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    ICE22N60W Search Results

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    Contextual Info: ICE22N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.14Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


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    ice22n60w250uao-220100us+60e-060e-050e-040e-030e-020e-01 PDF