250UA Search Results

UC38xx

Abstract: unitrode U-128 BA1610 UC3825 application note UC28xx
Contextual Info: IN TEG R A T ED CIR C UITS U C 1823A ,B /1825A ,B UNITRODE U C 2823A , B /2825A,B U C 3823A ,B /3825A ,B High Speed PWM Controller FEATURES DESC RIPTIO N “Bold Type” Denotes improved or new features • Improved versions of the UC3823/UC3825 PWMs The UC3823A & B and the UC3825A & B family of PWM control ICs are Improved versions of the standard

tc258c

Contextual Info: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA VI < D ISC RETE/O PTO TOSHIBA SEMICONDUCTOR T o s h ib a DE I TEHTEiSD GGlbflia 99D 16812 D T -B 9 -1 3 FIELD EFFECT TRANSISTOR Y T F *4 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA TT-MOS I ) HIGH SPEED, HI G H C U RRENT SWITCHING APPLICATIONS.

12v 1200mah battery NiMH

Abstract: 12v 1200mah nimh battery db opera 415 12v 1200mah nimh 12v 1200mah battery
Contextual Info: y UCC2956 UCC3956 mmm UNITRODE Switch Mode Lithium-Ion Battery Charger Controller FEATURES Precision 4.1V Reference 1% High Efficiency Battery Charger Solution Average Current Mode Control from Trickle to Over Charge Resistor Programmable Charge Currents

LD33A

Abstract: YTFP153 uc 600
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt - YTFP153 MOSI INDUSTRIAL APPLICATIONS Unit In mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&0M AX . 0S.2ÌO.S V. DRIVE APPLICATIONS. iSL FEATURES:

YTFP451

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:

Contextual Info: TOSHIBA {D IS CRETE /OPT O} DE • TDTTSSD □□It.ñOñ 4 99D 16808 9097250 TOSHIBA <DISCRETE/OPTO> SEMICONDUCTOR ¿/ashihi I Ti TO SH IBA F IE L D EFFEC T D'F-Sq-IS TRA N SISTO R Y T F 2 5 2 S IL IC O N TECHNICAL DATA N CHANNEL MOS T Y P E ff-M O S H

DIODE B12

Contextual Info: TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V 30 Features RDS(on)(mΩ) ID (A) 15 @ VGS = 10V 11 24 @ VGS = 4.5V 10 Block Diagram ●

A07 mosfet

Abstract: Dual p-Channel MOSFET SOP8 P-Channel MOSFET code 1A P-CHANNEL Dual N & P-Channel Dual P-Channel MOSFET 30v Dual N & P-Channel MOSFET Dual N
Contextual Info: TSM4544D 30V Dual N & P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 5. Drain 2. Gate 1 6. Drain 3. Source 2 7. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V 1 1 2 2 N-Channel 30 P-Channel -30 Features RDS(on)(mΩ) ID (A) 30 @ VGS = 10V 7 44 @ VGS = 4.5V

TSM2NB60

Abstract: mosfet 600V 2A
Contextual Info: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced

Contextual Info: TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 12 @ VGS =10V 7.8 17 @ VGS =4.5V 7 Block Diagram

6968e

Abstract: TF6968E D002P 65a3
Contextual Info: TF6968E Dual N-Channel MOSFET – ESD Protected VDS=20V RDS ON , VGS # 9 P RDS(ON), VGS # 9  P RDS(ON), VGS # 9  P ID = 6.5A Features • Advanced trench process technology • Specially designed for Li-lon battery packs • Designed for battery switch applications

fr 3910

Contextual Info: TSM190N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 75 4.2 @ VGS =10V 190 Block Diagram Advanced Trench Technology Low RDS(ON) 4.2mΩ (Max.) Low gate charge typical @ 160nC (Typ.)

Contextual Info: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

TSM40N03P

Contextual Info: TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 4.5 @ VGS =10V 19 5.8 @ VGS =4.5V 16 Block Diagram

A12 diode

Abstract: MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v
Contextual Info: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This

TSM10N06

Contextual Info: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

TSM2307CX

Abstract: TSM2307CXRFG TSM2307 MARKING PA TR SOT-23 A1 SOT-23 MOSFET P-CHANNEL
Contextual Info: TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 95 @ VGS = -10V -3 140 @ VGS = -4.5V -2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

Contextual Info: MA3008K10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3008K is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: CSD17510Q5A www.ti.com SLPS271G – JULY 2010 – REVISED SEPTEMBER 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17510Q5A PRODUCT SUMMARY FEATURES 1 • • • • • • • 2 Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated

Contextual Info: CSD19535KCS www.ti.com SLPS484 – JANUARY 2014 CSD19535KCS, 100 V N-Channel NexFET Power MOSFET Check for Samples: CSD19535KCS FEATURES 1 • • • • • • • 2 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating

Contextual Info: MA3018M60000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3018M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3010J10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3010J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

ZXMP6A13FTA

Abstract: ZXMP6A13FT ZXMP6A13F
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) TA = 25°C 400mΩ @ VGS = -10V -1.1A 600mΩ @ VGS = -4.5V -0.9A -60V Mechanical Data Description and Applications

Contextual Info: DMC2004DWK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage VGS th < 1V Low Input Capacitance Fast Switching Speed