ZTX453 Search Results

ZTX453

Abstract: ZTX 15 Ferranti Semiconductors ZT Ferranti ZTX452 ferranti NPN Silicon Planar Medium Power Transistors ZTX 452 ZTX 453
Contextual Info: FERRANTI i semiconductors ZTX452 ZTX453 NPN Si licon Planar M e d i u m P o w e r Transistors FEATURES • High power dissipation: 1W at Tamb = 25‘C. • hFE specified up to 1 amp. • High V CEO up to 100 volts. GENERAL DESCRIPTION These are plastic encapsulated, general purpose transis­

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - SEPT 93_ FEATURES * 100 V olt VCE0 * 1 Am p continuous current * Ptot= 1 Watt REFER TO ZTX453 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSU E 1 - SEPT 93_ FEATURES * 100 Volt VCE0 * 1 Amp continuous current * P,0,= 1Watt REFER TO ZTX453 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Collector-Base Voltage

ZTX453

Abstract: 80 Amp current 100 volt diode ZTX452
Contextual Info: ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain % VCE(sat) - (Volts) 0.8 0.6 IC/IB=10 0.4 0.2 0.01 0.1 10

Contextual Info: Not Recommended for New Design Please Use ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT453 ISSUE 1 – SEPT 93 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX453 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

ZTX453

Contextual Info: ZTX452 Not Recommended for New Design Please Use ZTX453 ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain %

2SC1018

Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252

L200 Ic

Abstract: ZTX453 ZTX452 Ic L200 DSA003766
Contextual Info: ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2- MARCH 1994 ——, FEATURES * 100 volt r- VCEO , 1 Amp * Pt[,t = 1 Watt continuous current c ABSOLUTE MAXIMUM f E RATINGS a :g~5’=!F’;!: Continuous Collector Current Power Dmsipation

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX452 ZTX453 I S S U E 2 - M A R C H 1994 FEATU RES * 100 Volt V CE0 * 1 A m p c o n tin u o u s current * Ptot = 1 Watt E-Line T 0 9 2 Com patible ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage

Ztx653

Contextual Info: Not Recommended for New Design Please Use ZTX449 / ZTX453 / ZTX653 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

BC337B

Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
Contextual Info: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A

FXT453

Abstract: ZTX453 100mhz npn transistor power amp DSA0037535
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT453 ISSUE 1 – SEPT 93 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX453 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: SbE V m T T 7 GS 7 Ô 0 Q0 7 D S 0 T23 H Z E T B T - '¿ / l- O i SEM ICO N D U CTOR DICE NPN MEDIUM POWER V CBO V CEO hFE at •CBO Min. Min. Max. at V CB Dice type Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -MARCH 1994 FEATURES * 100 Volt VCE0 * 1 Amp continuous current * P,„,= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX452 ZTX453 UNIT v CBO 100 120 V VCEO 80 100 V Collector-Base Voltage Collector-Em itter Voltage

ZXT753

Contextual Info: DISCONTINUED PLEASE USE ZXT753 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT453 ISSUE 1 – SEPT 93 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX453 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

ZTX751

Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

BC338C

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

BC337b

Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

BC557P

Abstract: BFS60 ZTX304 MPS3645 MPS6566 ZTX551 BC182P BC546P BCY65EP BFS96
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

ZTX3904

Abstract: BFS98 MPS3645 ZTX237
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

BFS98

Abstract: MPS3645 2N3906 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include: