3CUN
Abstract: IXTK33N45 IXTK33N50
Contextual Info: Preliminary Data Sheet v High Current MegaMOS FET IXTK33N45 IXTK33N50 p DSS ^D25 450 V 500 V DS on 33 A 0.16 Q 33 A 0.17 Q N-Channel Enhancement Mode M axim um ra tin g s Sym bol Test c o n d itio n s VDss Tj = 25°C to 150°C v DGR Tj = 2 5 °C to 150°C; %s = 1.0 MO
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IXTK33N50
Abstract: 33N50 IXTK33N45 P 317 diode aa 113
Contextual Info: a ix Y S Preliminary Data Sheet V DSS High Current MegaMOS FET IXTK33N45 IXTK33N50 450 V 500 V ^D25 □ DS on 33 A 0.16 a 33 A 0.17 a N-Channel Enhancement Mode Symbol Test conditions V DSS Tj = 25°C to 150°C v DGR T.J = 25°C to 150°C;’ R GS „ = 1.0 M£i
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C246
Abstract: IXTK33N50 C-246
Contextual Info: g ix Y s High Current MegaMOS FET IXTK33N50 V DSS D cont p DS(on) = 500 V = 33 A = 0.17 £2 N-Channel Enhancement Mode Preliminary data Symbol Test conditions vDSS Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS= 1.0 Vos v QSM Maximum ratings M £i Continuous
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ixtk33n50o-264c2-461xtk33ns0+3c2-47c246c-246
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IXTK33N50
Contextual Info: n ixY S High Current MegaMOS FETs IXTK33N50 = 500 V V D SS = 33 A = 0.17 0 D 25 RD S o n N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions V DSS T j = 2 5 °C to 150°C v DGR T d = 25°C to 150°C; RGS = V GS Maximum Ratings TO-264 AA
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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IXTK33N50
Contextual Info: DIXYS High Current MegaMOS FET IXTK 33N50 V DSS I D cont p DS(on) 500 V 33 A 0.17 Q N-Channel Enhancement Mode Preliminary data Symbol Test conditions v DSS Tj = 25°C to 150°C vDQB Tj TO-264AA Maximum ratings = 25°C to 150°C; RGS=1.0 MQ 500 V 500 V
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diode DSDI 9
Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Contextual Info: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B
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o-247o-220o-264ixgh24n50b+15ixgh24n50bu1ixgh50n50b10n60aixgh24n60bixgh24n60bu1ixgh50n60bdiode dsdi 9ixln35n120au1diode dsdi 12ixlh35n120adsp8-12aa1931dsp8-08as95-06daixln35n120a
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Irfp250 irfp460
Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
Contextual Info: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)
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o-204o-264isoplus247o-220+16o-252o-247o-268isoplus220o-263ot-227birfp250 irfp460ixta3n12036p10irfp450 bridgen503irfp460 complementaryixth30n25ixth48n15ixth12n100q16p20
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16rfp15n05rfp50n05lrfd14n05lrfd14n05lsmrfd14n05smrfp14n05lirf540 complementaryirfz44n complementarystd2n52toshiba irfz44a datasheetstp2na60ssh6n80rfp60n06ste38na50irf630 complementaryirf3205 ir
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SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L
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buz10buz11buz11abuz71+16buz71abuz72abuz80airf520irf530irf540ssh6n80rfp60n06irf3205 irbuk417-500aesfp70n03buz91a2sk2717stmicroelectronicsbuz22ixfh13n50
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fqp60n06
Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL
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