ICE60N800D Search Results
ICE60N800D Datasheets Context Search
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Contextual Info: ICE60N800D Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 5A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability |
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ice60n800d250uao-252100us+6 |