B0808 Search Results
B0808 Price and Stock
FIBOX AB 080807Enclosure: multipurpose; X: 80mm; Y: 82mm; Z: 65mm; EURONORD; ABS |
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AB 080807 | 41 | 1 |
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AB 080807 | Bulk | 1 |
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FIBOX AB 080806Enclosure: multipurpose; X: 80mm; Y: 82mm; Z: 55mm; EURONORD; ABS |
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AB 080806 | 40 | 1 |
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Bopla B 080805 ABS 7024Enclosure: multipurpose; X: 80mm; Y: 89mm; Z: 47mm; BOCUBE; ABS |
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B 080805 ABS 7024 | 2 | 1 |
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Bopla B 080805 PC-V0 7024Enclosure: multipurpose; X: 80mm; Y: 89mm; Z: 47mm; BOCUBE; graphite |
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B 080805 PC-V0 7024 | 2 | 1 |
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Bopla B 080805 PC-V0 7035Enclosure: multipurpose; X: 80mm; Y: 89mm; Z: 47mm; BOCUBE; grey |
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B 080805 PC-V0 7035 | 1 | 1 |
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B0808 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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sot-23 MARKING CODE ZA
Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
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OCR Scan |
ot-23ot-89ot-143bzv49+11 | |
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Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion |
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ds707-00003-1v4-e | |
B0411
Abstract: b0401
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ds707-00002-4v0-emb9df126mb9df126pmc-gse2176-pin+6 | |
sitnContextual Info: Supertex inc. TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s |
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tn0610100pfdsfp-tn0610b080813+1 | |
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Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion |
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ds707-00003-1v2-e | |
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Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion |
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ds707-00002-1v08-e | |
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Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS707-00002-1v08-E Fujitsu Cortex R4 Family CMOS MB9DF126 Series Y MB9DF126 - ATLAS AR DESCRIPTION MB9DF126 series is based on Fujitsu’s advanced ARM architecture 32-bit with instruction pipeline for RISClike performance . Improvements compared to the previous generation include significantly improved performance at higher frequency, reduced power consumption and faster start-up time. |
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ds707-00002-1v08-emb9df12632-bit128mhz | |
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Contextual Info: Supertex inc. TN0606 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s |
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tn0606100pfdsfp-tn0606b080813 | |
18I sot 23 SMD IC 5pinContextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion |
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ds707-00004-1v0-e18i sot 23 smd ic 5pin | |
b0808Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, |
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tn0106dsfp-tn0106b080811b0808 | |
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Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces |
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tn0106dsfp-tn0106b080811 | |
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Contextual Info: Supertex inc. TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s |
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tn0620110pfdsfp-tn0620b080813 |