FLE35BQ5 Search Results

TLE4276

Abstract: TLE4276 2 V50 TLE4276SV Q67000-A9262 tle4276g
Contextual Info: SIEMENS Low-Drop Voltage Regulator TLE 4276 Features • • • • • • • Output voltage tolerance < + 4% Low-drop voltage Inhibit input Very low current consumption Short-circuit-proof Reverse polarity proof Suitable for use in automotive electronics

q1205

Contextual Info: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)

kp 72

Contextual Info: ,•— Infineon technologies Surface Mount Piezoresistive Silicon Absolute Pressure Sensor KP 202-R/RK KP 203-R/RK Preliminary Features • • • • • High sensitivity and linearity Fast response Very small dimensions Low cost Produced in qualified semiconductor

Contextual Info: SIEMENS Silicon Switching Diode SMBD 914 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 914 s5D Q68000-A625 Pin Configuration Package1» SOT-23 1 ho 3 Rd-o o-^ EHA07002 Maximum Ratings Parameter Symbol

Contextual Info: S IE M E N S PÑP Silicon High-Voltage Transistors MPSA 92 MPSA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: M P S A 42 M P S A 43 NPN Type M P S A 92 M P S A 93 Marking M P S A 92 M P S A 93 Ordering Code

Contextual Info: SIEMENS LD 261 LD 262—269/260 s in g l e d io d e arrays Infrared Emitters Dimensions in inches mm APPLICATIONS • Miniature photointerrupters • Punched tape-readers • Industrial electronics • For control and drive circuits DESCRIPTION The LD260-269 series, GaAs infrared emitting diodes,

Contextual Info: SIEMENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - tcKS 6 8 7 8 ns {AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability

Contextual Info: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings

transistor smd AsG

Abstract: BSS88 M7 SMD DIODE MARKING
Contextual Info: BSS88 In fin e o n technologias SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^GS m = 0-8.2.0V Type Vbs BSS88 240 V Type BSS88 BSS88 BSS88 Ordering Code Q62702-S287 Q62702-S303 Q62702-S576 0.25 A B DS(on) Package

Contextual Info: SIEMENS PEB 20550 PEF 20550 Overview 1 Overview The PEB 20550 Extended Line Card Controller is a highly integrated controller circuit optimized for line card and key system applications. It combines all functional blocks necessary to manage up to 32 digital (ISDN or proprietary) or 64 analog subscribers.

Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers SAB 88C166 W Preliminary SAB 88C166(W) 16-Bit Microcontrollers with 32 KByte Flash EPROM • • • • • • • • • • • • • • • • • • • • • High Performance 16-bit CPU with 4-Stage Pipeline

Contextual Info: SIEMENS 512kx8-Bit Dynamic RAM HYB 514800BJ -60/-70/-80 Advanced Information • 512 288 words by 8-bit organization Low power dissipation max. 605 mW active -60 version max. 550 mW active (-70 version) max. 468 mW active (-80 version) • 0 to 70 "C operating temperature

Contextual Info: SIEM ENS 3.3V 256 K X 16-Bit EDO-DRAM HYB 314175BJ-50/-55/-60 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh HYB 314175BJL-50/-55/-60 Preliminary Information Low Power dissipation max. 450 mW active (-50 version) max. 432 mW active (-55 version)

Contextual Info: SIEM EN S 2-Phase Stepper-Motor Driver TLE 4728 G Bipolar-IC Overview Features • 2 x 0.7 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Output stages are free of crossover current

Contextual Info: SIEMENS 1 Form A/Phototransistor device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to Absolute Maximum Ratings for extended periods of time can adversely affect reliability.

Contextual Info: SIEMENS C16x-Family of SAB 80C166W/83C166W High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166W / 83C166W • • • • • • • • • • • • • • • • • • • • • • • • • • • • 16-Bit Microcontroller

Contextual Info: bOE D • SIEMENS fl235bDS 0GSD727 S73 « S I E G SIEMENS AKTIENGESELLSCHAF T ' é S - O á TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching

AF 239 S

Abstract: AF 239 af239 Germanium power S 239 L siemens
Contextual Info: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

Contextual Info: SIEMENS PNP Silicon Darlington Transistors BCV 28 BCV 48 • For general AF applications • High collector current • High current gain • Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 4 3 Package1)

Contextual Info: SIEMENS C166-Family of High-Performance CMOS 16-Bit Microcontrollers C 161R I Preliminary C161RI 16-Bit Microcontroller • High Perform ance 16-bit CPU with 4-Stage Pipeline • 125 ns Instruction Cycle Tim e at 16 MHz CPU Clock • 625 ns Multiplication 1 6 x 1 6 bits , 1.25 (xs Division ( 3 2 /1 6 bit)

Contextual Info: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme, ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

Contextual Info: SIEMENS BUZ 385 SIPMOS Power Transistor • N channel • Enhancement mode V’ICfc'58 2 é 3 • FREDFET Pirn Pin 2 G Type BUZ 385 Vds 500 V 1D 9A ^DS on 0.8 Q Pin 3 D S Package Ordering Code TO-218AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage

Contextual Info: SIEMENS NPN Silicon AF Transistors BCX 54 . BCX 56 Features • • • • For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCX 51 . BCX 53 PNP Type Marking Ordering Code (tape and reel)