E6433 Search Results

bss84

Abstract: BSS84 E6327 marking BSs sot23 siemens BSS84 siemens
Contextual Info: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type BSS84 Vos -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 b -0.13 A WDS(on) 10Q Pin 3 S Package Marking

BAS16

Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
Contextual Info: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U

BSS138

Abstract: Q67000-S566 E6327 Q67000-S216 marking BSs
Contextual Info: BSS 138 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 138 50 V 0.22 A 3.5 Ω SOT-23 SSs Type BSS 138 BSS 138 Ordering Code Q67000-S566

SOT23 marking skS

Abstract: Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs
Contextual Info: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23

microtune

Abstract: BAR63-03W BB639CE7906 E6327 sod323 diode marking code AC marking code INFINEON 368 marking INFINEON marking
Contextual Info: BB639CE7906 Microtune Silicon Variable Capacitance Diode 2
For tuning of extended frequency band 1 in VHF TV / VTR tuners VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB639CE7906 Microtune yellow S 1=C SOD323 2=A Maximum Ratings Parameter

BFN24

Abstract: BFN25 BFN26 BFN27
Contextual Info: BFN24, BFN26 NPN Silicon High-Voltage Transistors 3
Suitable for video output stages in TV sets and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage 2
Complementary types: BFN25, BFN27 PNP 1 Type Marking Pin Configuration

BCP51

Abstract: BCP51-10 BCP51-16 BCP52 BCP52-10 BCP52-16 BCP53 BCP54 BCP56 VPS05163
Contextual Info: BCP51.BCP53 PNP Silicon AF Transistors
For AF driver and output stages
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BCP54.BCP56 NPN 3 2 1 Type Marking Pin Configuration BCP51 BCP 51 1=B 2=C 3=E 4=C SOT223

BCP52-16

Abstract: BFN38 BFN39 E6327 VPS05163
Contextual Info: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and 4 switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage 3 • Complementary type: BFN39 PNP 2 1 Type Marking BFN38 BFN 38

code marking ssn sot-23

Abstract: SSN SOT-23 Q67042-S4185 sot-23 ssn marking ssn E6327 SN7002N sSN SOT23
Contextual Info: Final data SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Ordering Code Q67042-S4185 Tape and Reel Information

SOT23 marking skS

Abstract: SKs SOT23 BSS138N marking code SKs Q67042-S4184 BSS138N Q67042-S41 sks 46 SKs TRANSISTOR E6327
Contextual Info: Rev. 2.0 BSS138N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS 60 V • Enhancement mode RDS on 3.5 Ω • Logic Level ID 0.23 A • dv/dt rated SOT23 Drain pin 3 Gate pin1 Source pin 2 Type Package Ordering Code Tape and Reel Information

BCR15PN

Abstract: infineon marking W1s BCR108S E6327 VPS05604 marking code w1s
Contextual Info: BCR15PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) 2 3 1 VPS05604

Contextual Info: BFG19S NPN Silicon RF Transistor
For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BAS28

Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

h11e

Abstract: transistor BC 660
Contextual Info: BC846PN NPN/PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation

Contextual Info: BFR182T NPN Silicon RF Transistor Preliminary data 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

A1s sot23

Abstract: BAW56S E6327 MARKING CODE A1s
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323

BDP 948 E6433

Contextual Info: BDP948, BDP950 PNP Silicon AF Power Transistors
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP947, BDP949 NPN 2 1 Pin Configuration VPS05163 Type Marking

BAR14-1

Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

Contextual Info: BAS52. Silicon Schottky Diode
Medium current rectifier Schottky diode
Low forward voltage at 200mA
High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration

PZTA92 E6433

Contextual Info: PZTA42 NPN Silicon High Voltage Transistor
High breakdown voltage 4
Low collector-emitter saturation voltage
Complementary type: PZTA92 PNP 3 2 1 Type Marking PZTA42 PZTA 42 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings

Contextual Info: BA592/BA892. Silicon RF Switching Diode
For band switching in TV/VTR tuners and mobile applications
Very low forward resistance typ. 0.45  @ 3 mA
small capacitance BA592 BA892/-02L BA892-02V 1 2 Type BA592 BA892 BA892-02L BA892-02V Package SOD323

Contextual Info: BFP181 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

bas125

Contextual Info: BAS125. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS125-04W BAS125-05W ! ,  BAS125-06W ! ,  ,  BAS125-07W ! ,  ,  "

28c10

Contextual Info: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion