2SC140 Search Results

TF 745-A

Abstract: 2SA745 2SA744 2SC1402 2SA745A 1403A TF 745
Contextual Info: JMnic Product Specification 2SA744/745/745A Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC1402/1403/1403A APPLICATIONS ・For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SC1403

Contextual Info: Inchange Semiconductor Product Specification 2SC1403 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC1403

Contextual Info: SavantIC Semiconductor Product Specification 2SC1403 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

TF 745-A

Abstract: 2SA745 2SC1402 2SA744 1403A TF 745 2sa745a RL4A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA744/745/745A DESCRIPTION •With TO-3 package ·Complement to type 2SC1402/1403/1403A APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SC1403A

Abstract: 2SA745A 2SC1403
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA745A DESCRIPTION •High Power Dissipation: PC= 70W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1403A APPLICATIONS ·Designed for general purpose applications.

2SC1402

Contextual Info: SavantIC Semiconductor Product Specification 2SC1402 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC1403

Abstract: 2SA745 2sc1403 transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA745 DESCRIPTION •High Power Dissipation: PC= 70W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min.) ·Complement to Type 2SC1403 APPLICATIONS ·Designed for general purpose applications.

2SC1018

Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252

2SC1417

Abstract: 2SC1438 2SC1451 2SC1429 2N6256 2SC1494 2SC1497 2SA773 2SC1425 2SC1452
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 200W 2SC1401 400 5 30A 175 25 5 15A 20* (Tc=25ºC) 70W 2SC1402 140 6 8A

2SC1402

Abstract: 2SA744 2SA745 TI 745A 2SA745A
Contextual Info: AOK AOK Semiconductor Product Specification 2SA744/745/745A S ilicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2SC1402/1403/1403A APPLICATIONS • For power switching and general purpose applications PINNING see Fig.2

2SC1406

Abstract: 2SC1407 2SA751 2SC1384 2sa 750 2SC1406 P 2SA752 2SC1383 2sc14
Contextual Info: 2 S C 1406 , 2 S C 1407 2SC1406, 2SC1407 NPN X If ^ - > 7 ^ 7 ° U - ± S 1 |/ S i NPN Epitaxial Planar 2SA751, 2SA752 £ n > ~f Power Amplifier and Driver >J /C om plem entary pair *J with 2SA751, 2SA752 if# ^ /F e a tu r e s ;*Î&frlfLE VcECsat ^ V 'o /L o w VcECsat)

2SC1400

Abstract: transistor 2sc1400 2SC1400 nec TRANSISTOR-2SC1400 fe8g
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1400 D ESCR IPTIO N The 2SC1400 is designed for use in A F low noise amplifier of a high-class STEREO SET. PACKAGE D IM EN SIO N S in m illim e te rs inches FEA TU R ES • High Voltage 80 V 5.2 MAX. • High hpE and excellent h FE linearity.

2SC1402

Contextual Info: Inchange Semiconductor Product Specification 2SC1402 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC1403

Abstract: 05-5S 2SA745 2sc1403 transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA745 DESCRIPTION •High Power Dissipation: PC= 70W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min.) ·Complement to Type 2SC1403 APPLICATIONS ·Designed for general purpose applications.

2SA684

Abstract: 2SA683 2SC1406 2SC1407 2SA751 2SC1384 2SC1407 Q 2SA752 2SC1383 2SA684 R
Contextual Info: 2SA683, 2SA684, 2SA751, 2SA752 2SA683, 2SA684, 2SA751, 2SA752 PNP PNP Epitaxial Planar ffifc Power Amplifier and Driver 2SC1383, 2SC1384, 2SC1406, 2SC1407 i a > 7“U ^ ^ 'J / Complementary pair with 2SC1383,2SC1384,2SC1406,2SC1407 S t/F eatures • 9 9 y

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

Contextual Info: r _/£7i£ j ^ztni-L.onau.cto'i L/^ioaucti, Una, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA744 DESCRIPTION • High Power Dissipation: PO 70W(Max.)@Tc=25°C

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS