TN0106 Search Results

SiTN

Abstract: TN0106 TN0106N3-G TN1506NW VF15
Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

TN0106

Abstract: TN0106N3-G
Contextual Info: TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: ^ Superte x inc. TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package b v dcs R ds on (m ax) (m in) VGS(th) (max) TO-39 TO-92 DICE* 60V 3ß 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Q

Contextual Info: TELEDYNE COMPONENTS WÊ 5ÖE D ö cil7laGS QQQbm.'l 7 _ SD1137, TN0106 SEM ICO NDUCTO R _ TNOllO N-CHANNEL ENHANCEMENT-MODE r 27 ” ' D-MOS POWER FETS ORDERING INFORMATION T<£226AA TO-92 Pfastfc Packsfl« ported Chip* In Waffle Pack

Contextual Info: TN0106N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

TN0106

Contextual Info: Supertex inc. TN0106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0106 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS/ RDS ON ID(ON) VGS(TH) BVDGS (max) (min) (max) 60V 3.0Ω 2A 2.0V TN0106 TN0106N3 TN0106N3-G 100V 3.0Ω 2A 2.0V TN0110 TN0110N3 TN0110N3-G Package Options

TN0106

Abstract: TN0106N3 TN0110 TN0110N3
Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package 60V 3.0Ω 2A 2.0V TN0106N3 100V 3.0Ω 2A 2.0V TN0110N3 TO-92 Features Low Threshold DMOS Technology

TN0110N2

Contextual Info: _ TN0106 TN0110 _ Super tex inc. r . . . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BVpcs RpS ON (max) ' d(ON) (min) VgS(Mi ) (max) TO-39 TO-92 Diet 60V 3.on 2A 1.6V — TN0106N3 TN0106ND

TN0106

Contextual Info: TN0106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

Contextual Info: _ TN0106 TN0110 _ Super t e x inc. T, k N _ Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) ^G S(th) Order Num ber / Package b v dgs (max) (min) (max) TO-92

B0706

Contextual Info: TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN0110N2

Abstract: TN0106N2 TN0106 TN0106N3 TN0106ND TN0110 TN0110N3 TN0110ND
Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 DICE† 60V 3Ω 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Ω 2A 1.6V

b0808

Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

TN0106

Abstract: TN0106N3 TN0110 TN0110N3 TN0110ND
Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 Die† 60V 3.0Ω 2A 2.0V TN0106N3 — 100V 3.0Ω 2A 2.0V TN0110N3 TN0110ND

Contextual Info: TN0106 TN0110 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package b v dss/ ^DS ON ^D(ON) ^GS(th) b v dgs (max) (min) (max) TO-39 TO-92 DICE+ 60V 3Q 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Q 2A 1.6V TN0110N2 TN0110N3

P-DIP18P

Abstract: VQ300IP v020 AN0130NA ANO120 VQ2004P VQ2006J VQ2006P VQ3001J VQ7254P
Contextual Info: - ft X t m VQ2004P VQ2006J VQ2006P VG3001J VQ3001P VQ7254J VQ7254P AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA AP0116NA AP0120NA AP0130NA AP0132NA AP014QNA TC0604WG TN0102N2 TNQ102N3 TM0102ND TN0mK2 TN0104N3 TN0104ND TN0106N2 TNQ1Q6N3 TN0106ND TN0110N2 TN0110N3

Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces

Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s

TN0106

Abstract: TN0106N3 TN0106ND TN0110 TN0110N2 TN0110N3 TN0110ND
Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 Die† 60V 3.0Ω 2A 1.6V — TN0106N3 TN0106ND 100V 3.0Ω 2A 1.6V

Contextual Info: TN0106N2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)800m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.5 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)3.5 Minimum Operating Temp (øC)-55

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

TN0106N3

Abstract: TN0106 SD1137BD SD1137 SD1137CHP TN0106ND TN0110 TN0110N3 TN0110ND TO226AA
Contextual Info: T OPAZ S E M I C O N D U C T O R GSE D | TGÖSaab OOQIDME S | T F f5 in = *U £ \ ^ s D ira? , m o im SEMICONDUCTOR_ ;_ TM 0110 N-CHANNEL ENHANCEMENT D-MOS POWER FETs T ' r > '* ’ ORDERING INFORMATION TO -226AA TO -92 Plastic Package Sorted Chips In Watfle Pack