2SC1741 Search Results

2SA854S

Abstract: 2SC1741S SC-72 T146
Contextual Info: 2SA854S Transistors Medium Power Transistor -32V, -0.5A 2SA854S zExternal dimensions (Unit : mm) zFeatures 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Idea for low-voltage operation. 3) Complements the 2SC1741S. 2SA854S 4 ±0.2 (15Min.) 3Min. 3 ±0.2 2 ± 0.2

Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K/2SC4097/2SC1741S •F e a tu re s 1) High IcMax. IcMax. = 0.5mA 2) Low VcE(sat). O ptim al fo r low v o lt­ age operation. 3) Complements the 2SA1036K/2SA1577 / 2SA854S. •E x te rn a l dimensions (Units: mm)

2SC1741AS

Abstract: 2SC1741
Contextual Info: 2SC1741 AS Transistor, NPN Features Dimensions Units : mm • a v a ila b le in S P T (S C -7 2 ) p a c k a g e • s u ita b le fo r h ig h v o lta g e a n d la rg e c u rre n t o p e ra tio n : V CEO = 50 V, lc = 500 m A • lo w c o lle c to r s a tu ra tio n v o lta g e ,

2SC1741A

Abstract: SMW300 TP2500
Contextual Info: S -? > v 7. $ /Transistors 2SC1741A/2SC1741 AS 2SC1 741 A a Z S v l 741 AS wmjm * NPN y U = l> V ÿ / v W Epitaxial Planar NPN Silicon Transistors /Medium Power Amp. t t t t V T i W m s - T t e • ft* 1 V c e o = 50V, lc = 5 0 0 m A t « S E , 2) VcE sat)*'” 0 .1 V Typ. (at lc = 150m A ,

2SC1741A

Abstract: 2Sc1741
Contextual Info: h 7 > y ^ £ /Transistors 2SC1741A/2SC1741 AS 2SC1741A 2SC1741AS I 7 ° l s - m NPN y ' j 3 > /Medium Power Amp. Epitaxial Planar NPN Silicon Transistors • £ 1 - \|ii[§ ]/D im e n s io n s Unit : mm 1 )V ceo —50V, lc= 5 0 0 m A t raiHEE, L T h -7

2SC1741

Abstract: lem lt 100 p 2SA854 mge 500 2SA854 Q ra-100 2SA854S 2SC1741S 2SC1741P
Contextual Info: ROHM CO LTD ~ MDE D DÜOSbti3 5 B1RHM h 7 > v ^ ^ /Transistors 2 S C 1 7 4 1 Z S d 7 4 1 2SC1741 /2SC1741S . ' 7-27-cft x e ^ v T ^ u y i'- ^ N P N S Epitaxial Planar N P N Silicon Transistors • # J f i ,? j 'i£ li] / 'D im e n s iö n s U n i t : m m

2514

Abstract: 471 npn 727 diode 9444 2SC1741S
Contextual Info: SPICE PARAMETER 2SC1741S by ROHM TR Div. * 2SC1741S NPN BJT model * Date: 2006/12/06 .MODEL 2SC1741S NPN + IS=5.0000E-12 + BF=207.37 + VAF=29.450 + IKF=2.2170 + ISE=5.0000E-12 + NE=1.5942 + BR=10.471 + VAR=100 + IKR=.25712 + ISC=10.569E-12 + NC=1.2514 + NK=.94449

Contextual Info: 2SC1741 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.390 h(FE) Max. Current gain.

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

2SA1576UB

Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
Contextual Info: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.

transistor 1301

Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2 S C 2 4 1 1 K /2 S C 4 0 9 7 /2 S C 1 7 4 1 S •F e a tu re s 1 ) H ig h »External dimensions (Units: mm) ICMax. IcMw. = 0.5mA 2) Low VcE(sat). O ptim al fo r low vo lt­ age operation. 3) Complements the

A854S

Contextual Info: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S • F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) Large lc. Icmbx, — —500mA 2SA1577 2SA1036K 2) Low VcEisat). O p tim a l fo r lo w -v o ltage operation. 3) Com plem ents the 2SC 2411K/

2SC1957

Abstract: 2SC2407 2SC2101 2SC1943 2SC1914A 2SC1971 2sc2098 2SC2229 2SC2329 2SC3800
Contextual Info: - m « Type No. tt 2SC 1935 Ìd r ìl 2SC 1936 m ir i! 2SC 1937 ̱ il 2 SC 1938 «± a 2SC 1939 • ± il 2SC 1940 < •- a a 2SC 194 ^ b a a sl 2SC 1942 % Manuf. — 2SC 1943 SANYO M £ TOSHIBA H * tSO 1945,. 3 « 2SC2909 tenonin ù O K /ùJIV Jx 2SC1658

2SC2482

Abstract: 2SC2283 k 3496 2SC3393 2sc2562 2SC3112 2SC3124 2SC945 2sc2785 h 2SD1431
Contextual Info: - 164 - m € T y p e No. it £ Manuf. ft = SANYO M *£ TO S HIBA 1e NEC HITACHI tL * ± a F U J ITSU fé T MATSUSHITA ft 2SD1433 2SC2482 2SC3478 2SD1610 2SC2632 2SC3269 H ft ft 2SC2482 2SC3209 2SC4743 2 SC1573A 2SC3269 h n * 2SC 3467 ' = * 2SC 3468 * 2SC 3469

