ICE22N60W Search Results
ICE22N60W Datasheets Context Search
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Contextual Info: ICE22N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 22A Max V BR DSS rDS(ON) ID = 250uA 650V Min VGS = 10V 0.14Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability |
Original |
ICE22N60W 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 |