2sa1032
Abstract: 2SA1031 Hitachi DSA002754
Contextual Info: 2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 LG and 2SC2310 Outline 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage
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2sa10312sa10322sc4582sc2310+1hitachi dsa002754
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2sc458
Abstract: 2SC458 datasheet 2SC2310 2SA1031 2SA1032 Hitachi DSA00396
Contextual Info: 2SC458 LG , 2SC2310 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C)
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2sc4582sc23102sa10312sa1032+22sc458 datasheethitachi dsa00396
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2SA1031
Abstract: 2SA1032
Contextual Info: 2SA1031,2SA1032 Silicon PNP Epitaxial HITACHI Application • Low frequency low noise amplifier • Complementary pair with 2SC 458 LG and 2 S C 2310 Outline TO-92 (1 ) 1. Emitter 2. Collector 3. Base 118 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C)
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2sa10312sa10322sc4582sc2310 |
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2sa10
Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
Contextual Info: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044
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ta-25icsa10112sa10122sa1013+112sa10152sa1015l2sa10162sa10412sa10422sa10432sa102sc1815l2sc25622sa10352sa1016k
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2SA1032
Abstract: 2SA1031 2SC2310 2sC2310 y
Contextual Info: HITACHI 2SA1031, 2SA1032 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER Complementary pair with 2SC458 LG and 2SC2310 riW « i Q.WUuJ § «.»My p 1, Emiiier . it * . ar 2. i Colica« J. B»ït (Dimensioni in mm) I èp h Vi 5i V I —J ji ? (JEDEC TO-92)
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2sa10312sa10322sc45s2sc2310+12sc2310 y
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2SC458
Abstract: 2sc2310 Hitachi DSA002755 2SC458 B
Contextual Info: 2SC458 LG , 2SC2310 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SA1031 and 2SA1032 Outline 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage
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2sc4582sc23102sa10312sa1032+2hitachi dsa0027552sc458 b
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2SA1115
Abstract: 2SA1115 E DTA124EK RT1P141C 2SA1175 2sa564 2SA1309A DTA124ES 2SA1015 2SA1018
Contextual Info: - 28 - a S € Type No. « Manuf. = 2SA 1317 ' 2SA 1318 - ft 2SA 1319 „ m * SANYO TOSHIBA NEC iK/nruß 2SAU75 2SA1015 2SA953 tL HITACHI 2SA1032 ü it iM FUJITSU tö T MATSUSHITA = m MITSUBISHI 2SA1309A 2SA1115 □ — A ROHM 2SA933S 2SA933 2SA1309A 2SA965
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2sau752sa9532sa10322sa1309a+122sa10182sa8792sa11152sa933s2sa9332sa1115 edta124ekrt1p141c2sa11752sa564dta124es2sa1015
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2SC2310
Abstract: 2sc458 2SC458A 2SC458C 2SA1031 2SA1032 2SC458CLG C45S 2sc2310h "2SC458"
Contextual Info: HITACHI 2SC458 LG , 2SC2310 SILICON NPN EPITAXIAL LOW FREQUENCY LO W NOISE AMPLIFIER Com plem entary pair with 2SA1031 and 2SA1032 no 1. limitier 2. Collector 3. h .i*c Dimensions in mm I A B S O L U T E MAXIMUM R A T IN G S (Ta=25°C) Item Symbol M AXIM UM C O L L E C T O R D ISSIP A T IO N
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2sc4582sc23102sa10312sa1032+62sc23i02sc458a2sc458c2sc458clgc45s2sc2310h
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2SC458C
Abstract: 2sc2310 2sC2310 y 2SC231
Contextual Info: H ITACHI 2 S C 4 5 8 C L G , 2 S C 2 3 1 0 SILIC O N NPN EPITAXIAL LOW FR EQ U EN C Y LOW NOISE AMPLIFIER Complementary pair with 2SA1031 and 2SA1032 t t. U m ilici 1. CoMcUof I J 3 . ilav c l)in«cmiisi> nt tü> I ABSOLUTE MAXIMUM RATINGS (Ta=25°C) item
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2sc458c2sc23102sa10312sa1032+32sc4582sc2310 y2sc231
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2SA1032
Abstract: 2SA1031 Hitachi DSA0097 2SC2310 2SC458
Contextual Info: 2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 LG and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item
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2sa10312sa10322sc4582sc2310+1hitachi dsa0097
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2SC458
Abstract: 2SC458 C,D 2sC2310
Contextual Info: 2SC458 LG , 2SC2310 Silicon NPN Epitaxial HITACHI Application • L o w frequency lo w noise a m p lifie r • C om plem entary pair w ith 2SA1031 and 2SA1032 Outline TO-92 (1) I II i 1. Emitter 2. Collector 3. Base 3 2 u 1 271 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25 °C)
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2sc4582sc23102sa10312sa1032+12sc458 c,d
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2sa970
Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925
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2sb6752sb7272sb13392sa1207+102sa9702sa988sa11272sa904a2sa10382sa564a2sa9062sa10152sa11422sa949
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2SB737
Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127
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2sa10152sa9882sa10302sa1127+122sa9332sa12092sa9492sa11422sb6482sa13522sb7372sa9782sa13062sa933 r2sa9702sa929
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7ic mb4213nec 12f triacf10p048ktc3114 equivalentsmd transistor marking 02ndiode pj 57 ss14bc517 equivalent
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BSW45A
Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A >= Manufacturer V(BR)CEO fr (V) (Hz) See Index Micro Elecs Semi Inc Advncd Semi
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bc212labcw862sb637k2sb710a+72sa8912sb621absw45alow-power silicon pnpp60n2sa1299ebc212bp
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2SA1030
Abstract: 2SA1029 Hitachi DSA002754
Contextual Info: 2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline 2SA1029, 2SA1030 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO –30
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2sa10292sa10302sc4582sc2308+1hitachi dsa002754
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2sa1046
Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350
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2sa10012sa10022sa10031602sa1004+162sa10052sa10062sa1006a2sa1006b2sa10072sa10962sa10462sa10232sa1023 equivalent2sc23982sa10262sa10662sa10942sa10272sc25252sc2375
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2n2222/aktn2222/a2sa1150kta1272+162sa15102sb546a2n2369/aktn2369/a2sa1151kta1266lm8550ktd20262sc2320 equivalentnec 12f datasheet2n3904 motorola2sc2240 equivalent2n3906 motorola2sc19832n5400 motorola2sd1960
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6transistor smd zgy6 smd transistormb4213y4 smd transistorsmd transistor zaakgt25n120nda
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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2SA1015
Abstract: 2SA733 2SA847A 2SA968 2SA933 2SA823 2SA817 2sa777 2SA970 2SA935
Contextual Info: - m « Type No. 2SA 816 2SA 817 -• 2 SA 818 — 2SA 819 2SA 2SA 2SA 2SA 820 821 822 823 ^ 2SA 824 2SA 825 2SA 826 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 827 828 829 830 — 831 832 ^ 833 834 2SA 8 3 5 2SA 836-'' 2SA 837 2SA 838 2SA 839,*— 2SA 840 ^ 2SA 8412SA 842 2SA 843
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2sa13582sa9852sb6472sa794+132sb10852sa9842sa8172sa7772sa12842sa10152sa7332sa847a2sa9682sa9332sa8232sa9702sa935
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