TN0620 Search Results

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Contextual Info: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: ^ Supertex inc. TN0620 TN0624 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V dss/ Order Number / Package b v dgs R ds<on max) W n) (min) VGS<th) (max) TO-39 TO-92 200V 6£i 1.0A 1.6V TN0620N2 TN0620N3 TN0620N5 TN0620ND

TN0620

Contextual Info: Supertex inc. TN0620 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN0620 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

TN0620

Contextual Info: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN0624N3

Abstract: CMOS 200V 5A TN0620 TN0620N3 TN0620N5 TN0624
Contextual Info: TN0620 TN0624 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 TO-220 200V 6.0Ω 1.0A 1.6V TN0620N3 TN0620N5 240V 6.0Ω 1.0A 1.6V TN0624N3

Contextual Info: TN0620 TN0624 - J l I f . z J r r : _ N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^D(ON) ^GS(th) b v dgs (max) (min) (max) TO-39 TO-92 200V 6Q 1.0A 1.6V TN0620N2 TN0620N3 TN0620N5 TN0620ND 240V

Contextual Info: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN0620 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BVDSS / ^D S ON I d (ON) ^G S(th) b v dgs (max) (min) (max) TO-92 TO-220 200V 6.0Î2 1.0A 1.6V TN0620N3 TN0620N5 t M IL visual screening available

TN0620

Abstract: TN0620N3 TN0620N5
Contextual Info: TN0620 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) 200V 6.0Ω 1.0A 1.6V Order Number / Package TO-92 TO-220 TN0620N3 TN0620N5 MIL visual screening available 7

TN0620

Abstract: TN0620N3
Contextual Info: TN0620 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package 200V 6.0Ω 1.0A 1.6V TN0620N3 TO-92 Features Low Threshold DMOS Technology ❏ Low threshold — 1.6V max.

Contextual Info: T N 06C Çf Supertex me- Low Threshold / p \ N-Channel Enhancement-Mode M à / Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ t Order Number / Package ' d ON) ^G SIth) BVDGs (max) (min) (max) TO-39 TO-92 200V 6n 1.0A 1.6V TN0620N2

TN0620N3

Contextual Info: TN0620 TN0624 S u p e r t e x in c . _ Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ BVqqs R d S ON ^D(ON) ^GStth) (max) (min) (max) TO-92 TO-220 200V 6.0Q 1.0A 1.6V TN0620N3

TN0620

Contextual Info: TN0620 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN0620 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance (110pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

TN0620N3

Abstract: tn0620n2 TN0624N2 TN0620 TN0624N3 TN0624N5 TN0620N5 TN0620ND TN0624 TN0624ND
Contextual Info: TN0620 TN0624 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 Order Number / Package TO-92 200V 6Ω 1.0A 1.6V TN0620N2 TN0620N3 TN0620N5 TN0620ND 240V 6Ω 1.0A

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

logic pulser specifications

Abstract: VP1306N3 logic pulser
Contextual Info: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.

TN0102N3

Abstract: VN1304N3 logic pulser specifications VP1304N3 TN0620N3 TP0102N3 TP0620N3
Contextual Info: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TN2524

Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178