2SC2320

Abstract: 2SD786 2SC4280 2sc1832 2sc738 2SC1818 2SC 1827 F 2SD1203 2SC1831 2sc2631
Contextual Info: - VH - m. « tt Type No. 2SC 1818 S 'fé S « Manuf. SANYO $ T O SHIBA 2SD425 T X NEC T 2SC 1820 s±a 2SC2329 2SC 1822 2SC2082 2SC 1823 S±ü §±® 2SC 1824 *±a 2SC 1825 2SC 1826 ıil o' y-yry 2SC 1827 »*'' 2SC 1828 ¥> 2SC 1829 ^ 2SC 1830 *' 2SC 1831

2SC1681

Abstract: 2SC1044 2SC2634 2SC1914A 2SC871 2SC879 2sc1741 2sc2061 2SC1842 2SC503
Contextual Info: tt s £ Type No. £ Manuf. SANYO m n = TOSHIBA NEC * 2SC 848 JTtìl 2SC4641 2SC941 * 2SC 849 •±ii 2SD734 2SC367 G * 2SC 850 ±jS 2SD734 2SC503 * 2SC 851 * 2SC 852 * 2SC 853 ^ * 2 SO 854 * 2SC 855 * 2SC 856 ^ m b m a w 8x3 •drii S ÍZ * * 2SC 857 .

2sd4242

Abstract: 2SD424 TOSHIBA 2SD424 181v 2SC387A toshiba 2sd424 2SC2320 2SC2078 2SC641 sc 1815
Contextual Info: - £ m * * * 2SC 1780 2SC 1781 H 2SC 1782^ * 2SC 1783 2SC 1784 2SC * 2SC * 2SC * 2SC 1785^ 1786 " 1787 1788 - * 2SC 1788A 2SC 1789 *, * 2SC 1790 * 2SC 1791 * 2SC 1792 % 2SG 1801 * 2SC 1802 2SC * 2SC * 2SC * 2SC * 2SC 2SC * 2SC * 2SC * 2SC * € = 1803 1804

2SC1702

Abstract: 2SC1704 2SC1708 2SC1710 2SC1705 2SA850 equivalent 2SC1737 2sc1735 2SC1768 2SC1750
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) 2SC1701 2SC1702 2SC1703 2SC1704 2SC1705 2SC1706 2SC1707 2SC1707A 2SC1708 2SC1708A 2SC1709 (V) (mA) (mW) Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* VCE Ic (ºC) (MHz)

Contextual Info: ROHM CO LT» MOE 7 0 S f i cl cH » □ □ □ S 3 ci 4 f ' 7 > y X $ / T ransistors IRHfl 4 2SA854/2SA854S 7 ^ 2 7 -0 9 2SÄ354 0€£ K>1 Z ö M ö 5 4 « X t f ^ d e v y ; U 7 ° U - ^ P N P v U 3 > h 7 > v X $ Power Amp. Epitaxial Planar PNP Silicon Transistors

2SC2675

Abstract: 2SD786 2SC3359 2SA1137 2SC2808 2SB737 J0801 2SA1515 2SA934 2SB1041
Contextual Info: RO H M CORP cnT deT J ? f l a f l cn ci D O D iis a s f D m ^iliaS ífitii iiiii iSnrtrtfinrhfc r " 1 • TO-92, SPT Types ' Function * New Products A. Maintenance part. Low Noise Amp Chroma Darlington Driver • - Cob pF 4.0 — 6.5 6.5 4.0 4.0 4.0 4.0

Contextual Info: MODEL: CSQ-RP-E date 04/24/2012 page 1 of 3 DESCRIPTION: MAGNETIC BUZZER FEATURES • side port • SPL 85 dB • low profile RoHS SPECIFICATIONS parameter conditions/description min rated voltage max 1.5 operating voltage current consumption 1.0 at rated voltage, 2,730 Hz square wave, ½ duty

Contextual Info: MODEL: CST-951RP-A date 04/24/2012 page 1 of 3 DESCRIPTION: MAGNETIC BUZZER FEATURES • side port • SPL 85 dB • low profile RoHS SPECIFICATIONS parameter conditions/description min rated voltage typ max 5.0 operating voltage current consumption 4.0 at rated voltage, 2,730 Hz square wave, ½ duty

PN3906 TRANSISTOR PNP

Abstract: 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A
Contextual Info: m - Transistors RCHV s the leaclng volume manufacturer of surface mount small slgnal transistors These transistors help to reduce size and increase performance of a variety of devices of any kind :c i?"^ PNP SMTYSST3 UMT3 EMT3 t>l- NPN PNP NPN PNP EMT3"' SPT/TO-92

2SA series

Abstract: 2SC1740S TO-92
Contextual Info: Bipolar transistors-2SA series TO-92 and SPT summary Table 3 TO-92 and SPT general use transistors Package Appli­ cation Ir- ^C max RC V CEO *V CES (V ) (mA) 2SA933AS -5 0 -1 5 0 300 2SC1740S 50 150 2SC2389S 120 2SA854S SPT T O -9 2 (mW ) h FE h FE ranking