BSS84 Search Results

jstd

Contextual Info: BSS84V DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant Note 3

BSS110

Abstract: BSS84
Contextual Info: May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

TRANSISTOR SMD MARKING CODE dk

Abstract: TRANSISTOR SMD MARKING CODE SMD TRANSISTOR MARKING code DD TRANSISTOR SMD CODE PACKAGE SOT23 marking code UL SMD Transistor smd transistor marking br TRANSISTOR SMD MARKING CODE A1 transistor SMD DK TRANSISTOR SMD CODE 339 smd code marking 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode

A03 transistor

Abstract: marking A03 BSS84 MMBT4401
Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic

bss84

Abstract: TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84.215
Contextual Info: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.

Dual P-Channel MOSFET

Abstract: g1 TRANSISTOR SMD MARKING CODE
Contextual Info: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V BR DSS RDS(on) max Q1 Q2 60V -50V 13.5Ω @ VGS = 10V 10Ω @ VGS = -5V ID TA = +25°C 115mA -130mA Description This MOSFET has been designed to minimize the on-state resistance

2N7002 MARKING 702

Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82

Contextual Info: BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

marking code 27a

Abstract: A03 transistor BSS84 MARKING CODE BSS84 MMBT4401 sot-363 p-channel mosfet
Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic

Contextual Info: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: BSS84W ADVANCE INFORMATION P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed SOT-323 A D TOP VIEW Mechanical Data · · · · · G Case: SOT-323, Molded Plastic

BSS84

Abstract: BSS84 marking
Contextual Info: BSS84 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable

Q67042-S4028

Abstract: BSS84PW VSO05561 smd diode sot-323 marking code k smd marking code ybs
Contextual Info: Preliminary data BSS84PW SIPMOS  Small-Signal-Transistor Features Product Summary • P-Channel · Enhancement mode · Avalanche rated · Logic Level · dv/dt rated Drain source voltage VDS Drain-source on-state resistance RDS on Continuous drain current

BSS84AKS

Abstract: TSSOP-6 BSS84AK
Contextual Info: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.

Contextual Info: BSS84W NEW PRODUCT P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed SOT-323 A D TOP VIEW Mechanical Data · · · · · G Case: SOT-323, Molded Plastic

2N7002 MARKING

Abstract: codes marking 2N7002 bss84 spice 2N7002 BSS84 BSS8402DW J-STD-020D rds on-resistance
Contextual Info: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage

bss84

Abstract: BSS84LT1 BSS84LT1G sot-23 MARKING CODE 21
Contextual Info: BSS84LT1 Power MOSFET 130 mA, 50 V P−Channel SOT−23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are DC−DC converters, load switching, power management in portable and battery−powered

Contextual Info: BSS84 P-Channel Enhancement Mode Field-Effect Transistor Features Description • • -0.13 A, -50 V, RDS ON = 10 Ω at VGS = -5 V   High-Density Cell Design for Low RDS(ON) This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary,

BSS84W

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance

marking S84 diode

Abstract: BSS84DW SC70-6L
Contextual Info: BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 SC70-6L package. This device is ideal for portable applications where board space is at a premium.

marking YBs

Contextual Info: BSS84PW SIPMOS  Small-Signal-Transistor Features Product Summary • P-Channel · Enhancement mode · Avalanche rated · Logic Level · dv/dt rated Drain source voltage VDS Drain-source on-state resistance RDS on Continuous drain current ID -60 V 8 W -0.15

BSS8402DWQ

Contextual Info: BSS8402DW Features Mechanical Data • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Lead Free/RoHS Compliant Note 1 "Green" Device (Notes 2 and 3)