2SC231 Search Results

2SC2319

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2319 Unit in mm HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. FEATURES : . Hide Band and High Gain for Class A Amplifier. . Excellent Cross Modulation Characteristics. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING

2sa1032

Abstract: 2SA1031 Hitachi DSA002754
Contextual Info: 2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 LG and 2SC2310 Outline 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage

Vce-12V

Abstract: 2SC2310 ta7200
Contextual Info: ST 2SC2310 NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier . The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sc458

Abstract: 2SC458 datasheet 2SC2310 2SA1031 2SA1032 Hitachi DSA00396
Contextual Info: 2SC458 LG , 2SC2310 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC2314 TRANSISTOR NPN TO – 126 FEATURES z Transceiver Driver Applications 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

2SA1032

Abstract: 2SA1031 2SC2310 2sC2310 y
Contextual Info: HITACHI 2SA1031, 2SA1032 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER Complementary pair with 2SC458 LG and 2SC2310 riW « i Q.WUuJ § «.»My p 1, Emiiier . it * . ar 2. i Colica« J. B»ït (Dimensioni in mm) I èp h Vi 5i V I —J ji ? (JEDEC TO-92)

2SC2312

Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Contextual Info: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating

2sc2314

Abstract: AL210
Contextual Info: O rdering nu m be r: EN485F F 2SC2314 N0.485F i NPN Epitaxial Planar Silicon Transistor 27MIIz CB Transceiver Driver Applications unit 75 V 75 V 45 V 5 V 1.0 A 1.5 A 750 mW Tc = 25°C 5 W 150 °C -5 5 to +150 °C min typ max unit 1.0 pA Vcb = 40V,Ie = 0 Veb = 4V,Ic “ 0

2SC1006

Abstract: 2SC1885 2SC3359 2SC710 2sd1944 2SC1957 2sc1815 2SC2320 2SC763 2SC2550
Contextual Info: - m - a S £ T y p e No. « Manuf. * = S A NYO 3E ^ T O SHIBA * 2SC 1973 fé T 2SC2314 * 2SC 1974 ✓ T T T T T ZSC2078 2SC2075 2SC2078 2SC1678 2SC 1980 fé *2 fé fé fé 2SC 1981 V - — ?sn9R5n * 2SC 1975 ^ * 2SC 1976 * 2SC 1977 * * * m. NEC tL HITACHI

2SC2314

Abstract: transistor 2sc2314 2sc2314 transistor DSA0027023
Contextual Info: Ordering number:EN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B [2SC2314] 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C

2SC2318

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2318 Unit in mm HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. 09.39 MAX . 08.45 MAX . FEATURES : . Wide Band and High Gain for Class A Amplifier. . Excellent Cross Modulation Characteristics. . All Electrodes Insulated from Case.

2SC458

Abstract: 2sc2310 Hitachi DSA002755 2SC458 B
Contextual Info: 2SC458 LG , 2SC2310 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SA1031 and 2SA1032 Outline 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage

2SD1651

Abstract: 2SD1398 LA7577 2SD1887 2sc3997 2sd1649 2SC3595 2SC3502
Contextual Info: Color TV Block D i a g r a m 14”~ 4 0 ” (Line SAHYO Operate) •^•Horizontal Output VIF, SIF LA7577 2SC2314 2 SAI 011 Without Damper Diode With Damper Diode — 14" 16" ~ (2SD1649) (2SD1876) 18" ©(2SD1882) 2SD1397 (2SD1650) ©(2SD1877) ©(2SD1883)

2SC2310

Abstract: 2sc458 2sc458 transistor Hitachi DSA0076 ADE-208-1044A 2sC458 datasheet
Contextual Info: 2SC458 LG , 2SC2310 Silicon NPN Epitaxial ADE-208-1044A (Z) 2nd. Edition Mar. 2001 Application • Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

2SC2310

Contextual Info: ST 2SC2310 NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier . The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

ta7200

Abstract: 2SC2310 transistor 2sc2310
Contextual Info: ST 2SC2310 NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier . The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

nec 2401

Abstract: nec 2405 NEC 2415 nec 2412 2SC2509 2SC2320 2SC1218 2sc2312 2SC2724 2SC2508
Contextual Info: - tt - 2SC 2388A 2SC 2389 ^ 2SC 2 3 9 0 ^ 2SC 2391 2SC 2392 s a *±a □— A □— A 2SC3040 2SC2Û75 2SD743 £ 2SC2562 2SC2634 2SD812 2SC1645 2SC3802K 2SC2619 2SC3124 2SC2755 2SC2812 2SC3324 2SC1622A 2SC2462 2SC241 2 K L N 2SC2312 2SC3324 2SC1622A 2SC2463

2SC2310

Abstract: 2sc458 2SC458A 2SC458C 2SA1031 2SA1032 2SC458CLG C45S 2sc2310h "2SC458"
Contextual Info: HITACHI 2SC458 LG , 2SC2310 SILICON NPN EPITAXIAL LOW FREQUENCY LO W NOISE AMPLIFIER Com plem entary pair with 2SA1031 and 2SA1032 no 1. limitier 2. Collector 3. h .i*c Dimensions in mm I A B S O L U T E MAXIMUM R A T IN G S (Ta=25°C) Item Symbol M AXIM UM C O L L E C T O R D ISSIP A T IO N

2SC2314

Abstract: 2sc2314F ITR05122 ITR05118 ITR05119 ITR05120 ITR05121 2sc2314 transistor
Contextual Info: Ordering number:ENN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B [2SC2314] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6 0.8 0.8 0.6 15.5 0.5 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126

2SA1032

Abstract: 2SA1031 Hitachi DSA0097 2SC2310 2SC458
Contextual Info: 2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 LG and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item

2SC2310

Abstract: VCe-12V transistor 2sc2310 ta7200
Contextual Info: ST 2SC2310 NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier . The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2577 sanken

Abstract: 2SC1619A SANKEN 2S0371 IOC3180 S1350 MJ041C 2S0334 2SC1445 2sc1030 hitachi IC-3180
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 151-08SPC 2SC2577 B0243B B0295 B0295 2SCllll 2SCllll 2SC1445 ~~g~~~g 25 30 35 40 2SC1030 152-08SPC 2S0371 2S0334 S1350 2SC1986 2SC2485 IOC3180 2:iC3180 2SC1664A 2SC2316 2S084 2S0613 . 2S0613 2S0613 2S0613P

2sc2314

Abstract: 2sc2314 transistor EN485F as 2009a transistor 2sc2314 27mhz transistor
Contextual Info: Ordering nu m b er: EN485F 2SC2314" NPN Epitaxial Planar Silicon Transistor CB Transceiver Driver Applications A bsolute M axim um R atin g s at Ta = 25°C Collector-to-Base Voltage V cbo Collector-to-Emitter Voltage V cer Collcctor-toJ3mitter Voltage VcEO

Contextual Info: TOSHIBA íDISCRETE/OPTOD- 9097250 TOSHIBA DE I ^ D T V a S D 0QD7S50 3 <DI SC R E T E /O P T O 2SC2318 SILICON NPN EPITA X IA L PLANAR TYPE Unit in mm HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. 0 & 3 9 M A X , 0a45MAX. FEATURES.: . Wide Band and High Gain for Class A Amplifier.