TN0104 Search Results

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

Contextual Info: TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† 40V 1.8Ω 1.6V 2.0A TN0104N3 — TN0104ND 40V 2.0Ω 1.6V 2.0A —

Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN1L

Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: TN0104N2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)1.25 @Temp (øC)150õ IDM Max (@25øC Amb)2.9 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)3.5# Minimum Operating Temp (øC)-55

Contextual Info: TN0102 TN0104 m i' m fa m m m m m tid r m m » . j im h m m jd h M n d h • t 1 I i I I N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) BVdgs (max) (max) (min) TO-39 TO-92 TO-243AA*

Contextual Info: ^ Supertex inc. TN0102 TN0104 Low Threshold Ordering Information BVjjss ! If N-Channel Enhancement-Mode Vertical DMOS FETs Order Number / Package b v dgs RDS ON (max) ^GS<th) (max) TO-39 TO-92 TO-243AA* 20V 1.8Q 1.6V 2.0A TN0102N2 TN0102N3 — TN0102ND 40V

TN0104

Contextual Info: Supertex inc. TN0104 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0104 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

TN1L

Abstract: 125OC TN0104 TN0104N3-G TN0104N8-G A1117 fet sot-89 marking code
Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN1L

Abstract: tn1lw marking TN
Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN0102N2

Abstract: TN0102N3 MOS 20V 0.5A P024 TN0102 TN0102ND TN0104 TN0104N2 TN0104N3 TN0104N8
Contextual Info: TN0102 TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 TO-243AA* 20V 1.8Ω 1.6V 2.0A TN0102N2 TN0102N3 — TN0102ND 40V 1.8Ω

Contextual Info: TN0104N8 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)1.4 @Temp (øC)150õ IDM Max (@25øC Amb)2.9 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (øC)-55

TN0102

Abstract: TN0102N3 TN0104N2
Contextual Info: TN0102 TN0104 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V DSS/ R b v dgs 20V d S ON Order Number / Package V GS(th) Id (ON) (max) (max) (min) TO-39 TO-92 TO-243AA* 1.80 1.6V 2.0A TN0102N2 TN0102N3 —

TN0104

Contextual Info: TN0104 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0104 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

Contextual Info: TN0104N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)800m @Temp (øC)150õ IDM Max (@25øC Amb)2.4 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55

TN0104N2

Abstract: TN0104N3 TN0104N8 TN0104ND TN0102 TN0102N2 TN0102N3 TN0102ND TN0104 TO243AA
Contextual Info: TN0102 TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 TO-243AA* 20V 1.8Ω 1.6V 2.0A TN0102N2 TN0102N3 — TN0102ND 40V 1.8Ω

TN1L

Abstract: TN0104 TN0104N3 TN0104N8 TN0104ND
Contextual Info: TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† 40V 1.8Ω 1.6V 2.0A TN0104N3 — TN0104ND 40V 2.0Ω 1.6V 2.0A —

TN0104N8-G

Abstract: marking nd sot-89 transistor TN1504ND TN1L TN0104 TN0104N3-G TN1504NW VF15 transistor MARKING CODE LAYOUT G SOT89 Diode SOT-89
Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown

Contextual Info: Gà Supertex ÏH TN0102 TN0104 |- _ Low Thresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss / ^D S O N V GS(th) ' d (ON) b v dgs (max) (max) (min) TO-39 TO-92 TO-243AA* 20V

P-DIP18P

Abstract: VQ300IP v020 AN0130NA ANO120 VQ2004P VQ2006J VQ2006P VQ3001J VQ7254P
Contextual Info: - ft X t m VQ2004P VQ2006J VQ2006P VG3001J VQ3001P VQ7254J VQ7254P AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA AP0116NA AP0120NA AP0130NA AP0132NA AP014QNA TC0604WG TN0102N2 TNQ102N3 TM0102ND TN0mK2 TN0104N3 TN0104ND TN0106N2 TNQ1Q6N3 TN0106ND TN0110N2 TN0110N3

Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown

TN1504ND

Abstract: TN1L TN1LW
Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown

TN1L

Abstract: TN1LW FET SOT-89 N-Channel jedec package TO-243AA FET SOT-89 125OC TN0104 TN0104N3-G TN0104N8-G siemens fet to92
Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

TN1L

Abstract: TN0104 TN0104N3 TN0104N8 TO-243AA TN1L V DATE CODE FOR SUPERTEX
Contextual Info: TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order Number / Package 40V 1.8Ω 1.6V 2.0A TN0104N3 40V 2.0Ω 1.6V 2.0A — * Same as SOT-89. TO-92 TO-243AA* —