BSS89 Search Results

transistor scans sheet

Abstract: BSS89 B3 transistor
Contextual Info: V> EL J I BSS89 m ^53*124 ÜD7ÛÛ25 4ÖM I SIC3 NAPC/PHILIPS SEMICOND FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 O R DATA SH EET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as

Contextual Info: BSS89 In fin e o n technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level * W = ° - 8- 2 0 V Type Vbs t flDS on) Package Marking BSS89 240 V 0.3 A en TO-92 SS89 Typ* BSS89 BSS89 BSS89 Ordering Code Q62702-S519 Q62702-S619

Contextual Info: BSS89 _ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as

ap 4466

Abstract: transistor 359 AJ BSS89 APPLICATION
Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSS89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13b Philips Semiconductors 1998 Apr 24 PHILIPS PHILIPS Philips S e m ico nd uctors

Contextual Info: BSS89 _ J V_ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line

BSS89

Contextual Info: BSS89 _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line

Contextual Info: BSS89 ' i _ vv FOR DETAILED INFORMATION! SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as

BSS89

Abstract: BSS89 APPLICATION BP317 MBB692
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13b 1998 Apr 24 Philips Semiconductors Product specification N-channel enhancement mode

BSS89 APPLICATION

Abstract: bss89 BSS89/D
Contextual Info: MOTOROLA Order this document by BSS89/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement 2 DRAIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage VDSS 200 Vdc Gate-Source Voltage — Continuous — Non-repetitive tp < 50 p.s

BSS89

Abstract: BSS89/D
Contextual Info: IfiE j> SILICONIX INC m Ö2S4735 0014043 b ÆTi?c_onix • « BSS89 incorporated N-Channel Enhancem ent-M ode MOS Transistor T-2J7-ZS PRODUCT SUMMARY BOTTOM VIEW TO-92-18 V BR DSS (V) TDS(ON) (fl) Id (A) PACKAGE 200 6 0.3 TO-92 CD 1 GATE 2 DRAIN 3 SOURCE

BSP87

Abstract: bsp296 l BSS125 bss149 to92d
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Characteristics T( =25°C M axim um Ratings N = N Channel P = P Channel V BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135

sot23 BS170

Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120

KAG TRANSISTOR

Contextual Info: BSS89 CASE 29-04, STYLE 7 TO-92 TO-226AA M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rc e V o lta g e VDSS 200 Vdc G a te -S o u rc e V o lta g e Vg s ±20 V dc m Adc 'd m 400 800 Pd 350 mW m W -’X D ra in C u rre n t — C o n tin u o u s (1 1

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSS89 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N -ch an n e l e n h a n c e m e n t m o d e v e rtic a l D -M O S tra n s is to r in a T O -9 2 v a ria n t en ve lo pe . D esigned p r im a r ily as

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

MPF89

Abstract: BSS89 "cross reference" VN2410L "cross reference" MPF910 VN0300L "cross reference" VN10LM "cross reference" MPF960 "cross reference" Mosfet 2n7000 MPF6661 "cross reference" BSS89
Contextual Info: Small-Signal TMOS MOSFETs Table 17 — TMOS Switches and Choppers T he follow ing is a listing of sm all-sig na l T M O S d e vice s that are in te nd ed for sw itch ing and ch o p p e r applicatio ns. vDss C iS8 Crs8 *on »off V Min PF Max PF Max ns Max ns

stencil

Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

bs170 replacement

Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)