ZTX452 Search Results

ZTX453

Abstract: ZTX 15 Ferranti Semiconductors ZT Ferranti ZTX452 ferranti NPN Silicon Planar Medium Power Transistors ZTX 452 ZTX 453
Contextual Info: FERRANTI i semiconductors ZTX452 ZTX453 NPN Si licon Planar M e d i u m P o w e r Transistors FEATURES • High power dissipation: 1W at Tamb = 25‘C. • hFE specified up to 1 amp. • High V CEO up to 100 volts. GENERAL DESCRIPTION These are plastic encapsulated, general purpose transis­

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

ZTX453

Abstract: 80 Amp current 100 volt diode ZTX452
Contextual Info: ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain % VCE(sat) - (Volts) 0.8 0.6 IC/IB=10 0.4 0.2 0.01 0.1 10

ZTX453

Contextual Info: ZTX452 Not Recommended for New Design Please Use ZTX453 ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain %

2SC1018

Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252

ZTX552

Abstract: ZTX452 ferranti E-Line package Scans-00107857
Contextual Info: 4 semiconductors FERRANTI ZTX552 PNP Sil icon Planar M e d iu m P o w e r Transistors FEATURES • High power dissipation: 1W at Tamb » 25*C. • hFE specified up to 1 amp. • High V CE0 up to 80 volts. • Complementary to ZTX452. GENERAL DESCRIPTION

L200 Ic

Abstract: ZTX453 ZTX452 Ic L200 DSA003766
Contextual Info: ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2- MARCH 1994 ——, FEATURES * 100 volt r- VCEO , 1 Amp * Pt[,t = 1 Watt continuous current c ABSOLUTE MAXIMUM f E RATINGS a :g~5’=!F’;!: Continuous Collector Current Power Dmsipation

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX452 ZTX453 I S S U E 2 - M A R C H 1994 FEATU RES * 100 Volt V CE0 * 1 A m p c o n tin u o u s current * Ptot = 1 Watt E-Line T 0 9 2 Com patible ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage

BC337B

Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
Contextual Info: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A

Contextual Info: SbE V m T T 7 GS 7 Ô 0 Q0 7 D S 0 T23 H Z E T B T - '¿ / l- O i SEM ICO N D U CTOR DICE NPN MEDIUM POWER V CBO V CEO hFE at •CBO Min. Min. Max. at V CB Dice type Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711

T092

Abstract: ZTX452 ZTX453
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX452 ZTX453 ISSUE 2 -M ARCH 199»_ FE A T U R E S * 100 Volt V CE0 * 1 A m p continuous current * Ptot= 1 W a t t E-Line T 0 9 2 Com patible - - ABSOLUTE M A XIM U M RATINGS.

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -MARCH 1994 FEATURES * 100 Volt VCE0 * 1 Amp continuous current * P,„,= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX452 ZTX453 UNIT v CBO 100 120 V VCEO 80 100 V Collector-Base Voltage Collector-Em itter Voltage

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

ZTX751

Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

BC337b

Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

BC557P

Abstract: BFS60 ZTX304 MPS3645 MPS6566 ZTX551 BC182P BC546P BCY65EP BFS96
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

ZTX3904

Abstract: BFS98 MPS3645 ZTX237
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

BFS98

Abstract: MPS3645 2N3906 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

ZTX107

Abstract: ZTX108 ZTX452 BC546P BC556P BFS61 BFS98 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, AND GENERAL PURPOSE

transistor ZTX302

Abstract: ZTX502 transistor ztx304 BFS98 ZTX109 ZTX452 transistor MPSA06 transistor ZTX108 BC546P BC556P
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and O UTPUT ST A G ES, O SC ILLA TO RS, AND GENERAL PURPO SE

f2n3906

Abstract: ZTX304 BC557P ZTX107 ZTX452 ZTX550 BC182P BC546P BCY65EP BFS61
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - N P N S IL IC O N P L A N A R G E N E R A L PURPO SE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

mn2510

Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
Contextual Info: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @

ZTX301

Abstract: BC557P BFS60 BFS98 ZTX108 BC546P BC556P BFS61 MPSA06 MPSA56
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE