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2N6660 Datasheets (40)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N6660	Defense Supply Center Columbus	N-Channel FET	Original	PDF	74.83KB	17
2N6660	Microchip Technology	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 0.41A TO39-3	Original	PDF	463.61KB
2N6660	Motorola	FET Transistor, N Channel Enhancment Mode TMOS Power Field Effect Transistor	Original	PDF	480.95KB	4
2N6660	Unknown	N-channel, High Frequency Power Transistor	Original	PDF	74.84KB	17
2N6660	Philips Semiconductors	N-Channel Vertical DMOS Transistor	Original	PDF	63.46KB	3
2N6660	Supertex	Metal oxide N-channel FET, Enhancement Type	Original	PDF	27.62KB	2
2N6660	Supertex	N-Channel Enhancement-Mode Vertical DMOS FETs	Original	PDF	17.05KB	2
2N6660	Vishay Siliconix	N-Channel Enhancement-Mode MOSFET Transistors	Original	PDF	89.57KB	4
2N6660	Vishay Telefunken	TRANS MOSFET N-CH 60V 1.1A 3TO-205AD	Original	PDF	50.81KB	4
2N6660	General Electric	Power Transistor Data Book 1985	Scan	PDF	103.39KB	2
2N6660	Intersil	Data Book 1981	Scan	PDF	92.08KB	2
2N6660	Motorola	Switchmode Datasheet	Scan	PDF	41.76KB	1
2N6660	Motorola	European Master Selection Guide 1986	Scan	PDF	59.59KB	1
2N6660	Motorola	TMOS SWITCHING FET TRANSISTORS	Scan	PDF	448.89KB	3

2N6660	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	40.72KB	1
2N6660	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	83.37KB	1
2N6660	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	162.45KB	1
2N6660	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	36.06KB	1
2N6660	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	121.55KB	1
2N6660	Unknown	FET Data Book	Scan	PDF	118.04KB	2

2N6660 Price and Stock

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Microchip Technology Inc 2N6660 Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	2N6660		190		5	1 - 10 $22.20 100 $22.20 1000 $22.20 10000 $22.20	Buy Now
	2N6660		1		1	1 $17.96 10 $17.96 100 $17.96 1000 $17.96 10000 $17.96	Buy Now
Avnet Americas	2N6660	Bag		5 Weeks	500	1 - 10 - 100 - 1000 $14.40 10000 $13.86	Buy Now
Mouser Electronics	2N6660		1,093			1 $15.90 10 $15.90 100 $14.04 1000 $14.04 10000 $14.04	Buy Now
Arrow Electronics	2N6660		1	5 Weeks	1	1 $14.33 10 $14.33 100 $14.33 1000 $14.33 10000 $14.33	Buy Now
Newark	2N6660	Bulk			500	1 - 10 - 100 - 1000 $14.04 10000 $14.04	Buy Now

RS	2N6660	Bulk		6 Weeks	500	1 - 10 - 100 - 1000 $16.85 10000 $16.85	Get Quote
Microchip Technology Inc	2N6660	Bag	350	5 Weeks		1 $15.90 10 $15.90 100 $13.20 1000 $12.13 10000 $11.54	Buy Now
Future Electronics	2N6660	Bulk		5 Weeks	500	1 - 10 $14.46 100 $13.98 1000 $13.98 10000 $13.98	Buy Now
Onlinecomponents.com	2N6660		192			1 - 10 $15.86 100 $14.20 1000 $13.94 10000 $13.94	Buy Now
Avnet Silica	2N6660			7 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	2N6660			6 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	2N6660		192			1 - 10 $15.86 100 $14.20 1000 $13.94 10000 $13.94	Buy Now
VPT Components JANTX2N6660 - Bulk (Alt: JANTX2N6660)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	JANTX2N6660	Bulk		6 Weeks	10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	JANTX2N6660	Waffle			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
VPT Components JAN2N6660 - Bulk (Alt: JAN2N6660)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	JAN2N6660	Bulk		16 Weeks	13	1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Jersey Semiconductor 2N6660 Trans MOSFET N-CH 60V 1.1A 3-Pin TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics ()	2N6660		2,029		1	1 $9.28 10 $7.42 100 $6.50 1000 $6.03 10000 $6.03	Buy Now
	2N6660		1		1	1 $16.00 10 $16.00 100 $16.00 1000 $16.00 10000 $16.00	Buy Now
American Semiconductor, Inc 2N6660 Trans MOSFET N-CH 60V 1.1A 3-Pin TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N6660		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2N6660 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N6660 Abstract: s0437 2N6660 siliconix VQ1004J Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5	OCR Scan	2n6660 vq1004j/p s-04379--16-jul-01 +3s0437 2n6660 siliconix vq1004j	PDF
2N6661 Abstract: 2N6660 2N6661 transistor 2N6659 max 1988 Contextual Info: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.	OCR Scan	2n6659 2n6660 2n6661 t-39-05 +22n6661 transistor max 1988	PDF
2N6660 JANTX Contextual Info: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS	Original	2n6660jan/jantx/jantxv 2n6659/2n6660 vq1004j/p vndq06 +3p-37515--rev 04-jul-94 2n6660 jantx	PDF
2N6660 Contextual Info: 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing	Original	2n6660 dspd-3to39n2 a070808 dsfp-2n6660 +1a072808	PDF
2N6155 Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64 Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	sss6n60 o-220 8ss89 bss92 +158ss100 o-220ab buz171 o-220ftb irf120 to-204aa 2n6155 buz23 siemens siemens ni 1000 4900 siemens buz10 buz54 buz11 buz24 buz64	PDF
4900 SIEMENS Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	sss6n60 o-220 8ss89 bss92 +138ss100 t0-204aa 2n6659 o-205af 2n6660 4900 siemens 2n6155 buz211 buz54 buz11 buz24 buz74a siemens buz41a	PDF
TN2524 Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110 Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)	Original	2n6660 2n6661 2n7000 2n7002 +8ot-23 2n7008 tn0104 tn0106 tn0110 vn2406 tn2524 sot-89 n2	PDF
Contextual Info: m 2N6660 \ \ MOS N-CHANNEL TRANSISTOR DESCRIPTION: The 2N6660 is an N-Channel Enhancement-Mode MOS Transistor for General Purpose Switching Applications. MAXIMUM RATINGS A @ Tc = 25 °C 800 m A @ T c = 100 °C VDs= 60 V VGS = ±20 V 6.25 W @ 25 °C 2.5 W @ 100 °C	OCR Scan	2n6660	PDF
2N6660 Abstract: LE17 Contextual Info: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS ON = 3.0Ω • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available	Original	2n6660 725mw 25ent o-205ad +1le17	PDF
2N6660CSM4 Contextual Info: 2N6660CSM4 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 rad. (0.009) 3 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005)	Original	2n6660csm4 mo-041ba	PDF
Contextual Info: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS	Original	2n6660jan/jantx/jantxv 2n6659/2n6660 vq1004j/p vndq06 +2p-37515--rev 04-jul-94	PDF
Contextual Info: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS ON = 3.01 • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available	Original	2n6660 40mw/ment o-205ad	PDF
2N6660 Abstract: 2N6661 MPF6660 2N6659 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711 Contextual Info: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, highspeed power switching applications such as switching power supplies, ,CMOS logic, microprocessor or ~L-to-tiigh	Original	2n6659 mpf6659 2n6660 mpf6660 +112n6661 mpf6661 2n66591mpf6659 2n6660/2n6661 mpf6660/mpf6661 o-205ad mps 0737 2n6660 motorola motorola to205ad 2n6661 transistor mps 0711	PDF
Contextual Info: 2N6660+JAN Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)6.25 Minimum Operating Temp (øC)	Original	2n6660	PDF

