2SD1949 Search Results

2SD1959

Abstract: 2SB1301 2SD1951 2SD1941 2sd1944 2SD1948 2SD1940 2SD1943 2SD1946 2SD1947
Contextual Info: - 274 - m. 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD1949 2SD1950 2SD1951 2SD1952 2SD1953 2SD1955 2SD1956 z&umï 2SD1958 2SD1959 2SD1961 2SD1962M 2SD1964 2SD197Q 2SD1971 2SD1972 2SD1974 2SD1975 2SD1976 2SD1977 2SD1978 2SD1979 2SD1981 2SD1983

Contextual Info: 2SD1949 / 2SD1484K Transistors Medium Power Transistor 50V,0.5A 2SD1949 / 2SD1484K Features 1) High current.(IC=5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Absolute maximum rationgs (Ta=25 C) Symbol VCBO Limits Unit 50

Contextual Info: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors I M edium Pow er T ran sistor 50V, 0.5A 2S D 1949 / 2SD1484K / 2SC 1741 AS • F eatu res • A b s o l u t e m a x im u m r a tin g s (T a = *2 5 ÌD ) 1 ) High cu rre nt (Ic ^ O . S A ) 2 ) Low VcE{sat). (Typ. 0 .1 V at Ic /Ib = 150/15m A )

Contextual Info: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors Medium Power Transistor 50V, 0.5A I 2SD1949 / 2SD1484K / 2SC1741AS •Features •Absolute maximum ratinga (Ta=25t) 1 ) H ig h c u r r e n t , ( k — 0 .5 A ) 2 ) L o w V c e (w i >. ( T y p . 0 . 1 V Parameter

2SD1484K

Abstract: 2SD1949 T106 T146
Contextual Info: 2SD1949 / 2SD1484K Transistors Medium Power Transistor 50V,0.5A 2SD1949 / 2SD1484K Features 1) High current.(IC=5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Absolute maximum rationgs (Ta=25 C) Symbol VCBO Limits Unit 50

Contextual Info: Transistors IC SMD Type Product specification 2SD1949 Features High current. IC=5A Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: Data Sheet Medium Power Transistor 50V,0.5A 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) <SOT-323> (1) Emitter (2) Bace (3) Collector

2SC3359

Abstract: 2SC1741S 2SC3359S 2SD1484K 2SD1949
Contextual Info: Transistors 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S 96-678-D15 (SPEC-D16) 318 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SD1949

Abstract: 8086 BF 212 transistor datasheet tr 212 3818
Contextual Info: SPICE PARAMETER 2SD1949 by ROHM TR Div. * 2SD1949 NPN BJT model * Date: 2006/12/06 .MODEL 2SD1949 NPN + IS=43.522E-15 + BF=212.62 + VAF=100 + IKF=1.1384 + ISE=43.554E-15 + NE=1.4099 + BR=10.166 + VAR=100 + IKR=71.304E-3 + ISC=19.105E-12 + NC=1.8086 + NK=.87081

Contextual Info: Data Sheet Medium Power Transistor 50V,0.5A 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) <SOT-323> (1) Emitter (2) Bace (3) Collector

2SD1949

Abstract: R Y SMD TRANSISTOR
Contextual Info: Transistors IC SMD Type Medium Power Transistor 2SD1949 Features High current. IC=5A Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: h 7 > y ^ ^ / T ransistors 2SD1484K 2SD1949 2SD1484K/2SD1949 7 V f \ s —M Z - i W W b 7 $ - t - J l s K N PN y 'J is h y y y Z Z 4, ^ )iilllfflffl/Meclium Power Amp. 1 1 Epitaxial Planar Super/Ultra Mini-Mold NPN Silicon Transistors • ^H i5 ^ J "jtl3 /D im e n s io n s U n it: mm)

2SD1484K

Abstract: 2SD1949 T106 T107 T146 T147
Contextual Info: h -7 > y 7 * £ /Transistors 2SD1484K/2SD1949 2SD1484K 2SD1949 Epitaxial Planar NPN Silicon Transistor 4>Êt^*llÜ£i/Medium Power Amp. • Wfé'+ÌÉEI/Dimensions Unit : mm 2SD 1949 2SD1484K 2 .9 ± 0 .2 VcEO=50V, lc=500mA M IEJ 2) V c e (sat)^f‘(&'''o

2SD1949

Contextual Info: 2SD1949 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-323 A L * High current. IC=5A * Low saturation voltage, typically 3 B S Top View VCE(sat)=0.1V at IC / IB=150mA / 15mA 1 2 V G COLLECTOR C 3 1 BASE

2SD1949

Contextual Info: h -7 > y 7, $ / T ransistors 2SD1484K/2SD1949 Xfcf£df-V7^U:7V— ^-fffc NPN y ^ > h 7 > y ^ ^ Epitaxial Planar NPN Silicon Transistor ^ ^ ^ J iiÎiffl/M e d iu m Power Amp. 2SD1484K 2SD1949 • i't-JfévI'Ü /'Dimensions Unit : mm 2SD 1949 2SD 1484K 1) » « E f c i f l E i i f t C U T i ' S o

2Sc3359

Abstract: 2SC1741S 2SC3359S 2SD1484K 2SD1949
Contextual Info: Transistors 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S 96-678-D15 (SPEC-D16) 318

Contextual Info: Data Sheet Medium Power Transistor 50V,0.5A 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) <SOT-323> (1) Emitter (2) Bace (3) Collector

2SD1484K

Abstract: 2SD1949 T106 T146
Contextual Info: 2SD1949 / 2SD1484K Transistors Medium Power Transistor 50V,0.5A 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Absolute maximum rationgs (Ta=25 C) Symbol VCBO Limits Unit

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

Tr 2SA1576

Abstract: 2SC4649 2sb1051
Contextual Info: Tr T ransistürs • EM3, UMT, SMT SOT-23, SC-59 Type Type UM T — — 2SA1037KLN — — 2SA1455K — — 2SC2412KLN — — 2SC3722K 2SA1774 — 2SC4617 Vi I :)(V) •V,.^ Function EM3 SMT Low Noise lr (mA) Pc(mW)(Ta = 25"C) UMT, SMT EM3 hff V ce(V) Ir(mA)