class ^D25 V 13 A 0.60 a trr <250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances

26N80Q

Abstract: 26N80
Contextual Info: dIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class Symbol Test Conditions Maximum Ratings VDSS Td = 25° C to 150° C 500 V Voon Tj = 25° C to 150°C; RGS= 1 MQ 500 V Vos Continuous ±20 V Transient ±30 V osm '* 5

diode lt 247

Contextual Info: DIXYS HiPerFET Power MOSFETs IXFH 67N10 IXFH 75N10 VDSS ^D25 100 V 100 V 67 A 75 A V DSS Test Conditions ^ Maximum Ratings =25°C to150°C 100 V v DGR T j = 2 5 °C to 1 5 0 °C ; RGS=1 M£2 100 V Vos Continuous i2 0 V VGSM Transient d30 V ^ D25 Tc =25°C

lg tv power board

Abstract: tv lg lg tv
Contextual Info: DIXYS VT0 39 ECO-PAC Three Phase Rectifier Bridge •dAV V RRM 39 A 600-1200 V Prilim inary data VRSM VDSM VRRM VDRM V V 700 900 1300 600 800 1200 Symbol IdAV Type Ak VTO 39-06ÎO7 VTO 39-08ÍO7 VTO 39-12io7 I tavm I tsm T VJ = ¿OG -o A o II cc > 39

35N25

Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Contextual Info: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

0504N

Contextual Info: MbâbEEb DDÜ154G GSb H I X V DIXYS K3BT with Diode IXSN50N120AU1 ^C25 V CES High Short Circuit SOA Capability CE sat = 75 A = 1200 V = 3.7 V f 3 2 Preliminary data (09/93) 4 i 1 Symbol Test Conditions VCE* Tj = 25‘C to 150'C 1200 V v « * Tj = 25'C to 150’ C; Ra = 1 M i l

thyristor eto

Contextual Info: DIXYS Phase Control Thyristors vR RM = 800 -1400 v RRM ^T RMS = ^ ' t (AV)M = 6 9 A V RSM VRRM v DSM V DRM V V 900 1300 1500 Type CS35-08io4 CS35-12io4 CS35-14io4 800 1200 1400 1/4"-28 UNF-2 A Symbol *T(RMS) ^T(AV)M ^TSM Test Conditions 120 63 69 A A A 10 ms (50 Hz), sine

DIXYS

Contextual Info: DIXYS