VPS05161 Search Results

BCR162

Contextual Info: BCR162 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR583

Contextual Info: BCR583 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR583 XMs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR569

Contextual Info: BCR569 PNP Silizium Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR183

Contextual Info: BCR183 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR183 WMs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR553

Contextual Info: BCR553 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR553 XBs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR521

Contextual Info: BCR521 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

bat18 a2

Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
Contextual Info: BAT18.BAT18-05 Silicon RF Switching Diode 3
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s

BCR569

Contextual Info: BCR569 PNP Silizium Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1 = 4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR133

Contextual Info: BCR133 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR133 WCs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR198

Contextual Info: BCR198 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR198 WRs Pin Configuration 1=B 2=E Package 3=C SOT23

bas125

Abstract: BAS 20 SOT23
Contextual Info: BAS 125 Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 BAS 125 BAS 125-04 BAS 125-05 1 3 BAS 125-06 3 3 3 1 2 VPS05161 1 2

a6s marking

Abstract: A6s sot23 transistor A6S BAS16 bas16ta
Contextual Info: BAS16 3 Silicon Switching Diode
For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type BAS16 Marking A6s Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage- VRM 85

BCR146

Contextual Info: BCR146 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R2=22k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR146 WLs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR153

Contextual Info: BCR153 PNP Silicon Digital Transistor Preliminary data 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR153 WBs Pin Configuration 1=B 2=E Package

marking 93A

Abstract: BFR93A transistor marking R2s
Contextual Info: BFR 93A NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration

s3s sot23

Abstract: BBY51
Contextual Info: BBY51 Silicon Tuning Diode 3
High Q hyperabrupt dual tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment 2 1 Type Marking BBY51 S3s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT23 Maximum Ratings

BAS16TA

Abstract: marking a6s BAS16 A6S SOT23
Contextual Info: BAS16 3 Silicon Switching Diode
For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type BAS16 Marking A6s Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR Peak reverse voltage- VRM Forward current

Contextual Info: BCR 119 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR 119 WKs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings

Contextual Info: BAR 66 Silicon PIN Diode Array 3
Surge protection device
Two PIN diodes, series configuration
Designed for surge overvoltage clamping in antiparallel connection 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAR 66 PMs Pin Configuration 1 = A1 2 = C2 Package

Contextual Info: BCR 139 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR 139 WYs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings

bar74

Abstract: oscillograph
Contextual Info: BAR74 Silicon Switching Diode 3
For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking BAR74 JBs Pin Configuration 1=A 2 = n.c. Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM

SOT-23 marking w2s

Abstract: marking w2s w2s sot23
Contextual Info: BCR 189 PNP Silicon Digital Transistor Preliminary data 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1 = 22k 2 C 3 1 VPS05161 R1 1 2 B E EHA07180 Type Marking BCR 189 W2s Pin Configuration 1=B 2=E Package

Contextual Info: BCR 133 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 133 WCs Pin Configuration 1=B 2=E Package 3=C SOT-23

Contextual Info: BCR 521 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 521 XVs Pin Configuration 1=B 2=E Package 3=C