BS250 Search Results

VP0610T

Abstract: 0610L BS250 TP0610T
Contextual Info: TP0610U T , VP061OL/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V (B R )D SS Min (V) r D S (o n) Max ( Q ) v G S (th) Ip (A) (V) TP0610L -6 0 10 @ V Gs = - 1 0 V -1 to -2 .4 TP0610T -6 0 10 @ V GS = - 1 0 V -1 to -2 .4

bs250

Contextual Info: BS250 DMOS Transistor P-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway

BS250p

Abstract: ZVP2106A fet to92 to92 fet p channel bs250 to92 fet DSA0037522
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 – SEPT 93 FEATURES * 45 Volt VDS * RDS on =14Ω D G REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -45 V Continuous Drain Current at Tamb =25°C

mosfet bs250

Abstract: BS250 VP0610T 0610L AN804 TP0610L TP0610T VP0610L BS250 mosfet
Contextual Info: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4

BS250

Contextual Info: BS250 Vishay Semiconductors formerly General Semiconductor DMOS Transistor P-Channel TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • • • • • • • High input impedance High-speed switching No minority carrier storage time

bs250f

Abstract: GS SOT23
Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250F ISSUE 3 - JANUARY 1996 PAR TM ARKING DETAIL - M X SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e V qs -45 V C o n tin u o u s D ra in C u rre n t at Tamb=25°C •o

40244

Abstract: 250KL bs250kL BS250KL-TR1 BS250KLTR1
Contextual Info: TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2

BS250

Abstract: mosfet bs250 VP0610T TP0610L TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Siliconix P-Ch Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 PRODUCT SUMMARY PART NUMBER V BR DSS MIN (V) RDS(ON) MAX (W) VGS(TH) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T

BS250

Abstract: diode ITT 172 ITT Intermetall bs250 ITT DIODE
Contextual Info: BS250 P-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown On special request, this transistor is also manufactured

equivalent of BS250

Abstract: BS250 datasheet TA 7061 BS250 VP0610T part marking for tp0610t TO-92-18RM TP610L TP0610L TP0610T
Contextual Info: TP610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOS Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60

250KL

Abstract: 40244 BS250KL TP0610KL TO-92-18RM S402 0610K
Contextual Info: TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2

MX SOT23

Abstract: BS250F DSA003678
Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250F ISSUE 3 - JANUARY 1996 S D G PARTMARKING DETAIL – MX SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -45 V Continuous Drain Current at Tamb=25°C Pulsed Drain Current

Contextual Info: BS250 P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • Low RpSon D irect interface to C MOS

VMOS Transistor

Abstract: BS250
Contextual Info: BS250 Enhancement Mode P-Channel VMOS Transistor Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown m ax.Q 5# Plastic case ~ JEDEC TO-92 TO-18 compatible

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 - S E P T 93_ FEATURES * 45 Volt V,DS R DS on = U £ i REFER TO ZVP2106A FOR GRAPHS E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

zvp2106a

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 -S E P T 93 FEATU RES * 45 Volt V,DS * R DS on =14i2 R EFER TO ZVP2106A FOR G R A P H S E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Drain-Source Voltage VALUE UNIT VDS -45

BS250P

Abstract: G37 mosfet
Contextual Info: PLESSEY SEP1IC0ND/DISCRETE ~T5 DE 17ESDS33 □ □□.55 3 3 S | ~ 7220533 P L ES SE Y S E M I C O N D / D ISCRETE 95D 05533 D T '3 5 'Z S ' P-channel enhancement mode vertical DMOS FET BS250P FEATURES • Com pact geometry • Fast sw itching speeds • No secondary breakdown

g28 SOT23

Abstract: LE SOT23-4 BS250F s33 sot23
Contextual Info: “ÌS P LE S S EY SEtlICOND/DISCRETE 7220533 PLESSEY DE 1• 7 2 2 0 5 3 3 0005525 3 SEMICOND/ D I S C R E T E 95D 05525 T '3 S '- 2 5 BS250F P-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown

OCO500

Abstract: BS250
Contextual Info: BS250 VISHAY P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR LITEM ZI POWER SEMICONDUCTOR y Features High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

IRF7205

Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY

BS250

Abstract: equivalent of BS250 BS250 datasheet
Contextual Info: BS250 DMOS Transistors P-Channel TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown

BS250

Abstract: TP0610L VP0610T AN804 TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Siliconix PĆChannel EnhancementĆMode MOS Transistors TP0610L TP0610T Product Summary VP0610L VP0610L BS250 Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T VP0610L

Contextual Info: Small-Signal DMOS Transistors Package Leaded VDSS Volt TO-92 TO-92 N-Channel P-Channel 50 60 240 BS250 2N7000 Surface Mount SOT-23 SOT-23 ID mA RDS(ON) (Ω) @ VGS /ID BSN20 + 100 15 10V / 100mA 2N7002 250 3 10V / 500mA 250 5 10V / 200mA 300 5 10V / 500mA

250KL

Abstract: 40244
Contextual Info: TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2