A041309 Search Results

HV9919

Abstract: Marking code K7 Schottky Diode buck led driver
Contextual Info: HV9919 Hysteretic, Buck, High Brightness LED Driver with High-Side Current Sensing Features General Description ► ► ► ► ► ► ► ► ► The HV9919 is a PWM controller IC designed to drive high brightness LEDs using a buck topology. It operates from an

Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities

jedec package TO-236AB

Abstract: TS 100-12 VP2110 VP2110K1-G VP2110ND
Contextual Info: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

4012L

Abstract: 125OC VN4012 VN4012L-G
Contextual Info: VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

2406L

Abstract: VN2406
Contextual Info: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

Contextual Info: Supertex inc. HV7800 High Side Current Monitor 8.0 to 450V Voltage Gain of 1 Features General Description Applications This monitor IC features a very wide input voltage range, high accuracy of transfer ratio, small size, low component count, low power consumption, ease of use, and low cost. Offline,

MO-178

Abstract: DSPD-5SOT23K1
Contextual Info: Supertex inc. Package Outline 5-Lead SOT-23 Package Outline K1 2.90x1.60mm body, 1.45mm height (max), 0.95mm pitch D θ1 e1 5 E1 E Note 1 (Index Area D/2 x E1/2) 1 e L b L1 Top View L2 Gauge Plane θ Seating Plane View B View B A A A2 A1 Seating Plane Side View

Contextual Info: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Dual N-channel devices Low threshold – 2.0V max. High input impedance Low input capacitance – 125pF max. Fast switching speeds Low on-resistance Free from secondary breakdown

LND01K1-G

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

2410L

Abstract: VN2410
Contextual Info: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

SITN

Abstract: TN0110
Contextual Info: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

mark G1 SOT-23

Abstract: sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030
Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFETs. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener

QFN PACKAGE thermal resistance

Abstract: flyback led driver with pwm dimming 1N4148 HV861 HV861K7-G LPS4012 MO-220
Contextual Info: HV861 Dimmable, Low Noise, Dual EL Lamp Driver Features ► ► ► ► ► ► ► ► ► ► The device uses a single inductor and a minimum number of passive components. Using the internal reference voltage, the regulated output voltage is at a nominal value of 90V.

1206L

Abstract: VN1206
Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

SOT-23 MOSFET P-CHANNEL a1 1- mark

Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description ►► 300V breakdown voltage ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low input capacitance ►► Fast switching speeds

TP0604

Contextual Info: Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown

Contextual Info: Supertex inc. HV7801 High Side Current Monitor 8.0 to 450V Voltage Gain of 5 Features General Description ►► Supply voltage 8V to 450V ►► Voltage output device ►► Typical gain 5.0±1% ►► Max VSENSE 500mV ►► Fast rise and fall time, 700ns to 2.0µs

SOT-23 MOSFET P-CHANNEL a1 1- mark

Abstract: L21e
Contextual Info: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener

Contextual Info: Supertex inc. DN1509 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description This low threshold, depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well

Contextual Info: VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities

Contextual Info: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-to-drain diode High input impedance and high gain

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement