bat18 a2
Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
Contextual Info: BAT18.BAT18-05 Silicon RF Switching Diode 3 Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s
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bat18bat18-05bat18-04eha07005+10eha07002vps05161eha07004bat18 a2top marking c2 sot23a2 sot23aus sot23c2 sot23top marking 3c sot23bat18-04 sot23
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a6s marking
Abstract: A6s sot23 transistor A6S BAS16 bas16ta
Contextual Info: BAS16 3 Silicon Switching Diode For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type BAS16 Marking A6s Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage- VRM 85
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bas16vps05161eha07002ehb00023+6aug-29-2001ehb00024a6s markinga6s sot23transistor a6sbas16ta
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BAT68-04W
Abstract: BAT68-05W BAT68-06W BAT68W VSO05561
Contextual Info: BAT68W Silicon Schottky Diodes For mixer applications in the VHF / UHF range 3 For high-speed switching applications 2 1 BAT68W BAT68-05W BAT68-04W 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT68-06W 3 3 VSO05561 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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bat68wbat68-05wbat68-04weha07005+5eha07002bat68-06wvso05561eha07006eha07004
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BAS16TA
Abstract: marking a6s BAS16 A6S SOT23
Contextual Info: BAS16 3 Silicon Switching Diode For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type BAS16 Marking A6s Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR Peak reverse voltage- VRM Forward current
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bas16vps05161eha07002ehb00023+5mar-11-2002ehb00024bas16tamarking a6sa6s sot23
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bar74
Abstract: oscillograph
Contextual Info: BAR74 Silicon Switching Diode 3 For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking BAR74 JBs Pin Configuration 1=A 2 = n.c. Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM
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bar74vps05161eha07002ehb00013+4ehb00014jul-27-2001ehb00015oscillograph
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top marking c2 sot23
Abstract: marking a2s sot-23 sot-23 Marking c1 AUS SOT23 sot23 marking a2 DIODE BAT EHA07002 top marking ATS sot23 marking 04 sot-23 marking a1 sot23
Contextual Info: BAT 18 . Silicon RF Switching Diode 3 • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance 2 1 BAT 18 BAT 18-05 BAT 18-04 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT 18-06 3 3 VPS05161 1 2 EHA07006 EHA07004 Type Marking Pin Configuration
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eha07005eha07002vps05161eha07006+12eha07004ot-23100mhztop marking c2 sot23marking a2s sot-23sot-23 marking c1aus sot23sot23 marking a2diode battop marking ats sot23marking 04 sot-23marking a1 sot23
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Contextual Info: BAS 16W Silicon Switching Diode 3 For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type Marking BAS 16W A6s Pin Configuration 1=A 2 = n.c. Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage
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vso05561eha07002ot-323mar-02-2001+2ehb00025ehb00022
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Contextual Info: SMBD914/ MMBD914 Silicon Switching Diode 3 For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking SMBD914/ MMBD914 s5D Pin Configuration 1=A 2 n.c. Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage
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smbd914/mmbd914vps05161eha07002+3ehb00112ehb00113feb-18-2002
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Contextual Info: BAT64W. 3 Silicon Schottky Diode For low-loss, fast-recovery, meter protection, bias isolation and clamping applications 2 Integrated diffused guard ring Low forward voltage BAT64W 1 BAT64-04W 1 BAT64-06W 3 3 3 3 EHA07002 BAT64-05W 1 2 1 1 2 2 EHA07006
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bat64wbat64-04wbat64-06weha07002+5bat64-05weha07006eha07004eha07005vso05561
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Contextual Info: SIEMENS Silicon Switching Diode SMBD 914 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 914 s5D Q68000-A625 Pin Configuration Package1» SOT-23 1 ho 3 Rd-o o-^ EHA07002 Maximum Ratings Parameter Symbol
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q68000-a625ot-23eha0700223stid5+301ee4cfle35bq501ee500
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MARKING 720 SOT23
Abstract: DIODE 4004 BAS 20 SOT23 4004 diode 44s sot23 DIODE 4005 720 SOT23 43s sot23 4004 top marking c2 sot23
Contextual Info: BAS 40 . Silicon Schottky Diodes 3 • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 2 1 BAS 40 BAS 40-04 BAS 40-05 1 3 1 2 EHA07002 BAS 40-06 3 3 3 VPS05161 1 2 EHA07005 1
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eha07002vps05161eha07005eha07006+13eha07004ot-23ehb00040marking 720 sot23diode 4004bas 20 sot234004 diode44s sot23diode 4005720 sot2343s sot234004top marking c2 sot23
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tr bar
Abstract: BAR74
Contextual Info: BAR 74 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking BAR 74 JBs Pin Configuration 1=A 2 = n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage
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vps05161eha07002ot-23ehb00013+5ehb00014oct-05-1999ehb00015tr barbar74
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Contextual Info: SIEM EN S Silicon Switching Diode SMBD 914 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 914 s5D Q68000-A625 Pin Configuration Package1» SOT-23 o- O j- o ^ ' EHA07002 Maximum Ratings Parameter
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q68000-a625ot-23eha07002package10+1b00112
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sot-23 Marking c1
Abstract: 355 sot-23 65s sot23 SOT23 Marking 64s diode marking 355 SOT23 65s1 TS SOT23
Contextual Info: BAT 64 Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 BAT 64 1 3 BAT 64-04 BAT 64-05 BAT 64-06 3 3 3 1 2 1 2 EHA07005 EHA07002
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vps05161eha07005eha07002eha07006+10eha07004ot-23parame40sot-23 marking c1355 sot-2365s sot23sot23 marking 64sdiode marking 355 sot2365s1ts sot23
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7004 001
Abstract: bas 20 sot23 75s SOT-23 BAS 70-05 bas 70-5 73S SOT23 75S SOT23 BAS 70-04 schottky 73s
Contextual Info: BAS 70 . Silicon Schottky Diodes 3 • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 2 1 BAS 70 BAS 70-04 BAS 70-05 1 3 BAS 70-06 3 3 3 1 2 EHA07002 VPS05161 1 2 EHA07005 1
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eha07002vps05161eha07005eha07006+12eha07004ot-23oct-07-19997004 001bas 20 sot2375s sot-23bas 70-05bas 70-573s sot2375s sot23bas 70-04schottky 73s
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BAT68
Abstract: BAT68-04 BAT68-05 BAT68-06
Contextual Info: BAT68 Silicon Schottky Diodes 3 For mixer applications in the VHF / UHF range For high-speed switching applications 2 1 BAT68 1 3 BAT68-04 BAT68-05 BAT68-06 3 3 3 1 2 1 2 EHA07005 EHA07002 1 VPS05161 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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bat68bat68-04bat68-05bat68-06+5vps05161eha07005eha07002eha07006eha07004
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BAS16W
Abstract: VSO05561 marking A6s
Contextual Info: BAS16W Silicon Switching Diode 3 For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type BAS16W Marking A6s Pin Configuration 1=A 2 = n.c. 3=C Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM
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bas16wvso05561eha07002ot323+4aug-29-2001ehb00025ehb00022marking a6s
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bas125
Abstract: BAS125-04W BAS125-05W BAS125-06W BAS125W VSO05561
Contextual Info: BAS125W Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, 3 bias isolation and clamping applications Integrated diffused guard ring Low forward voltage 2 1 BAS125W 1 3 BAS125-04W BAS125-05W BAS125-06W 3 3 3 1 2 1 2 EHA07005 EHA07002
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Contextual Info: SIEMENS BAR 74 Silicon Switching Diode • For high-speed switching Type Marking Ordering Code tape and reel BAR 74 JBs Q62702-F704 Pin Configuration Package1) SOT-23 o-— ^ 1 -o 1 EHA07002 Maximum Ratings Parameter Symbol Values Unit V Reverse voltage
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q62702-f704ot-23eha07002as35bq5+201202mbfls3sb05
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Contextual Info: SIEMENS BAT17W Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications BAT17W BAT17-04W BAT 17-05W BAT 17-06W 3 3 3 o W 3 1 -o o- o •W-Ul- 2 -0 EHA07002 1 0- 2 -o I 0- -W -Ul- EHA07004 EHA07005
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bat17wbat17-04w7-05w7-06w+5eha07002eha07004eha07005eha07006q62702-a1271
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Contextual Info: SMBD914 Silicon Switching Diode 3 For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking SMBD914 s5D Pin Configuration 1=A 2 n.c. Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM
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Pin diode G4S
Abstract: SOT-23 2.D
Contextual Info: BAR 63 . Silicon PIN Diodes 3 • PIN diode for high speed switching of RF signals • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63 BAR 63-04 BAR 63-05 1 3 BAR 63-06 3 3 3 1 2 EHA07002 VPS05161 1 2 EHA07005 1
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eha07002vps05161eha07005eha07006+5eha07004ot-23ehb07145pin diode g4ssot-23 2.d
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BAS116
Contextual Info: BAS116 3 Silicon Low Leakage Diode Low-leakage applications Medium speed switching times 2 Single diode 1 1 VPS05161 3 EHA07002 Type BAS116 Marking JVs Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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44s sot23
Abstract: 43s sot23 MARKING 720 SOT23 top marking c2 sot23 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS40-5
Contextual Info: BAS40. 3 Silicon Schottky Diodes General-purpose diode for high-speed switching Circuit protection 2 Voltage clamping High-level detecting and mixing BAS40 1 1 BAS40-04 BAS40-06 3 3 3 3 EHA07002 BAS40-05 1 2 1 1 2 2 EHA07006 EHA07004 EHA07005 VPS05161
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bas40bas40-04bas40-06eha07002+10bas40-05eha07006eha07004eha07005vps0516144s sot2343s sot23marking 720 sot23top marking c2 sot23bas40-5
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