TN0110 Search Results

Contextual Info: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: ^ Superte x inc. TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package b v dcs R ds on (m ax) (m in) VGS(th) (max) TO-39 TO-92 DICE* 60V 3ß 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Q

TN0110

Contextual Info: Supertex inc. TN0110 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0110 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

SiTN

Contextual Info: Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold - 2.0V max. High input impedance Low input capacitance - 50pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS/ RDS ON ID(ON) VGS(TH) BVDGS (max) (min) (max) 60V 3.0Ω 2A 2.0V TN0106 TN0106N3 TN0106N3-G 100V 3.0Ω 2A 2.0V TN0110 TN0110N3 TN0110N3-G Package Options

TN0106

Abstract: TN0106N3 TN0110 TN0110N3
Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package 60V 3.0Ω 2A 2.0V TN0106N3 100V 3.0Ω 2A 2.0V TN0110N3 TO-92 Features Low Threshold DMOS Technology

SITN

Abstract: TN0110
Contextual Info: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN0110N2

Contextual Info: _ TN0106 TN0110 _ Super tex inc. r . . . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BVpcs RpS ON (max) ' d(ON) (min) VgS(Mi ) (max) TO-39 TO-92 Diet 60V 3.on 2A 1.6V — TN0106N3 TN0106ND

Contextual Info: _ TN0106 TN0110 _ Super t e x inc. T, k N _ Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) ^G S(th) Order Num ber / Package b v dgs (max) (min) (max) TO-92

TN0110N2

Abstract: TN0106N2 TN0106 TN0106N3 TN0106ND TN0110 TN0110N3 TN0110ND
Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 DICE† 60V 3Ω 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Ω 2A 1.6V

TN0106

Abstract: TN0106N3 TN0110 TN0110N3 TN0110ND
Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 Die† 60V 3.0Ω 2A 2.0V TN0106N3 — 100V 3.0Ω 2A 2.0V TN0110N3 TN0110ND

TN0110N3-G

Abstract: TN0110 TN1510NW VF15
Contextual Info: Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

TN0110

Contextual Info: TN0110 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0110 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

P-DIP18P

Abstract: VQ300IP v020 AN0130NA ANO120 VQ2004P VQ2006J VQ2006P VQ3001J VQ7254P
Contextual Info: - ft X t m VQ2004P VQ2006J VQ2006P VG3001J VQ3001P VQ7254J VQ7254P AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA AP0116NA AP0120NA AP0130NA AP0132NA AP014QNA TC0604WG TN0102N2 TNQ102N3 TM0102ND TN0mK2 TN0104N3 TN0104ND TN0106N2 TNQ1Q6N3 TN0106ND TN0110N2 TN0110N3

Contextual Info: Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold - 2.0V max. High input impedance Low input capacitance - 50pF typical Fast switching speeds Low on-resistance

TN0106

Abstract: TN0106N3 TN0106ND TN0110 TN0110N2 TN0110N3 TN0110ND
Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 Die† 60V 3.0Ω 2A 1.6V — TN0106N3 TN0106ND 100V 3.0Ω 2A 1.6V

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

TN0106N3

Abstract: TN0106 SD1137BD SD1137 SD1137CHP TN0106ND TN0110 TN0110N3 TN0110ND TO226AA
Contextual Info: T OPAZ S E M I C O N D U C T O R GSE D | TGÖSaab OOQIDME S | T F f5 in = *U £ \ ^ s D ira? , m o im SEMICONDUCTOR_ ;_ TM 0110 N-CHANNEL ENHANCEMENT D-MOS POWER FETs T ' r > '* ’ ORDERING INFORMATION TO -226AA TO -92 Plastic Package Sorted Chips In Watfle Pack

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TN2524

Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is