TN0106N3 Search Results

Contextual Info: ^ Superte x inc. TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package b v dcs R ds on (m ax) (m in) VGS(th) (max) TO-39 TO-92 DICE* 60V 3ß 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Q

Contextual Info: TN0106N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS/ RDS ON ID(ON) VGS(TH) BVDGS (max) (min) (max) 60V 3.0Ω 2A 2.0V TN0106 TN0106N3 TN0106N3-G 100V 3.0Ω 2A 2.0V TN0110 TN0110N3 TN0110N3-G Package Options

TN0106

Abstract: TN0106N3 TN0110 TN0110N3
Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package 60V 3.0Ω 2A 2.0V TN0106N3 100V 3.0Ω 2A 2.0V TN0110N3 TO-92 Features Low Threshold DMOS Technology

TN0110N2

Contextual Info: _ TN0106 TN0110 _ Super tex inc. r . . . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BVpcs RpS ON (max) ' d(ON) (min) VgS(Mi ) (max) TO-39 TO-92 Diet 60V 3.on 2A 1.6V — TN0106N3 TN0106ND

TN0110N2

Abstract: TN0106N2 TN0106 TN0106N3 TN0106ND TN0110 TN0110N3 TN0110ND
Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 DICE† 60V 3Ω 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Ω 2A 1.6V

Contextual Info: TN0106 TN0110 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package b v dss/ ^DS ON ^D(ON) ^GS(th) b v dgs (max) (min) (max) TO-39 TO-92 DICE+ 60V 3Q 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Q 2A 1.6V TN0110N2 TN0110N3

SiTN

Abstract: TN0106 TN0106N3-G TN1506NW VF15
Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

TN0106N3

Abstract: TN0106 SD1137BD SD1137 SD1137CHP TN0106ND TN0110 TN0110N3 TN0110ND TO226AA
Contextual Info: T OPAZ S E M I C O N D U C T O R GSE D | TGÖSaab OOQIDME S | T F f5 in = *U £ \ ^ s D ira? , m o im SEMICONDUCTOR_ ;_ TM 0110 N-CHANNEL ENHANCEMENT D-MOS POWER FETs T ' r > '* ’ ORDERING INFORMATION TO -226AA TO -92 Plastic Package Sorted Chips In Watfle Pack

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TN0106

Abstract: TN0106N3-G
Contextual Info: TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

Contextual Info: TELEDYNE COMPONENTS WÊ 5ÖE D ö cil7laGS QQQbm.'l 7 _ SD1137, TN0106 SEM ICO NDUCTO R _ TNOllO N-CHANNEL ENHANCEMENT-MODE r 27 ” ' D-MOS POWER FETS ORDERING INFORMATION T<£226AA TO-92 Pfastfc Packsfl« ported Chip* In Waffle Pack

VN5000TNE

Abstract: IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M
Contextual Info: MOSFET Item Part Number Manufacturer V BR DSS loss Max Po Max ros (on) gFS Min VGS(th) elsa Max Max tr Max tf Max TOper Max Package Style N-Channel Enhancement-Type, (Co nt' d) 5 S01124Bo S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM 15

Contextual Info: T N 01A Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS/ R d S ON ' d (ON) ^ G S (th ) b v dgs (max) (min) (max) 60V 3a 2A 100V 3a 2A Order Number / Package TO-39 TO-92 DICEt

Contextual Info: _ TN0106 TN0110 _ Super t e x inc. T, k N _ Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) ^G S(th) Order Num ber / Package b v dgs (max) (min) (max) TO-92

PLCC-6 5050

Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Contextual Info: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case

B0706

Contextual Info: TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

b0808

Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

Contextual Info: T N 01 A tìì Supertex inc. L o w T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss / R d s io n i I d ON V g s (ii i ) b v dgs (max) (min) (max) TO-39 TO-92 60V

Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces

Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s