2SC2634 Search Results

2SA1127

Abstract: 2SC2634 SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open)

transistor 2sc2634

Abstract: 2SA1127 2SC2634
Contextual Info: Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 5.0±0.2 4.0±0.2 Low noise voltage NV. High foward current transfer ratio hFE. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE

UPA75HA

Abstract: 2SC2602 2SC2611B 2SC2650 2SC2601 2sc2335 2SC2534 2SC2625 upa75 2SC3082K
Contextual Info: - 142 - £ m € a T yp e No. «5 T 2SC 2591 « 2SC 2592 M anuf. T 2SC 2595 «i T 2SC 2596 T i* = SANYO 3K *£ TO SH IBA h 2SC 2605 w 2SC 2SC 2SC r 2SC1657 /' i B B 2SC 2620 ✓ im 2SC 2621 / ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL •ti 2SC 2618 A 2SC2634

2SC1815

Abstract: 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458
Contextual Info: - 10 2 - £ tt € Manuf. 2SC 944$ a « 2SC 945 / s n 2SC 947 ^ T 2SC 948 ^ te T m Type No. * * * h SANYO * M B TOSHIBA S NEC B ÍL HITACHI 2SC1907 2SC1215 2SC2926 2SC458 2SC2634 2SC2410 2SC828 2SC387A %rBM 2SC1959 2SC945 2SC454 WrB m 2SU»4ö 2SC454 *

2SA1127

Abstract: 2SC2634
Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 5.1±0.2 ● Low noise characteristics. High foward current transfer ratio hFE. 0.7±0.2 ● • Absolute Maximum Ratings

2SA1127

Abstract: Low-Frequency Low-Noise PNP transistor 2SC2634 2SC263
Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 Low noise characteristics. High foward current transfer ratio hFE. • Absolute Maximum Ratings Ta=25˚C Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Symbol Rating

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1127 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2

2SA1127

Abstract: 2SC2634
Contextual Info: Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 5.0±0.2 Low noise voltage NV. High foward current transfer ratio hFE. • Absolute Maximum Ratings Ta=25˚C Parameter Symbol

2SA1127

Abstract: 2SC2634 SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1127 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 4.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE

nec 2401

Abstract: nec 2405 NEC 2415 nec 2412 2SC2509 2SC2320 2SC1218 2sc2312 2SC2724 2SC2508
Contextual Info: - tt - 2SC 2388A 2SC 2389 ^ 2SC 2 3 9 0 ^ 2SC 2391 2SC 2392 s a *±a □— A □— A 2SC3040 2SC2Û75 2SD743 £ 2SC2562 2SC2634 2SD812 2SC1645 2SC3802K 2SC2619 2SC3124 2SC2755 2SC2812 2SC3324 2SC1622A 2SC2462 2SC241 2 K L N 2SC2312 2SC3324 2SC1622A 2SC2463

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE

transistor 2sc2634

Abstract: 2SA1127 2SC2634
Contextual Info: Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 5.0±0.2 Low noise voltage NV. High foward current transfer ratio hFE. • Absolute Maximum Ratings Ta=25˚C Parameter Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1127 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE

2SA1127

Abstract: 2SC2634 SC-43A
Contextual Info: Transistors 2SA1127 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE 0.7±0.2 • Features 12.9±0.5

2SA1127

Abstract: 2SC2634 SC-43A
Contextual Info: Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE 0.7±0.2 • Features 12.9±0.5

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
Contextual Info: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930

2SC144

Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
Contextual Info: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845

2SC2291

Abstract: 2SC1740 R 2SC458LG B 2SC945 2SC1345 2sc458 2SC2412K 2SC458lg 2SC4453 2SC1685
Contextual Info: - S € Type No. 2SC 1619A tt € Manuf. 2SC 1620 2SC 1621 2SC 1622 2 SC 1622A 2SC 2SC 2SC 2SC 2SC 1623 1624 1625 1626 1627 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1627A 1628 1629 ^ 1630 1631 1632 1633 1634 1635 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1636 ^ 1637 ^ 1638

2sc710

Abstract: 2sc1741 2SC366 2SC380 2sc944 2sC1674 2SC4641 2SC1815 2SC3393 2SC931
Contextual Info: - m € Type No. SANYO 2SC4641 S RH* •$. SIS* B t z i - H i ä drÜ 2SC3393 2SC3393 2SC4455 917 918 920 H 15 2SC2839 2SC 921 * 2SC 922 f 2SC 923 b B B B V m w. m. S «E -— 2SC2999 2SC2999 2SC4641 = H H * ;¥ # = = H ;¥ m n * 2SC 931 • 2SC 932 ^ 2SC 933 f-

C2482

Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Contextual Info: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC