BF246B Search Results

Contextual Info: BF246B N-Channel Switch BF246B N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. • Sourced from process 51. • See J111 for characteristics. TO-92 DGS 1. Drain 2. Gate 3. Source

BF247C

Abstract: BF246A BF246B Field-Effect Transistors BF247A BF246C BF247B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors

NJ450

Abstract: nj26 interfet INTERFET BF256B
Contextual Info: F8 9 -9 7 Small Outline Surface Mount Package Devices N-CH ANN EL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Device Type BVg s S V gS(OFF) >g s s Min (V) m Max (nA) SMP BF244C SMP BF246A SMP BF246B SMP BF246C SMP BF256A -3 0 -2 5 -2 5 -2 5 -3 0 -1.0 -1.0

BF247C

Abstract: bf246a MAM257 bf247a BF246C BF246B
Contextual Info: Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF246A; BF246B; BF246C; BF247A; BF247B; BF247C FEATURES PINNING • Interchangeability of drain and source connections PIN • High lDSs range SYMBOL DESCRIPTION

bf246c

Abstract: BF247A
Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors

BF246B

Abstract: J111
Contextual Info: BF246B N-Channel Switch BF246B N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. • Sourced from process 51. • See J111 for characteristics. TO-92 DGS 1. Drain 2. Gate 3. Source

BF246A

Abstract: BF247C BF247A BF247B BF246C BF247 BF246B
Contextual Info: Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF246A; BF246B; BF246C; BF247A; BF247B; BF247C FEATURES PINNING • Interchangeability of drain and source connections • High lDSS range PIN SYMBOL DESCRIPTION

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2n5248

Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE

F246A

Abstract: bf246a BF247B BF246
Contextual Info: BF246A,B CASE 29-04, STYLE 22 TO-92 TO-226AA T , BF247B CASE 29-04, STYLE 5 TO-92 (TO-226AA) M A X IM U M RATINGS Rating Sym bol Value U nit D rain-S ource Voltage VDS i 25 Vdc D ram -G ate Voltage vdg 25 Vdc G ate-Source Voltage VGS 25 Vdc Id 100 mAdc

BF247

Abstract: BF246 bf246a BF247A TO226AA BF247B BF246C bf246 motorola
Contextual Info: BF246,A,B,C A CASE 29-04, STYLE 22 TO-92 TO-226AA ¿ ^C j‘ BF247,A,B,C CASE 29-04, STYLE 5 TO-92 (TO-226AA) M A X IM U M RATINGS R a tin g Sym bol V a lu e U n it D ra in -S o u rc e Voltage Vd S ±25 Vdc D ra m -G a te V oltage vdg 25 V dc G a te -S o u rce Voltage

stencil

Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

bs170 replacement

Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)

transistor bc237 bc337

Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage

BC237

Abstract: MPS-A70 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage

bc182 equivalent 2n2907

Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO

transistor MPS5771

Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit

P2d MARKING CODE

Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage