BC327C Search Results

Contextual Info: BC327CP Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

BC338C

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

BC337b

Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

BC338C

Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

bc177

Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE

ZTX651

Abstract: ZTX692B ZTX650 ZTX652 ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860
Contextual Info: TABLE 8 : NPN/PNP SUPER E-LINE TYPES These devices offer the ultimate performance for TO -9 2 style package. They have been designed to operate and provide useful gain at current levels up to 6 A with power dissipation capabilities in excess of 1W at 2 5 ° C ambient temperature.

2N1893

Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

180M 290

Abstract: BC157B BCY79CP 6p6p BCY79BP LOW-POWER SILICON PNP BCB07-40 bcb07 BC327BP MMBA811CB
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 BC307B5 JE9015C JE9015C TMPT813S4 BCY79 BCY79P BCY79VII BCW70 BCF70 BCF70 ~g~jgR 15 20 BCF70R BCB57B BC177P BC177PK BC307P BC307PK BC307PL BC560B ~~~7AR 25 30 1T130A KSA539 KSA707 2SA564A BCB60AR BCB60AR BCB60AR

BC337C

Abstract: bc327c BC338C bc337b 2N1131 2N1132 2N3053 2N4037 2N696 BC107
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 500 1.5 150 15 500 1.5 150 1000 0.35 150 at Continued Min f T at Pto,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

bc327b

Abstract: bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

ZTX453

Abstract: BFS98 BC338C ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AM PLIFIERS, DRIVERS and OUTPUT STA G ES, OSCILLATORS, AND GENERAL PURPOSE

MMBR2857LT1

Abstract: bcy59z 2N2222A zetex MICROSEMI 2N2222A MPSA96 BCY55 2N2907 PHILIPS SEMICONDUCTOR 2N2369 philips BC327BP BAV99 ON Semi
Contextual Info: 145 Adams Avenue Hauppauge, NY 11788 Phone 631 435-1110 Fax (631) 435-1824 www.centralsemi.com/eol EOL –LIFE SUPPORT List as of: March 30, 2001 Central Semiconductor Corp. will continue to manufacture the discrete semiconductors included on this list as long as there is an industry demand. For an update of this list please contact your sales

BC337B

Abstract: BFS98 ZTX338 ZTX452 MPSA06 ZTX451 ZTX454 ZTX551 ZTX552 ZTX553
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Sw itching, etc.

BC337B

Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
Contextual Info: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A

BCY56

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

BSY55

Abstract: m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

2N3819 MOTOROLA

Abstract: mmbr2857lt1 bcy59z BCY55 MBS4993 2N2222a PHILIPS SEMICONDUCTOR MOTOROLA 1N4751A 2N2222A zetex 2C4209WP MMBR2857
Contextual Info: EOL Life Support Program Revised: 3 May 2007 EOL Life Support Program Listing as of 05/03/07 EOL ITEM# MANUFACTURER NAME A12FR10 A12FR100 A12FR120 A12FR20 A12FR40 A12FR60 A12FR80 A12F10 A12F100 A12F120 A12F20 A12F40 A12F60 A12F80 A16FR10 A16FR100 A16FR120

BC337b

Abstract: BC327B 1005 NPN ZTX550 ZTX751 2N1613 2N1893 BFY50 MPSA06 ZT91
Contextual Info: SEMICONDUCTOR DICE NPN M EDIU M POWER Volts Volts nA ^CES 100 40 40 40 100 40 50 100 50 30 40 100 60 50 100 100 40 100 160 250 100 60 100 300 200 120 120 300 150 - 300 150 - 120 300 200 - 300 300 - 250 400 630 300 - 300 VcE sat •c < at Volts Min. Max. 120 100 100 100

Contextual Info: SbE V m T T 7 GS 7 Ô 0 Q0 7 D S 0 T23 H Z E T B T - '¿ / l- O i SEM ICO N D U CTOR DICE NPN MEDIUM POWER V CBO V CEO hFE at •CBO Min. Min. Max. at V CB Dice type Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711