BC30 Search Results

BC557 pnp transistor

Abstract: BC551 BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A
Contextual Info: T092 PLASTIC PACKAGE TRANSISTORS PNP Typ» No. VC80 (V) Min 50 BC307B {Ta=25°C, U n le s s O th e rw is e S p e c ifie d ) E le c tric a l C h a ra c te ristic s M a x im u m R a tin g s VCEO VEBO lC0O (V) Min (V) Min (uA) Max hFE ^ce (VI 45 lc & (mAl

BC307

Contextual Info: DC COMPONENTS CO., LTD. BC307 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Collector 2 = Base 3 = Emitter

pin configuration Bc327

Abstract: BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A BC557C
Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50

BC308

Abstract: KBC308 Grade
Contextual Info: SEMICONDUCTOR BC308 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking No. 1998. 6. 23 816 K 1 2 3 B BC308 2. Marking 4 Item Marking Description Device Name BC308 BC308 Lot No. 816 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week KEC K KEC CORP.

BC304-6

Contextual Info: BC304-6 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016)

BC300

Abstract: 120M
Contextual Info: BC300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

BC300-4

Abstract: 120M BC300
Contextual Info: BC300-4 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)

bc307

Abstract: BC309 BC308
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter

BC302-5

Abstract: 120M BC302
Contextual Info: BC302-5 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016)

120M

Abstract: BC300-6
Contextual Info: BC300-6 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)

BC307B

Abstract: BC307 BC307C 308C BC308 BC308C
Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage

Contextual Info: BC300R - Power Supply/Battery Enclosure Rev.฀BC300R฀-฀04162013 Specifications: •฀ . •฀ Fits฀two฀ 2 ฀12VDC/7AH฀batteries. •฀ Product฀weight:฀฀5.6฀lbs.฀(2.54฀kg).

Contextual Info: BC300 - Power Supply/Battery Enclosure Rev.฀BC300฀-฀04162013 Specifications: •฀ . •฀ Fits฀two฀ 2 ฀12VDC/7AH฀batteries. •฀ Product฀weight:฀฀5.6฀lbs.฀(2.54฀kg).

T BC309

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307

BC307

Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9

bc307

Abstract: BC308 BC307 complementary
Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC307 VCEO=-45V. ・Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).

BC307B

Abstract: BC307
Contextual Info: BC307B, BC307C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –45 Vdc Collector-Base Voltage VCBO –50 Vdc Emitter-Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

BC303

Abstract: transistor bc303 BC304
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EXPITAXIAL PLANAR SILICON TRANSISTORS BC303, BC304 TO-39 Metal Can Package PNP SILICON LOW-AND MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

BC307B

Abstract: BC307BRL1G BC30 BC307BG BC307BRL1 BC307BZL1 BC307BZL1G BC307C BC307CG 31BC30
Contextual Info: BC307B, BC307C Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 Vdc Collector − Base Voltage VCBO −50 Vdc Emitter − Base Voltage

BC307

Contextual Info: Transistors BC307 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • LOW NOISE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Collector-Emitter Voltage Unit Rating Symbol Characteristic VcES Collector-Emitter Voltage -5 0 V -4 5 V -5 -1 0 0 500 150 —5 5 ~ 1 5 0

2SA708 NEC

Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03

bc307

Abstract: BC308
Contextual Info: BC307/308/309 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous

Contextual Info: BC302 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)

Contextual Info: BC303-5 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016)