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    Bourns Inc MF-R250U

    Resettable Fuses - PPTC PTC 2.5A 30V RADIAL LEADED UNCOATED
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MF-R250U 7,525
    • 1 $0.48
    • 10 $0.44
    • 100 $0.29
    • 1000 $0.27
    • 10000 $0.25
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    Littelfuse Inc 0242.250UAT1

    Fuses with Leads - Through Hole 250V .25A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 0242.250UAT1 334
    • 1 $7.33
    • 10 $5.84
    • 100 $4.35
    • 1000 $3.06
    • 10000 $3.05
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    Littelfuse Inc 0242.250HAT1

    Fuses with Leads - Through Hole 250V250mA BARRIER AMMO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 0242.250HAT1 90
    • 1 $7.47
    • 10 $6.20
    • 100 $3.74
    • 1000 $3.26
    • 10000 $3.26
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    Schneider Electric JLS36250UARD20

    Circuit Breakers MOLDED CASE CIRCUIT BREAKER 600V 250A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics JLS36250UARD20
    • 1 $11054.60
    • 10 $11054.60
    • 100 $11054.60
    • 1000 $11054.60
    • 10000 $11054.60
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    Bourns Inc MF-RX012/250U-A5-0

    Resettable Fuses - PPTC 0.12A 60V 7ohm Radial
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MF-RX012/250U-A5-0
    • 1 -
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    • 10000 $0.43
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    250UA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PRELIMINARY MX23C321 O INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max.) • Current - Operating :60mA - Standby:250uA


    OCR Scan     		MX23C321 32M-BIT 8/16-BIT 150ns 250uA 500mil) MX23C3210MI-15 A0-A20 D0-D14 PDF

    Contextual Info: 1N4103 Nom zener voltage:9.1V; low level zener diode low current: 250uA - low noise 1. Page 1 of 1 Enter Your Part # Home Part Number: 1N4103 Online Store 1N4103 Diodes Nom zener voltage:9.1V; low level zener diode low Transistors current: 250uA - low noise


    Original     		1N4103 250uA 1N4103 DO-204AA com/1n4103 PDF

    1n4101-1

    Abstract: 1N4627
    Contextual Info: Xw SGS-THOMSON iHG 1N 4614->1 N 4627 1N 4 0 9 9 - 1N 4118 ZENER DIODES • VOLTAGE RANGE : 1,8V TO 27V DESCRIPTION Designed for 250mW applications requiring low leak­ age low noise. Zener impedance and Zener voltage specified for low level operation at lzt = 250uA.


    OCR Scan     		250mW 250uA. 1n4101-1 1N4627 PDF

    B08 REGULATOR

    Abstract: 7440430022 TS3410 inductor switching mosfet pwm schematic buck converter
    Contextual Info: TS3410 1A / 1.4MHz Synchronous Buck Converter SOT-25 Pin Definition: 1. EN 2. Ground 3. Switching Output 4. Input 5. Feedback General Description TS3410 is a high efficiency monolithic synchronous buck regulator using a constant frequency, current mode architecture. The device is available in an adjustable version. Supply current with no load is 250uA and drops to <1uA


    Original     		TS3410 OT-25 TS3410 250uA B08 REGULATOR 7440430022 inductor switching mosfet pwm schematic buck converter PDF

    Contextual Info: ICE15N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE15N65FP 250uA O-220 100us 0E-06 0E-04 0E-02 0E-00 PDF

    Contextual Info: ICE22N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.14Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE22N60W 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Contextual Info: ICE13N65FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 13A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE13N65FP 250uA O-220 0E-06 0E-04 0E-02 0E-00 PDF

    Contextual Info: ICE8N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 8A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.38Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE8N70FP 250uA O-220 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Contextual Info: ICE4N73D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 730V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE4N73D 250uA O-252 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Contextual Info: ICE15N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.23Ω Typ Qg VDS = 480V 59nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE15N60W 250uA O-247 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Contextual Info: ICE6N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 6A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE6N70FP 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Contextual Info: ICE60N150 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 25A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE60N150 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Contextual Info: ICE4N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 700V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE4N70 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Contextual Info: ICE60N130FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 23A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.13Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE60N130FP 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    MX23C3210

    Contextual Info: PRELIMINARY MX23C3210 INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max.) • Current - Operating:60mA - Standby:250uA


    Original     		MX23C3210 32M-BIT 8/16-BIT 150ns 250uA 500mil) MX23C3210MI-15 D15/A-1 PM0526 MX23C3210 PDF

    Contextual Info: PRELIMINARY MX230321 O INDUSTRIAL GRADE 32M-BIT MASK ROM 8/16-BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 150ns (max. • Current - Operating:60mA - Standby:250uA


    OCR Scan     		MX230321 32M-BIT 8/16-BIT 150ns 250uA 500mil) MX23C3210MI-15 150ns 44pinSOP A0-A20 PDF

    Contextual Info: 1N4099 Nom zener voltage:6.8V; low level zener diode low current: 250uA - low noise 7. Page 1 of 1 Enter Your Part # Home Part Number: 1N4099 Online Store 1N4099 Diodes Nom zener voltage:6.8V; low level zener diode low Transistors current: 250uA - low noise


    Original     		1N4099 250uA 1N4099 DO-204AA com/1n4099 PDF

    Contextual Info: ICE60N600D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 7A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.52Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE60N600D 250uA O-252 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Contextual Info: ICE22N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.14Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE22N60 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Contextual Info: ICE6N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 6A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE6N70 250uA O-220 16Forward 100us 0E-06 0E-05 0E-04 0E-03 0E-02 PDF

    Contextual Info: ICE60N800D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 5A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE60N800D 250uA O-252 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Contextual Info: ICE15N73FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 730V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE15N73FP 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Contextual Info: ICE15N73 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 15A Max V BR DSS rDS(ON) ID = 250uA 730V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE15N73 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Contextual Info: ICE10N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.28Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE10N60 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF