IRF520 Search Results

Power MOSFETs Application Notes irf520

Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature

IRF520N

Abstract: specifications Irf520N
Contextual Info: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier

IRF520

Abstract: International Rectifier IRF520 IRF52
Contextual Info: PD-9.313K International S Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1 0 0 V R DS on = 0 .2 7 Q

IRF50

Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
Contextual Info: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

TO-22OAB

Abstract: SD57a irf520n to22oab
Contextual Info: PD-91339A International l ö R Rectifier IRF520N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V R D S o n = 0 . 2 0 Î 2 lD = 9.7A

Contextual Info: International iMiRectifier P D - 9 .1 3 3 9 IRF520N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 1 0 0 V ^ D S o n = Id =

Contextual Info: International i ^ Reclifier PD91340 IRF520NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D escriptio n Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRF520A Advanced Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^DS on = 0.2Í2 lD = 9-2 A ■ 175°C Operating Temperature

irf520 mosfet

Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

IRF520N

Abstract: AN-994 IRF520NL IRF520NS
Contextual Info: PD -91340A IRF520NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF520NS Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.20Ω G ID = 9.7A S

IRF520

Abstract: irf521 IRF523 F522
Contextual Info: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF520NPBF

Abstract: IRF1010 4.5v to 100v input regulator
Contextual Info: PD - 94818 IRF520NPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD- 95749 IRF520NSPbF IRF520NLPbF • Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline

Contextual Info: IRF520FI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)7 I(DM) Max. (A) Pulsed I(D)5 @Temp (øC)100# IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)35 Minimum Operating Temp (øC)

IRF520N

Abstract: specifications Irf520N 7A, 100v fast recovery diode
Contextual Info: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD- 95749 IRF520NSPbF IRF520NLPbF • Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline

IRF520 application note

Abstract: IRF520 IRF520P 910170
Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

irf521

Contextual Info: N-CHANNEL POWER MOSFETS IRF520/521 FEATURES • • • • • • • Lower R dsion Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

AN-994

Abstract: IRF520V IRF520VL IRF520VS IRF530S
Contextual Info: PD - 94306 IRF520VS IRF520VL HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 100V RDS on = 0.165Ω

jrf 520

Abstract: irf 44 n schematic diagram UPS 600 Power structure IRF520 irf5205 IRF521 IRF520 application note IRF 520 TRANSISTOR n 522 IRF522
Contextual Info: 3QE P /S T J • 7cjScjg37 QQSTTb? 3 ■ S G S -T H O M S O N ^ D œ iŒ ig T O iO ig i 6^ S-THOMSON TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V Dss ^D S on IRF520 IRF520FI IRF521 IRF521FI 100 100 80 80 0.27 Q 0.27 n Id ' 9.2 A 7 A IRF522 IRF522FI

transistor IRF520

Abstract: IRF520 mos die 312c IRF52
Contextual Info: 3QE D 7 T 2 C 237 0D30130 5 • Q S-THOMSON SGS-THOMSON IRF520 CHIP Ey N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:

Contextual Info: IRF520NS/L l l l l l l Advanced Process Technology Surface Mount IRF520NS Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of accommodating die

fet ba7 transistor

Abstract: k106 transistor transistor 9651 fet ba7 IRF520 IRF521 k 106 40411 transistor D84CK2 transistor 40411
Contextual Info: IRF520,521 D84CL2.K2 ßOTlRi°IMäg IFHT FIELD EFFECT POWER TRANSISTOR 8 AMPERES 1100, 60 VOLTS RlDS ON = 0.3 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­