3202 a ic
Abstract: C5LT2
Contextual Info: S-812C Series HIGH OPERATING VOLTAGE CMOS VOLTAGE REGULATOR www.sii-ic.com Rev.6.1_00 Seiko Instruments Inc., 2001-2011 The S-812C Series is a high-withstand voltage regulator IC which is developed by using the CMOS technology. This IC is suitable for applications which require withstand because its maximum voltage for operation is as high
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BFQ58
Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S
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6535b0500m5mgflbf199o-92d+13bf599bf240bf840bf241bfq58bfq57bft99rf bipolar transistorsbft97bfp194bft65bfr34abf450
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2N5248
Abstract: BC264C 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104 BC264A
Contextual Info: N -Channel Junction Field Effect Transistors GENERAL PURPOSE M A X IM U M R A T IN G S ' dss Im A l TYPE VG S off (V Y fs (mm hos) Ciss Crss NF (pF) (pF) (dB) max max max CASE NO. Pd (mW) b v gss (V) m in BC264A BC264E! BC264C BC264D TO-92DE TO-92DE TO-92DE
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3VD156600YL
Abstract: 1N60SS
Contextual Info: 3VD156600YL 3VD156600YL 高压MOSFET芯片 描述 ¾ 3VD156600YL为采用硅外延工艺制造的N沟道增强 型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 1 ¾ 较高的雪崩能量； 3 ¾ 漏源二极管恢复时间快；
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3vd156600yl3vd156600yln600vmoso-92dt-3l+51n60ss250ua250uavds30vvds600vvgs
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2n5248
Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE
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induction cooker fault finding diagrams
Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
Contextual Info: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120
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03frontinduction cooker fault finding diagramsenamelled copper wire swg tableac digital voltmeter using 7107+7wiring diagram iec320 c14 inlet male power socket fuse switchdb 3202 diacsiemens mkl capacitoryy63tvarta cr123ahxd buzzerlt700 transformer
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diode S6 78A
Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14
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o-92tlo-92ddiode s6 78atransistor pnp ba rt sot 89+8mmic cea sot36332n45transistor 6bwtransistor bc 545bf1012s6bw sot-23up 6103 s86bw 12 transistor
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to92c
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 High Voltage Transistors Typ e M axim um Ratings N=NPN P=PNP BF420 BF421 BF422 BF423 BFP22 BFP23 BFP25 BFP26 N P N P N P N P V CEO V 'c m.\ Pt mW 300 300 250 250 200 200 300 300 50
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2n3819
Abstract: bf245b
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. CASE MAXIMUM RATINGS BV css P4 mW (V) loss (mA) min max Y* (nimbos) min max Vcsf««) (V) min max Cte (pF) max (pF) max Cr„ NF (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11+ 1.2+ 1.2+ 1.2+ 1.2+
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Contextual Info: S-808xxC Series www.sii-ic.com SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR Rev.6.1_00 Seiko Instruments Inc., 2001-2011 The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The detection voltage is fixed internally with an accuracy of ±2.0%. Two output forms, Nch open-drain and CMOS
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Contextual Info: N - Channel Junction Field Effect Transistors SWITCHING/CHOPPING MAXIMUM RATINGS TYPE NO. Pd VGS ofl (mA) (V) BVGSS (mW) (V) min max rds(on) Ciss Crss ton toff (ohms) (PF) (PF) (bs) (ns) min IMI m ar max max max IMI 3 0.5 0.5 4 10 5 3 10 6 30 50 100 100 220
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2n3966o-92ddo-72dh2n4861a+42n55552n56382n56392n5640
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BF 414
Abstract: to92d bc 640 ce bc 630
Contextual Info: Transistoren Transistors GaAs MMICs Breitbandverstärker Type GaAs MMICs Broadband Amplifiers Maximum Ratings Characteristics {TA = 25 °C lap mA G dB 2 160 2 160 Vs V Ptot • CGY 21 6.0 ■ CGY 31 6.0 W F ' dB 21.0 1.5 3.9 19 100 . 900 TO-12 48 18.0 2.0
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Contextual Info: 3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
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Contextual Info: S-808xxC Series www.sii-ic.com SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR Rev.6.1_00 Seiko Instruments Inc., 2001-2011 The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The detection voltage is fixed internally with an accuracy of ±2.0%. Two output forms, Nch open-drain and CMOS
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to92c
Abstract: MPSA 506 transistor transistor bf 422 NPN smpsa42 bc 617 transistor equivalent to92d BC368N BF 414 BB 112 BC338N
Contextual Info: Selection Guide For complete information and data sheets please contact us on our internet homepage Leaded Components Varactor Diodes leaded Type Characteristics (TA = 25 °C) Maximum Ratings VR IF CT
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de/semiconductor/products/35/35o-92ao-92bo-92d+10to92cmpsa 506 transistortransistor bf 422 npnsmpsa42bc 617 transistor equivalentto92dbc368nbf 414bb 112bc338n
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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do-15do-201ado-220act0202-3+12stgp3nb60hdstgp7nb60hdbzx85c12vtoshiba 2n3055bta41-600b applicationbta41-600b firing circuittab 429 h toshibabzx85c20vscr tyn612 pin configurationpicaxetyn612 specification2sa1085e
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BC182 BC547
Abstract: bc557 TO92C
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328
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transistors BC 639 029
Abstract: BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337
Contextual Info: Selection Guide Diodes leaded For complete information and data sheets please refer to our Data Book I and II, Small Signal Semiconductor Edition 03.92. RF-Schottky Diodes for Professional Applications Type Frequency Band GHz Maximum Ratings Characteristics (TA = 25 °C)
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817b 4 pin ic
Abstract: ic 817b S-817B40AMC-CXD S-817B18AMC-CWHT2x
Contextual Info: S-817 Series SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR www.sii-ic.com Rev.6.1_00 Seiko Instruments Inc., 1999-2011 The S-817 Series is a 3-terminal positive voltage regulator, developed using CMOS technology. Small ceramic capacitors can be used as the output capacitor, and the S-817 series provides stable operation with low loads
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2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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o-92d2907a pnp bipolar transistorsbc 148 transistor datasheettransistor bc 450 pnp+7diode s6 78atransistors bf 517bfg sot89bc 327 sot 23bas20 sot23diode ta 70/04bcp 846
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TO-92DD
Abstract: BC264B BC264A BC264C BC264D BF246A BF246B BF246C BF247A BF247B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS ofF Ciss Crss NF (V) max (piO max (PF) max (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11 + 1.2+ 1.2+ 1.2+ 1.2+ 3.5+ 2 2 2 2 Pd (mW) BVGSS (V) min max (mmhos) min
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2N4092
Abstract: NF510
Contextual Info: N - Channel Junction Field Effect Transistors SWITCHING/CHOPPING TYPE NO. CASE MAXIMUM RATINGS BVgss Pi mW (V) (mA) min max Vßs(«n) r<W«) C„. (ohms) (pF) (V) min max max max 3 1 0.5 0.5 4 10 5 3 10 6 30 50 100 100 220 10 10 10 15+ 6 4 2 0.5 5 2 10 5
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BFT98
Abstract: BF255 transistors bfs17p BFQ71 BF199 BFS55A
Contextual Info: RF Bipolar Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors V r CEO l c N=NPN /t NF P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73S BFQ74
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bf199bf240bf241bf254+10bf255bf414bf450bf451bf506bf606abft98transistors bfs17pbfq71bfs55a
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BSP87
Abstract: bsp296 l BSS125 bss149 to92d
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Characteristics T( =25°C M axim um Ratings N = N Channel P = P Channel V BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135
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