BSS88 Search Results

interruptor

Abstract: MBB relay MBB692 Philips MBB BSS88
Contextual Info: 711062b 00ti7ô73 T3T Philips Sem iconducto PHIN Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSS88 Q UICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL PARAMETER MAX. UNIT 230 V mA V ds draln-source voltage

transistor smd AsG

Abstract: BSS88 M7 SMD DIODE MARKING
Contextual Info: BSS88 In fin e o n technologias SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^GS m = 0-8.2.0V Type Vbs BSS88 240 V Type BSS88 BSS88 BSS88 Ordering Code Q62702-S287 Q62702-S303 Q62702-S576 0.25 A B DS(on) Package

Contextual Info: b7E D • Philips Sem iconductors_ bbS3R31 Q023t104 477 HIAPX N AUER PHILIPS/DISCRETE Product specification N-channel enhancement mode vertical D-MOS transistor FE A T U R E S BSS88 Q U IC K R E F E R E N C E DATA • Direct interface to C-M OS, TTL, etc.

BSP87

Abstract: bsp296 l BSS125 bss149 to92d
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Characteristics T( =25°C M axim um Ratings N = N Channel P = P Channel V BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135

BSS87

Abstract: BSP315 SOT223 BSP171 BSS125
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

GFE 88 DIODE

Contextual Info: SIEMENS BSS 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode 1 , • Logic Level 1 ' ^GS th = 0.8.2.0V ¿ 3 ^ VPT05I58 Pin 1 Type BSS 88 VDS 240 V b 0.25 A Type BSS 88 BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S454 Q62702-S287 Q62702-SS03

Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs P-CHANNEL VERTICAL D-MOSFETS ratinas typ number V DS max. V Ptot1) max. (mW) _ V QS(th) R DS(on) max. (mA) min. (V) max. (V) max.

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

Sot23 SL6

Abstract: BSS315 siemens sot223 BSP296N BSS100 BSS125 BSP129 BSP17 BSP89 BSS129
Contextual Info: SIEMENS AKTIE NGE SELLSCHAF bOE D Ö235b05 0045424 77T « S I E G SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Maxim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP125 BSP129* BSP135* BSP149*

siemens Transistoren

Abstract: induktive triac ansteuerung smd transistors SIPMOS application note BSS98 equivalent Siemens Halbleiter Bauelemente Siemens Halbleiter
Contextual Info: Technische Angaben Technical Information SIEMENS SIPMOS Kleinsignal-Bauelemente SIPMOS® Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

240v n-channel depletion mosfet

Abstract: idec zener barrier zener diode application transistor t13 ZENER DIODE t2 schematics switched power supply ac dc bridge 3417 npn transistor t12 BSS159 fet N-Channel transistor 250V DS
Contextual Info: ICs for Communications Analog Network Interface Circuit ANIC PSB 4450 Version 1.2 PSB 4451 Version 1.2 Understanding The External Components of The ANIC Chipset Application Note 10.99 PSB 4450 Revision History: Current Version: 10.99 Previous Version: N.A:

BF247A

Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

IL311ANM

Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.

marking FJs

Abstract: BSS88
Contextual Info: SIEMENS BSS 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type BSS 88 ^DS 240 V Type BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S287 Q62702-S303 Q62702-S576 h 0.25 A ffDS(on) 8& Package Marking

2N7002LT

Abstract: BSS124 BSS295 BSS297 BSS88 ZVN2120 BSS-295
Contextual Info: ПОЛУПРОВОДНИКОВЫЕ ПРИБОРЫ Транзисторы •Маломощные полевые n-канальные транзисторы Обозначение КП214А9 КП501А КП501Б КП501В КП502А КП504А КП504Б КП504В

buz350 mosfet

Abstract: DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Clsa Max (V) Max JF) tr Max (s) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 IAFJ240 BUZ37 BUZ31 BUZ34

AN97055

Abstract: Bi-directional level shifter for I2C-bus and other systems BSN10 Philips DATA Handbook sc07 voltage level shifter 3V to 5V BSN20 to92 80C51 BSN20 BSS83 BSS88
Contextual Info: APPLICATION NOTE Bi-directional level shifter for I²C-bus and other systems. AN97055 Philips Semiconductors Bi-directional level shifter for I²C-bus and other systems. Application Note AN97055 Abstract With a single MOS-FET a bi-directional level shifter circuit can be realised to connect devices with different

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

philips bsd215

Abstract: BST110 BF909WR
Contextual Info: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment

mccb 60947-2 max zs

Abstract: memshield 2 MFL1003 bs88 zs levels project on dol starter wiring 18000 rpm DC motor wiring diagram dol motor starter 60947-2 MAX EARTH LOOP IMPEDANCE Eaton MCB Eaton 60947-2 mccb
Contextual Info: 31258 MEM The Guide 1/7/03 16:02 Page 1 MEM Circuit Protection & Control The Guide to Circuit Protection & Control 2003 Issue Technical Support for Electrical Installations 31258 MEM The Guide T H E 1/7/03 16:02 S O U R C E Page 2 O F C I R C U I T P R O T E C T I O N