2N6660X Contextual Info: 2N6660X MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES • Switching Regulators 0.89 max. (0.035) • Converters	Original	2n6660x	PDF
2N6660 Abstract: 2N6660-1 Contextual Info: 2N6660 Die Speciﬁcation Pad Layout 1 0,0 2 Backside: Drain Die Speciﬁcations Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N6660 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain	Original	2n6660 a022009 2n6660-1	PDF
2N6660 Contextual Info: 2N6660 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor TO-39 TO-205AD PRODUCT SUMMARY -sr V (B R )D S S (V) 60 3 >D (A) 1.1 1 SOURCE 2 GATE 3 & CASE-DRAIN n ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYMBOL LIMITS UNITS Drain-Source Voltage	OCR Scan	2n6660 o-205ad 9500/547a	PDF
JANTX2N6660 Abstract: JANTXV2N6660 Contextual Info: 2N6660JAN/JANTX/JANTXV_ VISHAY Vishay Siliconix JAN Qualified N-Channel 60-V D-S MOSFETs PRODUCT SUM MARY V (BR)DSS M i n ( V ) r DS(on) M a x ( Q ) v G S(th) ( V ) I d (A ) 60 3 e v G S= 10 V 0.8 to 2 0.99 FEATURES BENEFITS APPLICATIO NS	OCR Scan	2n6660jan/jantx/jantxv_2n6659/2n6660 vq1004j/p vndq06 +4s-04279--16-jul-01 jantx2n6660 jantxv2n6660	PDF
1004J Abstract: 2N6659 M 1004j Contextual Info: Tem ic 2N6659/2N6660, VQ1004J/P_ suimnix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber V BR DSS M in (V) rDS(on) M ax (Q) v GS(th) (V) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ V(-js = 10 V 0.8 to 2 1.1	OCR Scan	2n6659/2n6660 vq1004j/p_2n6659 2n6660 +4vq1004j/p p-37994--1004j m 1004j	PDF
Contextual Info: 2N6660 2N6661 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON I d (ON) b v dgs (max) (min) TO-39 60V 3 .0 ÌÌ 1.5A 2N 6660 90V 4 .0 ÌÌ 1.5A 2N6661 Advanced DMOS Technology High Reliability Devices	OCR Scan	2n6660 2n6661	PDF
2N6660 Abstract: 2N6661 TC5205 Contextual Info: [FIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. 2N6660,1 1.2 AMPERES 60, 90 VOLTS RPS ON = 3.0 n	OCR Scan	2n6660 2n6661 tc5205	PDF
2n6660 Contextual Info: 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing	Original	2n6660 dsfp-2n6660 a101207	PDF
Contextual Info: 2N6660CSM4 MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.0A RDS on 3.0 Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 3 4 1.02 ± 0.20 (0.04 ± 0.008) 2 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad. (0.009)	Original	2n6660csm4 mo-041ba	PDF
2N6660 Abstract: 2N6661 Contextual Info: 2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 3.0Ω 1.5A 2N6660 90V 4.0Ω 1.5A 2N6661 TO-39 Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process	Original	2n6660 2n6661	PDF

2N6660 Search Results

2N6660 Datasheets (40)

2N6660 Price and Stock

Microchip Technology Inc 2N6660

VPT Components JANTX2N6660

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