TO22OAB Search Results

PHP18NQ10T

Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
Contextual Info: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America

Q400414

Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
Contextual Info: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

bd639

Abstract: bd640 BF467 B0239C B0544 bd639 npn B0250C BD546D BD243 b0546
Contextual Info: Plastic Power Transistors 1? 2-6A Up to 65W oc Device Type B0239 BD239A B D 239B B D 239C BD240 BD240A BD240B BD240C BD241 BD241A B 0241 B BD241C BD242 BD242A BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B B D 244C > o Ul o > > 'c u V V V A Ul

TO-22OAB

Abstract: SD57a irf520n to22oab
Contextual Info: PD-91339A International l ö R Rectifier IRF520N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V R D S o n = 0 . 2 0 Î 2 lD = 9.7A

10N120BN

Contextual Info: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

2SD1087

Abstract: 2SD1094 2SD1067 2SD1066 2SD1071 "SCA 62" 2SD1063 2SD1064 2SD1065 2SD1069
Contextual Info: - 234 - æXËtë M S ŒJ f± U=2bX¡, *W(ilc=2bV '4v n n # m tt (Ta=25‘ C) [*EPtttyp0] Pe* (max) (V) (A) (V) <W) (ÏÏ) VcB (V) (/¿A) (min) (max) VCE (V) (max) (V) Ic / I e (A) Ic (A) (V) Ib (A) 2SD1063 PSW 60 50 7 60 100 40 70 280 2 1 0.4 4 2SD1064 PSI

2SB737

Abstract: 2SD786 EL 14v 4c 2SD758B 2SB733 2SD756 2SD758 2SD772 2SD786S 2sd797
Contextual Info: - 224 - Ta=25'C, *EP(iTc=25‘ C m £ tt & m ä VCBO Vc e o (V) (V) n lc(DC) Pc Pc* Ic b o (A) <W) (W) (Uh) Vro (V) n & 14 hF E (min) (roax) (Ta=25‘ C) Ir/Ir (Aj“ Vp f (V) [*E P (ity p fif] (max) '(V )' Ic CA) Ib (A) 2SD743 H i LF PA/LS PSW 100 80 4

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

2SC3213

Abstract: 2SC3170 2SC3159 MP40 2sc3153 2sc3180n 2sc3211 2SC3157 2SA1263N 2SC3175
Contextual Info: - 148 - Ält iàü Jfcfcæfë Ta=25‘ C,*EDtàTc=25,C -6 •V-L /V rrj /ü ; Vc e o (V) 2SC3143 2SC3144 HV SW/LF A =i* 2SC3145 (V) . Pc Pc* (A) (W) (W) 0. 08 n m •C(DC) ICBO (max) ink) VcB (V) 0. 1 0.2 120 (min) hF E 60 180 160 HS Stf/D 70 60 3 1.75

2SB897

Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
Contextual Info: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te

2SA798

Abstract: 2SA733 2SA785 2SA778AK 2sc1567 2SA800 2SC1398 2SA720A 2SA798 g 2SA743
Contextual Info: 14 - m % T a = 2 5 cC , * E P Í Í T c = 2 5 ‘ ü m 2SA719 & tt fóT 2SA720 2SA720A fâT 2SA732 m M £ & VcBO VcEO (V) (V) Ici D C) Pc Pc* (W) (W) \M ld A / (A) 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 85 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 -10 40 200 -10

2SC2291

Abstract: 2SC2320 2SC2338 2SC2285A-MA 2SA1010 2SC2289 2SC2318 2SC2329 2SC2286-KA 2SC2287-KA
Contextual Info: - 120 - m % Ta=25'C, *EP(iTc=25<C m % f t & m & VcBO Vc e o (V) (V) 1c ( d c ) (A) Pc Pc* (W) m i CBC\ vm 3x j? VcB (V) (Uk) , hF E (min) ft fê (max) tt (Ta=25‘ 1C) Ic / I e (A) Vc e (V) 2SC2287-KA Bn an Bn Bn 2SC2287-MA bm VHF PA 38 18 1.5 17 500 30

2SC3216

Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
Contextual Info: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265

12n60c3d

Abstract: IGBT 12n60c3D
Contextual Info: u A Q Q ie HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis­

10N120BN

Abstract: G10N120BN ta49290 T0263AB
Contextual Info: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS S em iconductor January 1999 Data Sheet 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

Contextual Info: HGTP2N120CND, HGT1S2N120CNDS Semiconductor D ata S h eet M arch 1999 13A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

Contextual Info: HGTP5N120BN, HGT1S5N120BNS D ata S h eet Jan u ary 1999 21 A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and

2SB504

Abstract: 2SB507 2SB506A 2SB508 2SB511 2SD325 2sb560 2SB506 2SB536 2SD331
Contextual Info: - 54 - Ta=25cC, *EP(äTc=25‘ C m % f fl £ & m VcBO VcEO lc ( D O Pc Pc* (V) (V) (A) (W) (W) ICBO (max) ( j ü A) % tä 4# te 0 ^ 2 5 *0 ) [*E P (ä typ 3 hF E VcB (V) (min) (max) Vc e (V) ¡ c/ I e (A) (max) (V) (V) Ic (A) Ib (A) 2SB434G LF PA/SW -60

2sa10

Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
Contextual Info: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044

2SD889

Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A

2SA1152

Abstract: 2SC2719 2SC2770 2SC2724 2SA1154 2SC2110 2SC2132 2SC2727 2SC2159 2SC2718
Contextual Info: - 132 - M X Ë f à Ta=25‘C, *£P(ÍTc=25‘C } m % & 2SC2712 2SC2713 2SC2714 2SC2715 2SC2716 2SC2717 2SC2718 2SC2719 2SC2720 2SC2721 2SC2724 2SC2727 2SC2731 2SC2732 2SC2733 2SC2734 2SC2735 2SC2736 2SC2738 2SC2739 2SC2740 2SC2749 2SC2750 2SC2751 2SC2752

SK12100C

Abstract: SK1240C 1270C
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-22OAB PACKAGE Low switching noise FULLY INSULATED PACKAGE A

2SC4607

Abstract: 2SC4614 2SC4596 2sc4622 2SC4621 2SC4570 2SC4571 2SC4572 2SC4573 2SC4574
Contextual Info: - 208 - Ta=25‘C. *EpfáTc=25cC 2SC4570 2SC4571 2SC4572 2SC4573 2SC4574 2SC4575 2SC4576 2SC4578 2SC4579 2SC4580 2SC4581 2SC4582 2SC4589 2SC4591 2SC4592 2SC4593 2SC4594 2SC4595 2SC4596 2SC4597 2SC4598 2SC4599 2SC4600 2SC460Î 2SC4602 2SC4603 2SC4606 2SC4607