250UA Search Results

Contextual Info: PRELIMINARY MX23C321 O INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max.) • Current - Operating :60mA - Standby:250uA

Contextual Info: 1N4103 Nom zener voltage:9.1V; low level zener diode low current: 250uA - low noise 1. Page 1 of 1 Enter Your Part # Home Part Number: 1N4103 Online Store 1N4103 Diodes Nom zener voltage:9.1V; low level zener diode low Transistors current: 250uA - low noise

1n4101-1

Abstract: 1N4627
Contextual Info: Xw SGS-THOMSON iHG 1N 4614->1 N 4627 1N 4 0 9 9 - 1N 4118 ZENER DIODES • VOLTAGE RANGE : 1,8V TO 27V DESCRIPTION Designed for 250mW applications requiring low leak­ age low noise. Zener impedance and Zener voltage specified for low level operation at lzt = 250uA.

B08 REGULATOR

Abstract: 7440430022 TS3410 inductor switching mosfet pwm schematic buck converter
Contextual Info: TS3410 1A / 1.4MHz Synchronous Buck Converter SOT-25 Pin Definition: 1. EN 2. Ground 3. Switching Output 4. Input 5. Feedback General Description TS3410 is a high efficiency monolithic synchronous buck regulator using a constant frequency, current mode architecture. The device is available in an adjustable version. Supply current with no load is 250uA and drops to <1uA

Contextual Info: ICE15N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE22N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.14Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE13N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 13A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE8N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 8A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.38Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE4N73D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 730V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE15N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.23Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE6N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 6A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE60N150 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 25A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE4N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 700V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE60N130FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 23A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

MX23C3210

Contextual Info: PRELIMINARY MX23C3210 INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max.) • Current - Operating:60mA - Standby:250uA

Contextual Info: PRELIMINARY MX230321 O INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max. • Current - Operating:60mA - Standby:250uA

Contextual Info: 1N4099 Nom zener voltage:6.8V; low level zener diode low current: 250uA - low noise 7. Page 1 of 1 Enter Your Part # Home Part Number: 1N4099 Online Store 1N4099 Diodes Nom zener voltage:6.8V; low level zener diode low Transistors current: 250uA - low noise

Contextual Info: ICE60N600D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 7A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.52Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE22N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.14Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE6N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 6A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE60N800D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 5A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE15N73FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 730V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE15N73 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 730V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: ICE10N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.28Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability