BS107A Search Results

BS107

Abstract: BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage

BS107A equivalent

Abstract: BS107 "direct replacement" BC237 BS107 BC108 characteristic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 ID IDM 250 500 PD 350 mW TJ, Tstg – 55 to 150 °C Drain – Source Voltage

TRANSISTOR SL 100

Abstract: bs107a
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS107A QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. Gate-source voltage open drain • High-speed switching Drain current (DC) • No second breakdown

Contextual Info: BS107A J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and

BS107A

Abstract: BS107 MOTOROLA
Contextual Info: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TM OS Switching N-Channel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 us Symbol

BC107 characteristic

Abstract: BC107 to92 BS107 BC107 to-92
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage

Contextual Info: BS107A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)250m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC)

BP317

Abstract: BS107A MBB692
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N -C hannel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Vd S 200 Vdc Vg s Vg SM ±20 ±30 Vdc Vpk Id 'd m 250 500 pd 350 mW T ji Tstg -5 5 to 150 °C Drain - Source Voltage

BS107

Abstract: BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs Drain Current Continuous (Note 1.) Pulsed (Note 2.)

BS107

Abstract: BS107G BS107AG BS107A BS107ARL1 BS107ARL1G mosfet to92
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Package is Available* 250 mAMPS, 200 VOLTS RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) Rating Drainā-āSource Voltage

BS107A

Contextual Info: BS107A A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and

Contextual Info: BS107A Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92 Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device* http://onsemi.com 250 mAMPS, 200 VOLTS RDS on = 6.4 W MAXIMUM RATINGS Rating Drain −Source Voltage Gate−Source Voltage

Contextual Info: BS107A Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • AEC Qualified • PPAP Capable • This is a Pb−Free Device* 250 mAMPS, 200 VOLTS RDS on = 6.4 W N−Channel D MAXIMUM RATINGS Rating Drain −Source Voltage

BS107 MOTOROLA

Abstract: BS107A BS107
Contextual Info: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs

BS107

Abstract: PPAP MANUAL BS107AG BS107A BS107ARL1 BS107ARL1G BS107G
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 http://onsemi.com Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Package is Available* 250 mAMPS, 200 VOLTS RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching BS107 BS107A N -Channel — Enhancement 1 DRAIN G ATE ' 3 SOURCE M AXIM UM R A T IN G S Rating Symbol Value Unit V DS 2 00 Vdc VGS V GSM ± 20 ± 30 Vdc Vpk 'd 'D M 250 500 PD 350 mW ^J. Ts tg - 5 5 to 150

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

PHC2300

Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT
Contextual Info: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221

Contextual Info: BS107A _ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use as line current interrupter in telephone sets and fo r application in relay, high-speed and

BC107 to92

Abstract: BC107 characteristic bs107 BC107 to-92
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage

Contextual Info: BS107A y V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

mpx6115

Abstract: wheatstone bridge invasive blood pressure sensor AN1646 abstract for battery level indicator of lm3914 infusion pump pressure transducer ZO 607 TRIAC TRANSISTOR NPN, b2f piezo buzzer mtbf ABSTRACT FOR water level indicator using 4 led MPX5100
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Sensor Device Data Book DL200/D Rev. 5, 01/2003 WWW.MOTOROLA.COM/SEMICONDUCTORS For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. DATA CLASSIFICATION Product Preview