ZTX451 Search Results

2TX451

Abstract: ztx450 oms 450 Q 451 ztx450 ztx550 ZTX550 F137 F139 ZTX451 ZTX551
Contextual Info: FERRANTI semiconductors ZTX450 ZTX451 NPN Si li co n Planar M e d i u m P o w e r Transistors FEATURES • High pow er dissipation: 1W a t Tarnb= 25°C • hFE specified up to 1 Amp • High fT : 200 M H z typical DESCRIPTION These are plastic encapsulated general purpose transistors

ZTX451

Abstract: ztx450 equivalent ztx450 ztx451 datasheet DSA003766
Contextual Info: ZTX450 ZTX451 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.3 Switching time VCE sat - (Volts) IB1=IB2=IC/10 VCE=-10V td,tr,tf ns 0.4 IC/IB=10

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX450 ZTX451 ISSUE 2 – MARCH 1994 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX450 ZTX451 Collector-Base Voltage VCBO

WM-61A

Abstract: C514 MSP430F2274IDA TPS61040 EFBRL37C20 x-tal 1N4148 680R BC857C MBR0530
Contextual Info: PWR TOOL LOCAL X4 2 1 5 1 2 3 JP2 JP1 4 GND FB 2 3 1 R9 GND MBR0530 D2 47K R5 JTAG 2xAAA 180K GND SW TPS61040 EN VIN IC1 GND L1 10uH + - 3 2 1 GND GND R10 680R M1 WM-61A BUZZER + - B1 VCC VCC_MIC R1 1 2 SBWTDIO GND 1 X3 2 1u C2 Q2 ZTX451 SBWTCK 2.2K R8 F GND

2SC1018

Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252

ztx451

Contextual Info: Not Recommended for New Design Please Use ZTX451 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT451 ISSUE 1 – SEPT 93 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX451 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS.

ZTX450

Abstract: T092 ZTX451
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX450 ZTX451 ISSUE 2 -MARCH 1994_ FEATURES * 60 V o lt V,CEO 1 A m p c o n tin u o u s c u rre n t P ,o t= 1 W a tt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX450 ZTX451 UNIT Collector-Base Voltage

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX450 ZTX451 ISSUE 2 -MARCH 1994_ FEATURES * 60 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t * Ptot= 1 W a t t E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: DISCONTINUED PLEASE USE ZTX751 NPN SILICON PLANAR FXT451 MEDIUM POWER TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX451 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

FXT451

Abstract: ZTX451 DSA0037530
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT451 ISSUE 1 – SEPT 93 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX451 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

ZTX450

Abstract: ZTX451 BS9365 DSA2IH00224621.
Contextual Info: NPN Silicon Planar Medium Power Transistors ZTX450 ZTX451 FEATURES • • • High power dissipation: 1W at Tamb= 2 5 °C hFE specified up to 1A High f T: 200M Hz typical DESCRIPTION These are plastic encapsulated general purpose transistors designed for small and medium

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - SEPT 93_ FEATURES * 60 Volt V CE0 * 1 A m p c o n tin u o u s current P ,o r 1 W att R EFER TO ZTX451 FO R G R A P H S ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - SEPT 93_ FEATURES » 60 Volt V,CEO 1 A m p continuous current P,o,= 1 Wa« REFER TO ZTX451 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT v CBO 80 V Collector-Emitter Voltage

Contextual Info: SbE V m T T 7 GS 7 Ô 0 Q0 7 D S 0 T23 H Z E T B T - '¿ / l- O i SEM ICO N D U CTOR DICE NPN MEDIUM POWER V CBO V CEO hFE at •CBO Min. Min. Max. at V CB Dice type Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711

ZTX450

Abstract: ZTX451
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX450 ZTX451 ISSUE 2 - MARCH 1994_ FEATURES * 60 V o lt VCE0 * 1 A m p c o n tin u o u s c u rre n t * Ptot= 1 W a tt E-Line T092 Compatible ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

ZTX751

Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

ZTX3705

Abstract: 945 MOTHERBOARD CIRCUIT diagram MPS3693 ZTX108 BCY59P MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type MPS3704\ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 MPS3706\ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P MPS3709\ ZTX3709 / MPS3710\ ZTX3710 / MPS3711 \ ZTX3711 f

BC338C

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

BC337b

Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

BC557P

Abstract: BFS60 ZTX304 MPS3645 MPS6566 ZTX551 BC182P BC546P BCY65EP BFS96
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

ZTX3904

Abstract: BFS98 MPS3645 ZTX237
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment