BC307B
Abstract: BC307 BC307C 308C BC308 BC308C
Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage
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BC307B
Abstract: BC306C BC307C BC307 BC308C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC307 BC307B BC307C BC308C Amplifier Transistors PNP Silicon COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector-Base Voltage Symbol BC307, B, C BC306C Unit VCEO -45 -25 Vdc VCBO -50 -30 Vdc
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BC307
Abstract: BC307B BC307C BC308C BC307 Motorola
Contextual Info: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C
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Characteristic curve BC107
Abstract: TRANSISTOR 308B BC237 BC307 BC108 characteristic bc307b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector – Emitter Voltage
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bc307bc307bbc307cbc308c+8226aajunc218amsc1621t1msc2404characteristic curve bc107transistor 308bbc237bc108 characteristic
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CBC307B
Abstract: C307B C307 307c BC307 BC307B T BC309
Contextual Info: BC307,B,C BC308C BC309,B MAXIMUM RATINGS Symbol BC307 BC308C BC309 C o lle c to r -E m itte r V o lta g e VCEO -4 5 -2 5 -2 5 Vdc C o lle c to r-B a s e V o lta g e VCBO -5 0 -3 0 -3 0 V dc Rating CASE 29-04, STYLE 17 TO-92 TO-226AA vebo -5 .0 V dc C o lle c to r C u rre n t — C o n tin u o u s
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bc307b
Abstract: bc307 BC308C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C v CEO -45 -25 Vdc Collector-Base Voltage VCBO -50 -30 Vdc Emitter-Base Voltage Collector-Emitter Voltage
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309B
Abstract: BC306C C308C bc307b
Contextual Info: BC307,B,C BC308C BC309B MAXIMUM RATINGS Sym bol BC307 BC308C BC309 Unit C o llecto r-Em itter Voltage VCEO -4 5 -25 -2 5 Vdc C o llecto r-Base Voltage VCBO -5 0 -30 -3 0 E m itter-B ase Vo ltage v ebo Rating Vdc - 5 .0 Vdc CASE 29-04, STYLE 17 TO-92 TO-226AA
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BC307D
Abstract: BC307 BC309B 308C BC308C BC309 BC309 Motorola
Contextual Info: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307,B,C PNP Silicon BC308C BC309B COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 307 BC 308C BC 309 Unit Collector – Emitter Voltage VCEO –45 –25
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BC307B
Abstract: BC307 BC308C 308C BC307C BC308
Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage
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BC307B
Abstract: BC307 BC307C BC308 PNP transistor download datasheet 308C BC308 BC308C
Contextual Info: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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transistor ZTX302
Abstract: ZTX502 transistor ztx304 BFS98 ZTX109 ZTX452 transistor MPSA06 transistor ZTX108 BC546P BC556P
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and O UTPUT ST A G ES, O SC ILLA TO RS, AND GENERAL PURPO SE
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ztx453ztx452ztx552mpsa06+13mpsa56bc546pbc556pztx451bc558bbc558ctransistor ztx302ztx502transistor ztx304bfs98ztx109transistor mpsa06transistor ztx108
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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BC237
Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
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bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
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transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
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BC237
Abstract: MPS-A70 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage
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bc182 equivalent 2n2907
Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO
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transistor MPS5771
Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit
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P2d MARKING CODE
Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage
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WT transistor
Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc
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2N5457 MOTOROLA
Abstract: 2N5457 equivalent BC237 transistor 2N5457
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc
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